公开(公告)号：US2767464A

公开(公告)日：1956-10-23

申请号：US31669552

申请日：1952-10-24

申请人： OHIO COMMW ENG CO

发明人： NACK HERMAN R ,  WHITACRE JOHN R

IPC分类号： C23C16/02 ,  C23C16/16

CPC分类号： C23C16/16 ,  C23C16/0209 ,  C23C16/0281 ,  Y10S428/938 ,  Y10T428/12854 ,  Y10T428/12937

公开(公告)号：US2690980A

公开(公告)日：1954-10-05

申请号：US21552251

申请日：1951-03-14

申请人： BELL TELEPHONE LABOR INC

发明人： LANDER JAMES J

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/32 ,  C23C16/44

CPC分类号： C23C16/045 ,  C23C16/16 ,  C23C16/32 ,  C23C16/4402

公开(公告)号：US20230096191A1

公开(公告)日：2023-03-30

申请号：US17947545

申请日：2022-09-19

申请人： Tokyo Electron Limited

发明人： Takeshi ITATANI ,  Einosuke TSUDA ,  Tadahiro ISHIZAKA ,  Satoshi TAKEDA

IPC分类号： H01L21/285 ,  C23C16/16 ,  C23C16/54

摘要： A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

公开(公告)号：US11084837B2

公开(公告)日：2021-08-10

申请号：US16478417

申请日：2018-03-05

申请人： TANAKA KIKINZOKU KOGYO K.K.

发明人： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Kazuharu Suzuki

IPC分类号： C07F15/00 ,  C23C16/16

摘要： The present invention relates to a chemical deposition raw material for manufacturing an iridium thin film or an iridium compound thin film by a chemical deposition method, including an iridium complex in which cyclopropenyl or a derivative thereof and a carbonyl ligand are coordinated to iridium. The iridium complex that is applied in the present invention enables an iridium thin film to be manufactured even when a reducing gas such as hydrogen is applied. in which R1 to R3, which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.

公开(公告)号：US11062908B2

公开(公告)日：2021-07-13

申请号：US16596617

申请日：2019-10-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  C23C16/16

摘要： A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US11015241B2

公开(公告)日：2021-05-25

申请号：US16307608

申请日：2017-06-06

申请人： WAYNE STATE UNIVERSITY

发明人： Charles H. Winter ,  Marissa Marie Kerrigan

IPC分类号： C23C16/16 ,  C23C16/18 ,  C23C16/455 ,  C07F15/04 ,  C07F15/06

摘要： A method of forming a thin film on a substrate which includes a step of reacting a precursor compound with a Lewis base. The precursor compound has a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided.

公开(公告)号：US20210082708A1

公开(公告)日：2021-03-18

申请号：US16952985

申请日：2020-11-19

申请人： ENTEGRIS, INC.

发明人： Sangbum HAN ,  Seobong CHANG ,  Bryan C. HENDRIX ,  Jae Eon PARK ,  Thomas H. BAUM

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/16 ,  C07F15/06 ,  C23C16/18

摘要： The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US10763116B2

公开(公告)日：2020-09-01

申请号：US15797869

申请日：2017-10-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC分类号： H01L21/285 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L23/532 ,  C23C16/16 ,  H01L29/417

摘要： A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10714388B2

公开(公告)日：2020-07-14

申请号：US16222630

申请日：2018-12-17

申请人： APPLIED MATERIALS, INC.

发明人： Jin Hee Park ,  Tae Hong Ha ,  Sang-Hyeob Lee ,  Thomas Jongwan Kwon ,  Jaesoo Ahn ,  Xianmin Tang ,  Er-Xuan Ping ,  Sree Kesapragada

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C16/48 ,  C23C16/455 ,  C23C16/04 ,  C23C16/16 ,  C23C16/18 ,  C23C16/56 ,  H01L21/67 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

摘要： Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20200211853A1

公开(公告)日：2020-07-02

申请号：US16638430

申请日：2018-08-10

申请人： Lam Research Corporation

发明人： Lawrence Schloss ,  Raashina Humayun ,  Sanjay Gopinath ,  Juwen Gao ,  Michal Danek ,  Kaihan Abidi Ashtiani

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/14 ,  C23C16/16 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

摘要： Disclosed are methods of depositing a transition metal such as tungsten on a semiconductor substrate. The method includes providing a gas mixture of diborane with a balance of hydrogen, where the hydrogen serves to stabilize the diborane in the gas mixture. The method further includes delivering the gas mixture to the semiconductor substrate to form a boron layer, where the boron layer serves as a reducing agent layer to convert a metal-containing precursor to metal, such as a tungsten-containing precursor to tungsten. In some implementations, the semiconductor substrate includes a vertical structure, such as a three-dimensional vertical NAND structure, with horizontal features or wordlines having openings in sidewalls of the vertical structure, where the boron layer may be conformally deposited in the horizontal features of the vertical structure.