公开(公告)号：US4514275A

公开(公告)日：1985-04-30

申请号：US594444

申请日：1984-03-30

申请人： Hisashi Shimada ,  Tohru Arai ,  Junji Endo

发明人： Hisashi Shimada ,  Tohru Arai ,  Junji Endo

IPC分类号： C23C14/38 ,  C23C14/00 ,  C23C14/04 ,  C23C14/24 ,  C23C14/30 ,  C23C14/32 ,  C23C14/34 ,  C23C14/56 ,  C23F4/02 ,  C23C15/00

CPC分类号： C23C14/56 ,  C23C14/04

摘要： An apparatus for physical vapor deposition comprising a vacuum casing one end of which is open; a sealing member provided at the opening of the casing; an electrode for physical vapor deposition, such as a target electrode or an electrode for heating evaporation, which is provided in the casing; and an exhaust hole for exhausting gases in the casing, which is provided at a predetermined wall portion of the casing. The apparatus may also be provided with a gas introducing hole and a bias electrode. The casing is integrally fitted to a body to be treated at the opening end portion thereof by means of the sealing member to form a vacuum chamber therein. This apparatus is compact and enables the surface treatment of a large or immovable body without moving the body.

摘要翻译： 一种用于物理气相沉积的装置，包括其一端敞开的真空壳体; 设置在所述壳体的开口处的密封构件; 用于物理气相沉积的电极，例如设置在壳体中的目标电极或用于加热蒸发的电极; 以及用于排出壳体中的气体的排气孔，其设置在壳体的预定壁部。 该装置还可以设置有气体导入孔和偏置电极。 壳体通过密封构件在其开口端部整体地装配到待处理的主体上，以在其中形成真空室。 该装置紧凑，能够在不移动身体的情况下对大的或不可移动的身体进行表面处理。

公开(公告)号：US4139409A

公开(公告)日：1979-02-13

申请号：US876367

申请日：1978-02-09

申请人： John A. Macken ,  Paul N. Palanos

发明人： John A. Macken ,  Paul N. Palanos

IPC分类号： B23K26/06 ,  B44C1/22 ,  B44C3/00 ,  B44C5/04 ,  C23F4/02 ,  C23F1/02

CPC分类号： B23K26/0661 ,  B44C1/227 ,  B44C1/228 ,  B44C3/005 ,  B44C5/0415 ,  B44C5/043 ,  C23F1/02 ,  B23K2201/007

摘要： Means and method for forming a raised metallic relief wherein a metal foil affixed to a support film is selectively etched, affixed to a wood surface, and then exposed to a scanning concentrated laser beam to vaporize the support film and wood in areas unprotected by the metal sheet. The metal design is left on the wood surface in the form of a raised relief.

摘要翻译： 用于形成凸起金属浮雕的方法和方法，其中选择性地蚀刻固定到支撑膜上的金属箔，固定到木材表面上，然后暴露于扫描浓缩的激光束，以将不受金属保护的区域中的支撑膜和木材蒸发 片。 金属设计留在木材表面上，呈浮雕形式。

公开(公告)号：US3364087A

公开(公告)日：1968-01-16

申请号：US36286764

申请日：1964-04-27

申请人： VARIAN ASSOCIATES

发明人： RAYMOND SOLOMON ,  MUELLER JR LOUIS F

IPC分类号： B23K26/12 ,  C23C8/06 ,  C23C14/28 ,  C23C16/48 ,  C23F4/02 ,  C30B31/18 ,  H01L21/00

CPC分类号： B23K26/123 ,  B23K26/12 ,  B23K26/127 ,  C23C8/06 ,  C23C14/28 ,  C23C16/481 ,  C23F4/02 ,  C30B31/185 ,  H01L21/00 ,  Y10S148/071 ,  Y10S148/093 ,  Y10S430/165

公开(公告)号：US20230290646A1

公开(公告)日：2023-09-14

申请号：US18198743

申请日：2023-05-17

申请人： Applied Materials, Inc.

发明人： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC分类号： H01L21/3213 ,  G03F7/26 ,  C23F4/02 ,  G03F7/004 ,  G03F7/36

CPC分类号： H01L21/32135 ,  G03F7/265 ,  C23F4/02 ,  G03F7/0043 ,  G03F7/36 ,  G03F7/0042

摘要： Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US20220344172A1

公开(公告)日：2022-10-27

申请号：US17240149

申请日：2021-04-26

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3213 ,  H01L21/306 ,  H01L21/02 ,  C23F4/02

摘要： Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

公开(公告)号：US20220119961A1

公开(公告)日：2022-04-21

申请号：US17646274

申请日：2021-12-28

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190249312A1

公开(公告)日：2019-08-15

申请号：US16390385

申请日：2019-04-22

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  H01L21/3213 ,  C23F1/12 ,  C09K13/00 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3065 ,  C09K13/08 ,  H01J37/32

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190242019A1

公开(公告)日：2019-08-08

申请号：US16390540

申请日：2019-04-22

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  C09K13/00 ,  H01L21/3065 ,  C23F1/12

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20180163312A1

公开(公告)日：2018-06-14

申请号：US15835262

申请日：2017-12-07

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  C09K13/00

CPC分类号： C23F4/02 ,  C09K13/00 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32135

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US09909218B2

公开(公告)日：2018-03-06

申请号：US12686068

申请日：2010-01-12

申请人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

发明人： Tristan Bret ,  Patrik Hoffmann ,  Michel Rossi ,  Xavier Multone

IPC分类号： H01L21/302 ,  C23F4/00 ,  C23F4/02 ,  G03F1/72 ,  G03F1/74

CPC分类号： C23F4/00 ,  C23F4/02 ,  G03F1/72 ,  G03F1/74 ,  H01J2237/31744

摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.