摘要:
A height difference under a sealant is reduced in a case where lines are present under the sealant.There is provided a substrate having an active matrix display circuit and peripheral driving circuits, a counter substrate having a counter electrode provided on the substrate in a face-to-face relationship therewith, a sealant provided between the substrate and the counter substrate such that it surrounds the active matrix display circuit and peripheral driving circuits, a liquid crystal material provided inside the sealant, a plurality of external connection lines provided on the substrate under the sealant with a resin inter-layer film interposed therebetween for electrically connecting the active matrix display circuit- and peripheral driving circuits to circuits present outside the sealant and an adjustment layer provided in the same layer as the plurality of external connection lines.
摘要:
The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
摘要:
A method is provided for distribution and assignment of calls to an agent that has confirmed its current availability status. In one embodiment an agent is selected by the system and prompted for its current availability. If the agent is available, the call is routed to the agent. If the agent is not available the system selects another agent and the process is repeated. Then, a call is assigned to an available agent based on current availability information.
摘要:
In an active matrix panel, a pixel matrix which includes a plurality of gate lines, a plurality of source lines, and thin film transistors is formed on a first transparent substrate. A second transparent substrate is formed opposite to the first transparent substrate. A liquid crystal material is disposed between the first and second transparent substrates. A gate line driver circuit and a source line driver circuit are formed by a P-type, an N-type, a complementary type thin film transistors (including silicon film) or the like on the first transparent substrate. Also, a data processing circuit for performing mask processing or the like is formed by the thin film transistors or the like on the first transparent substrate.
摘要:
New intracorporeal photodynamic medicaments and certain medical uses and methods for use of such photodynamic medicaments for treatment of disease in human or animal tissue are described, wherein a primary active component of such medicaments is a halogenated xanthene or halogenated xanthene derivative. In preferred embodiments, such medicaments are used for treatment of a variety of conditions affecting the skin and related organs, the mouth and digestive tract and related organs, the urinary and reproductive tracts and related organs, the respiratory tract and related organs, the circulatory system and related organs, the head and neck, the endocrine and lymphoreticular systems and related organs, various other tissues, such as connective tissues and various tissue surfaces exposed during surgery, as well as various tissues exhibiting microbial or parasitic infection. In another preferred embodiment, such medicaments are produced in various formulations including liquid, semisolid, solid or aerosol delivery vehicles.
摘要:
Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4 and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
摘要:
It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
摘要:
A substantially M-shaped rail clip is substantially flat when in its non-operative configuration, and, when the clip is in an operative configuration, the toe of the clip lies substantially in a second plane and the legs of the clip lie substantially in a third plane, the second and third planes being non-parallel to one another.
摘要:
According to a driving method of applying a reverse bias voltage, capacitance occurs due to a stacked structure of a conductor, an insulator and a conductor, or due to a structure of a TFT. This capacitance prevents normal operation. The invention provides a pixel configuration including at least a driving transistor for driving a light emitting element and a switching transistor for controlling the driving transistor, wherein the switching transistor is turned on in the case of applying a forward bias voltage after applying a reverse bias voltage. As a result, it is prevented that the potential changes due to unwanted capacitive coupling.