摘要:
Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.
摘要:
A backlight assembly includes a light source, a light-guide plate, a reflective sheet, a first prism sheet, a second prism sheet and a lateral reflective sheet. The light source generates light. The light-guide plate guides the light and has a plurality of first prism patterns adjacent to each other. The first prism patterns are formed on a first surface of the light-guide plate. The reflective sheet is disposed adjacent the first surface of the light-guide plate. The first and second prism sheets are disposed on a second surface of the light-guide plate. The lateral reflective sheet is disposed on the second prism sheet. The lateral reflective sheet includes reflective protrusions substantially parallel with a longitudinal direction of the light source. Therefore, brightness and display quality may be enhanced.
摘要:
In a semiconductor memory device and method, phase-change memory cells are provided, each including a plurality of control transistors formed on different layers and variable resistance devices formed of a phase-change material. Each phase-change memory cell includes a plurality of control transistors formed on different layers, and a variable resistance device formed of a phase-change material. In one example, the number of the control transistors is two. The semiconductor memory device includes a global bit line; a plurality of local bit lines connected to or disconnected from the global bit line via local bit line selection circuits which correspond to the local bit lines, respectively; and a plurality of phase-change memory cell groups storing data while being connected to the local bit lines, respectively. Each of the phase-change memory cells of each of the phase-change memory cell groups comprises a plurality of control transistors formed on different layers, and a variable resistance device formed of a phase-change material. In addition, the semiconductor memory device has a hierarchical bit line structure that uses a global bit line and local bit lines. Accordingly, it is possible to increase both the integration density of the semiconductor memory device and the amount of current flowing through each of the phase-change memory cells.
摘要:
A method and system for allocating channels in a wireless network is provided. The wireless network includes a plurality of electronic devices organized into clusters. The plurality of electronic devices communicates with each other through a plurality of channels. The method performed by an electronic device includes scanning the plurality of channels for a frame generated in a first cluster and determining that the frame is a beacon frame transmitted by a first cluster header in the first cluster. Further, the method includes sending a channel request to the first cluster header and receiving a channel request response from the first cluster header. Moreover, the method includes designating the electronic device as a second cluster header for a second cluster.
摘要:
A dielectric sheet having two layers made of different materials for forming a differential dielectric sheet on a plasma display panel, a plasma display panel using the same, and a manufacturing method therefor.
摘要:
A method for managing scanning of a plurality of channels in a wireless network is disclosed. The method comprises detecting by a station that a first channel in a plurality of channels is being used for a communication by another station, determining a duration of the communication based upon the communication information, setting a Network Allocation Vector for the station based on the determined duration, scanning a number of channels during the determined duration, and returning to the first channel upon at least one of a) completion of the step of scanning and b) an end of the determined duration.
摘要:
A phase-changeable memory device may include a substrate including a peripheral region and a cell region, a first pad on the peripheral region, a second pad on the cell region, a lower electrode on the second pad, an insulation layer pattern on the substrate, the insulation layer pattern including a first opening exposing the lower electrode and a second opening exposing the first pad, a phase-changeable layer pattern including a phase-changeable material and being in the first opening, a metal plug in the second opening, the metal plug having an upper surface higher than that of an upper surface of the phase-changeable layer pattern, an upper electrode formed on the phase-changeable layer pattern, and a conductive wiring formed on the metal plug.
摘要:
A preamble for an OFDM signal synchronizes (104) and estimates (106) the sub-channels with only one code. One polyphase code sequence is used repeatedly for the preamble. The preamble is spread out over the bandwidth, which is the same as an OFDM symbol in the frequency domain and has good autocorrelation characteristics in the time domain. All OFDM signals are added with this preamble at the beginning of the OFDM signal and transmitted on the channel at a transmitter (50). At the receiving end, the receiver (100) first does the autocorrelation process to find out a peak value for synchronization in the time domain. Then, since the polyphase code is known at the receiver, the signal to noise ratio for each sub-carrier is calculated in the frequency domain and smoothed using the normal (Gaussian) distribution to provide the channel estimation. Since the synchronization and channel estimation are processed with a single preamble, the overhead for these two functions is significantly reduced.
摘要:
A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.
摘要:
An optical member according to one or more embodiments includes an optical plate and an optical film. In an embodiment, the optical plate includes an incident part receiving light provided from the exterior and an emitting part emitting the light. The optical film is attached to the incident part and includes a first conductive layer, a second conductive layer facing the first conductive layer and polarized particles disposed between the first conductive layer and the second conductive layer. Thus, light sources of a backlight assembly may be individually driven regardless of the type of light source and the disposition of the light sources, and image display quality may be improved by improving a contrast ratio by realizing various gradation voltages.