公开(公告)号：US06235447B1

公开(公告)日：2001-05-22

申请号：US09418724

申请日：1999-10-15

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C08F32/08 ,  C07C62/34 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

Abstract translation: 本发明涉及可用于形成光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物的新单体，其适用于采用远紫外光源的光刻法，其共聚物。 本发明优选的单体由下面的化学式1表示：其中，X 1和X 2分别表示CH 2，CH 2 CH 2，氧或硫; Y表示CH2或氧; R 1表示H或CH 3，R'和R“分别表示取代或未取代的（C 0 -C 3）烷基; i表示0〜3的整数。

公开(公告)号：US06225020B1

公开(公告)日：2001-05-01

申请号：US09301944

申请日：1999-04-29

Applicant: Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/38 ,  C08F222/40 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.

Abstract translation: 本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R1是C1-C10直链或支链取代的烷基或苄基; R2是C1-C10伯，仲或叔醇基; m和n独立地表示1至3的数; 并且X，Y和Z是共聚单体的各自的聚合比。根据本发明的光致抗蚀剂聚合物适用于形成超微图案，例如在使用光源的4G或16G DRAM半导体器件中使用的超微图案 例如ArF，电子束，EUV或离子束。

公开(公告)号：US20240255848A1

公开(公告)日：2024-08-01

申请号：US18449156

申请日：2023-08-14

Applicant: Geun Su Lee ,  Samsung Electronics Co., Ltd.

Inventor： Chawon KOH ,  Yeon Hee SEONG ,  Tsunehiro NISHI ,  Geun Su LEE ,  Sung Jae JUNG ,  Moo Hyun KOH ,  Ji Young PARK ,  Seungyeol BAEK

IPC: G03F7/004 ,  C07F7/22 ,  C07F9/6596 ,  G03F7/075 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0045 ,  C07F7/2224 ,  C07F9/6596 ,  G03F7/0757 ,  G03F7/168 ,  G03F7/38 ,  H01L21/0274

Abstract: The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.

公开(公告)号：US09892964B1

公开(公告)日：2018-02-13

申请号：US15470387

申请日：2017-03-27

Applicant: SK hynix Inc. ,  Geun Su Lee

Inventor： Ji Won Moon ,  Jin Wook Jang ,  Sang Youl Yi ,  Sung Jae Lee ,  Geun Su Lee ,  Young Sun Lee ,  Min Su Kim

IPC: H01L23/58 ,  H01L21/768 ,  H01L21/28 ,  H01L21/311 ,  H01L21/04 ,  C08G77/18 ,  C08G77/20 ,  C08G77/00

CPC classification number: H01L21/76861 ,  C08G77/18 ,  C08G77/20 ,  C08G77/80 ,  H01L21/048 ,  H01L21/28 ,  H01L21/311

Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

公开(公告)号：US07449538B2

公开(公告)日：2008-11-11

申请号：US11421897

申请日：2006-06-02

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: C08G77/04

CPC classification number: G03F7/0752 ,  G03F7/11

Abstract: Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

Abstract translation: 本文公开了包含硅化合物和羟基化合物的交联聚合物。 本文还公开了包含交联聚合物和有机溶剂的组合物。 该组合物可用作在制造半导体器件期间施加在下层上的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。

公开(公告)号：US07399570B2

公开(公告)日：2008-07-15

申请号：US10999416

申请日：2005-03-31

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/00 ,  G03F7/004 ,  G08F118/02

CPC classification number: G03F7/0382 ,  C08F8/44

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

Abstract translation: 使用包含水的光致抗蚀剂组合物，具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案，使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环境友好的，并且在193nm和248nm处具有低吸光度，其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

公开(公告)号：US07338742B2

公开(公告)日：2008-03-04

申请号：US10876029

申请日：2004-06-24

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/039 ,  G03F7/32

CPC classification number: G03F7/0046 ,  C07D327/04 ,  G03F7/0397

Abstract: The present invention relates to photoresist polymers and photoresist compositions. The disclosed photoresist polymers and photoresist compositions containing the same have excellent transmittance, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to a developing solution at a wavelength of 193 nm and 157 nm, thereby improving LER (line edge roughness).

Abstract translation: 本发明涉及光致抗蚀剂聚合物和光致抗蚀剂组合物。 所公开的光致抗蚀剂聚合物和含有该光致抗蚀剂组合物的光致抗蚀剂组合物在193nm和157nm的波长下对显影液具有优异的透光率，耐蚀刻性，耐热性和粘合性，低吸光度和高亲和性，从而提高了LER（线边缘粗糙度 ）。

公开(公告)号：US07329477B2

公开(公告)日：2008-02-12

申请号：US10993869

申请日：2004-11-19

Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/0045

Abstract: The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Abstract translation: 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

公开(公告)号：US07270934B2

公开(公告)日：2007-09-18

申请号：US10999412

申请日：2004-11-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/0382

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a photoacid generator, and a negative photoresist polymer. The polymer includes a basic-type repeating unit represented by Formula (I) (shown below), so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, since the main solvent of the composition is water, the disclosed photoresist composition is eco-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured. wherein R1, R2, R3, R4, R5, R6, R7, b, c, d and m are defined in the specification.

Abstract translation: 使用光致抗蚀剂组合物形成光致抗蚀剂图案，该组合物包括水，光致酸产生剂和负性光致抗蚀剂聚合物。 聚合物包括由式（I）表示的碱式重复单元（如下所示），从而可以不使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环保的，并且在193nm和248nm具有低吸光度，其可用于在远紫外区域中使用光源的光刻工艺 制造半导体器件的高集成精密电路。 其中R 1，R 2，R 3，R 4，R 5， R 6，R 7，b，c，d和m在说明书中定义。

公开(公告)号：US06998442B2

公开(公告)日：2006-02-14

申请号：US10702977

申请日：2003-11-06

Applicant: Min-Ho Jung ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Soo Shin

Inventor： Min-Ho Jung ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Soo Shin

IPC: C08L33/14

CPC classification number: G03F7/091 ,  C08F212/14 ,  C08F220/28

Abstract: An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.