公开(公告)号：US20080113462A1

公开(公告)日：2008-05-15

申请号：US11882259

申请日：2007-07-31

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/02

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20080054296A1

公开(公告)日：2008-03-06

申请号：US11808368

申请日：2007-06-08

申请人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

发明人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

IPC分类号： H01L33/00 ,  H01L21/04

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

摘要翻译： 提供了一种具有提高的效率和功率特性的氮化物基半导体发光器件及其制造方法。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成钝化层，在钝化层上形成金属氮化物的多个掩蔽点，在钝化层上横向外延生长氮化物基半导体层，使用 掩模点作为掩模，在氮化物基半导体层上形成半导体器件，以及湿蚀刻牺牲层，以从半导体器件分离和/或去除衬底。

公开(公告)号：US20060289883A1

公开(公告)日：2006-12-28

申请号：US11453866

申请日：2006-06-16

申请人： Hyun-soo Kim ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Jeong-wook Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/382

摘要： The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

摘要翻译： 具有突起和凹陷结构的半导体发光器件包括：设置在基板上的下覆盖层; 形成在所述下包层的顶表面的一部分上的有源层; 形成在有源层上的上覆层; 形成在所述上包层上的第一电极; 以及第二电极，其形成在形成在未被有源层占据的下包层的顶表面的一部分上的突起和凹陷结构图案区域上。

公开(公告)号：US20060118803A1

公开(公告)日：2006-06-08

申请号：US11294403

申请日：2005-12-06

申请人： Jeong-wook Lee ,  Youn-joon Sung

发明人： Jeong-wook Lee ,  Youn-joon Sung

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

公开(公告)号：US20060118798A1

公开(公告)日：2006-06-08

申请号：US11289292

申请日：2005-11-30

申请人： Jeong-wook Lee

发明人： Jeong-wook Lee

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.

摘要翻译： 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：基板，位于基板上的至少两个发光单元，其通过层叠半导体材料层，反射层和依次层叠在发光单元之间的透明绝缘层形成，并且覆盖上部的透明电极 发光单元的表面。

公开(公告)号：US08895331B2

公开(公告)日：2014-11-25

申请号：US12627714

申请日：2009-11-30

申请人： Jeong-wook Lee ,  Youn-joon Sung

发明人： Jeong-wook Lee ,  Youn-joon Sung

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/12

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

公开(公告)号：US08638037B2

公开(公告)日：2014-01-28

申请号：US13092468

申请日：2011-04-22

申请人： Kyung-mi Moon ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

发明人： Kyung-mi Moon ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

IPC分类号： H05B37/00 ,  H05B39/00 ,  H05B41/00

CPC分类号： H01L25/075 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

摘要： Lead frames for light emitting device packages, light emitting device packages, and illumination apparatuses employing the light emitting device packages. The lead frame including a plurality of mounting portions on which a plurality of light emitting device chips are mounted; a plurality of connection portions for circuit connecting the plurality of light emitting device chips; a terminal portion extended from the plurality of connection portions. The light emitting device package is formed by directly mounting the plurality of light emitting device chips on the lead frame and packaging the mounted light emitting device chips on the lead frame. The lead frame includes a plurality of connection portions for circuit connecting the plurality of light emitting device chips and a terminal portion in which a part of a circuit thereof is exposed.

摘要翻译： 用于发光器件封装的引线框架，发光器件封装以及采用发光器件封装的照明设备。 所述引线框架包括多个安装部分，所述多个安装部分安装有多个发光器件芯片; 用于电路连接多个发光器件芯片的多个连接部分; 从所述多个连接部分延伸的端子部分。 发光器件封装通过将多个发光器件芯片直接安装在引线框架上并将安装的发光器件芯片封装在引线框架上而形成。 引线框架包括用于电路连接多个发光器件芯片的多个连接部分和其一部分电路暴露的端子部分。

公开(公告)号：US08607584B2

公开(公告)日：2013-12-17

申请号：US12805918

申请日：2010-08-24

申请人： Joo Hee Song ,  Jeong Wook Lee ,  Ha Jin Jeong

发明人： Joo Hee Song ,  Jeong Wook Lee ,  Ha Jin Jeong

IPC分类号： F25D25/00

CPC分类号： F25D23/04 ,  F25D11/006 ,  F25D23/025 ,  F25D2303/085 ,  F25D2323/023 ,  F25D2400/06

摘要： A refrigerator having a sub door which reduces energy loss and a method of manufacturing method the sub door. The refrigerator includes a main body provided with storage chambers formed therein, doors opening and closing the storage chambers, and provided with an opening, a sub door to open and close the opening, and a cooling unit provided on the rear surface of the sub door. When the sub door is opened, cool air of the cooling unit is transmitted to a stored article put on the rear surface of the sub door, and when the sub door is closed, relatively uniform temperature distribution in the storage chamber is achieved and thus storage performance of the refrigerator is improved.

摘要翻译： 具有减小能量损失的副门的冰箱和制造子门的方法。 冰箱包括设置有形成在其中的存储室的主体，打开和关闭存储室的门，并设置有开口，用于打开和关闭开口的副门，以及设置在副门的后表面上的冷却单元 。 当子门打开时，冷却单元的冷却空气被传送到放置在副门的后表面上的储存物品，当子门关闭时，存储室中的温度分布相对均匀，从而存储 提高了冰箱的性能。

公开(公告)号：US08378381B2

公开(公告)日：2013-02-19

申请号：US12890361

申请日：2010-09-24

申请人： Tan Sakong ,  Cheol Soo Sone ,  Ho Sun Paek ,  Suk Ho Yoon ,  Jeong Wook Lee

发明人： Tan Sakong ,  Cheol Soo Sone ,  Ho Sun Paek ,  Suk Ho Yoon ,  Jeong Wook Lee

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/34

摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0

摘要翻译： 提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

公开(公告)号：US20120118827A1

公开(公告)日：2012-05-17

申请号：US13294040

申请日：2011-11-10

申请人： Ho Nam CHANG ,  Jin-dal-rae CHOI ,  Sang Yup LEE ,  Jeong Wook LEE ,  Sunwon PARK ,  Woohyun KIM ,  Tae-woo KIM ,  Kwonsu JUNG ,  Gwon-woo PARK ,  Wanji KONG ,  Sung Gap IM

发明人： Ho Nam CHANG ,  Jin-dal-rae CHOI ,  Sang Yup LEE ,  Jeong Wook LEE ,  Sunwon PARK ,  Woohyun KIM ,  Tae-woo KIM ,  Kwonsu JUNG ,  Gwon-woo PARK ,  Wanji KONG ,  Sung Gap IM

IPC分类号： B01D61/00

CPC分类号： B01D61/002 ,  B01D2315/14 ,  C12M47/10

摘要： The present invention relates to a method for concentrating law titer fermentation broth, and more particularly to a method for concentrating a fermentation broth using forward osmosis. The method comprises: introducing the fermentation broth and an osmolyte into a feed chamber and a draw chamber, respectively, which are included in a concentration system and are divided from each other by a forward osmosis membrane, and subjecting the introduced fermentation broth to forward osmosis, thereby concentrating the fermentation broth in the feed chamber. The method can maximize the concentration of the low titer fermentation broth while minimizing energy consumption and operating cost, and thus can contribute to the industrialization of new technology.

摘要翻译： 本发明涉及一种浓缩法律滴定发酵液的方法，更具体地涉及使用正向渗透浓缩发酵液的方法。 该方法包括：将发酵液和渗透剂分别引入到包含在浓缩体系中的进料室和萃取室中，并通过正向渗透膜彼此分离，并使引入的发酵液向前渗透 从而将发酵液浓缩在进料室中。 该方法可以最大限度地降低低滴度发酵液的浓度，同时最大限度地降低能耗和运行成本，从而有助于新技术的产业化。