利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

95 条记录 (耗时 0.027 秒)

    Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device
    62.
    发明授权
    Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device 有权
    非易失性存储器件，非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统

    公开(公告)号：US08203881B2

    公开(公告)日：2012-06-19

    申请号：US12656714

    申请日：2010-02-16

    申请人： Nam-Hoon Kim ,  Jun-Ho Jang

    发明人： Nam-Hoon Kim ,  Jun-Ho Jang

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/26

    摘要： The method of operating the nonvolatile memory device may include performing a read operation on a first address region, comparing a read time of the first address region with a reference time, and storing read data from the read from the first address region in a second address region based on the comparison result.

    摘要翻译： 操作非易失性存储器件的方法可以包括对第一地址区域执行读取操作，将第一地址区域的读取时间与参考时间进行比较，以及将来自第一地址区域的读取数据存储在第二地址 区域基于比较结果。

    Light emitting device having vertical structrue and method for manufacturing the same
    63.
    发明授权
    Light emitting device having vertical structrue and method for manufacturing the same 有权
    具有垂直结构的发光器件及其制造方法

    公开(公告)号：US08203162B2

    公开(公告)日：2012-06-19

    申请号：US12656612

    申请日：2010-02-04

    申请人： Jun Ho Jang ,  Hyun Jae Lee

    发明人： Jun Ho Jang ,  Hyun Jae Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2224/24

    摘要： A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

    摘要翻译： 公开了具有垂直结构的发光器件及其制造方法，其能够抑制在衬底分离过程中产生的冲击并实现批量生产率的提高。 发光器件包括具有多层结构的半导体层，布置在半导体层的一个表面的第一电极，布置在第一电极上的金属支撑体和布置在第一电极和金属支撑体之间的冲击阻尼层，以及 由具有高于用于金属支撑件的金属的延展性的延展性的金属制成。

    Method of fabricating systems including heat-sensitive memory devices
    64.
    发明授权
    Method of fabricating systems including heat-sensitive memory devices 有权
    制造包括热敏记忆装置的系统的方法

    公开(公告)号：US08166234B2

    公开(公告)日：2012-04-24

    申请号：US12631267

    申请日：2009-12-04

    申请人： Jun-Ho Jang ,  Woonjae Chung ,  Hungjun An

    发明人： Jun-Ho Jang ,  Woonjae Chung ,  Hungjun An

    IPC分类号： G06F13/00

    CPC分类号： G06F9/4401 ,  H01L27/115

    摘要： A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.

    摘要翻译： 系统码存储在第一非易失性存储器中。 在包括第一非易失性存储器和第二非易失性存储器的电子设备的组装期间，第一非易失性存储器和第二非易失性存储器被加热。 加热到足以改变第二非易失性存储器件中的至少一些存储单元的状态的温度。 在加热之后，存储在第一非易失性存储器中的系统代码被复制到第二非易失性存储器中。 与第二非易失性存储器相比，第一非易失性存储器可能不太容易受到与温度有关的数据改变的影响。 例如，第一非易失性存储器可以包括NAND闪存，并且第二非易失性存储器可以包括可变电阻存储器。

    ELECTRONIC DEVICE COMPRISING FLASH MEMORY AND RELATED METHOD OF HANDLING PROGRAM FAILURES
    66.
    发明申请
    ELECTRONIC DEVICE COMPRISING FLASH MEMORY AND RELATED METHOD OF HANDLING PROGRAM FAILURES 审中-公开
    包含闪存的电子设备和处理程序故障的相关方法

    公开(公告)号：US20110271041A1

    公开(公告)日：2011-11-03

    申请号：US13074224

    申请日：2011-03-29

    申请人： Mi-Hyang LEE ,  Jun-Ho JANG ,  Seung-Jin JUNG

    发明人： Mi-Hyang LEE ,  Jun-Ho JANG ,  Seung-Jin JUNG

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0868 ,  G06F12/0246 ,  G06F2212/214

    摘要： A storage device performs a program operation to store program data in a selected memory block of a flash memory. The storage device allocates a reserved area of the flash memory as a free block upon detecting that a program failure has occurred in the program operation, reads the program data from a cache latch in a page buffer of the flash memory, copies valid data stored in the selected memory block to a first area of the free block, and reprograms the program data read from the cache latch to a second area of the free block.

    摘要翻译： 存储装置执行程序操作以将程序数据存储在所选择的闪速存储器的存储块中。 存储设备在检测到程序操作中发生程序故障时，将闪存的保留区域分配为空闲块，从闪速存储器的页面缓冲器中的高速缓存锁存器中读取程序数据，将存储在 所选择的存储器块到自由块的第一区域，并且将从高速缓冲存储器锁存器读取的程序数据重新编程到自由块的第二区域。

    SYSTEMS AND METHODS OF TRANSFERRING DATA BETWEEN A DISK DEVICE AND AN EXTERNAL STORAGE DEVICE
    67.
    发明申请
    SYSTEMS AND METHODS OF TRANSFERRING DATA BETWEEN A DISK DEVICE AND AN EXTERNAL STORAGE DEVICE 有权
    传输设备和外部存储设备之间的数据的系统和方法

    公开(公告)号：US20110191501A1

    公开(公告)日：2011-08-04

    申请号：US13019424

    申请日：2011-02-02

    申请人： Jun-ho JANG ,  Keung-youn Cho

    发明人： Jun-ho JANG ,  Keung-youn Cho

    IPC分类号： G06F3/00

    CPC分类号： G06F3/00

    摘要： Provided are systems and methods to communicate data transfer of data between a disk device and an external storage device. A host can generate a control command to communicate with an external storage device, and a disk device to receive the control command from a host to identify and communicate with an external storage device when connected to the external storage device and to configure the external storage device by assigning an ID code to each storage area of the external storage device.

    摘要翻译： 提供了在盘设备和外部存储设备之间传送数据的数据传输的系统和方法。 主机可以生成与外部存储设备进行通信的控制命令，以及磁盘设备，用于从主机接收控制命令，以在连接到外部存储设备时识别和与外部存储设备通信并配置外部存储设备 通过向外部存储装置的每个存储区域分配ID代码。

    Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device
    69.
    发明申请
    Nonvolatile memory device, method of operating nonvolatile memory device and memory system including nonvolatile memory device 有权
    非易失性存储器件，非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统

    公开(公告)号：US20100208521A1

    公开(公告)日：2010-08-19

    申请号：US12656714

    申请日：2010-02-16

    申请人： Nam-Hoon Kim ,  Jun-Ho Jang

    发明人： Nam-Hoon Kim ,  Jun-Ho Jang

    IPC分类号： G11C16/06 ,  G11C16/04

    CPC分类号： G11C16/26

    摘要： The method of operating the nonvolatile memory device may include performing a read operation on a first address region, comparing a read time of the first address region with a reference time, and storing read data from the read from the first address region in a second address region based on the comparison result.

    摘要翻译： 操作非易失性存储器件的方法可以包括对第一地址区域执行读取操作，将第一地址区域的读取时间与参考时间进行比较，以及将来自第一地址区域的读取数据存储在第二地址 区域基于比较结果。

    METHOD OF FABRICATING SYSTEMS INCLUDING HEAT-SENSITIVE MEMORY DEVICES
    70.
    发明申请
    METHOD OF FABRICATING SYSTEMS INCLUDING HEAT-SENSITIVE MEMORY DEVICES 有权
    包含热敏记忆体装置的制造方法

    公开(公告)号：US20100153628A1

    公开(公告)日：2010-06-17

    申请号：US12631267

    申请日：2009-12-04

    申请人： Jun-Ho Jang ,  Woonjae Chung ,  Hungjun An

    发明人： Jun-Ho Jang ,  Woonjae Chung ,  Hungjun An

    IPC分类号： G06F12/02 ,  G11C11/00 ,  G11C7/00 ,  G11C16/06 ,  G11C7/10

    CPC分类号： G06F9/4401 ,  H01L27/115

    摘要： A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.

    摘要翻译： 系统代码存储在第一非易失性存储器中。 在包括第一非易失性存储器和第二非易失性存储器的电子设备的组装期间，第一非易失性存储器和第二非易失性存储器被加热。 加热到足以改变第二非易失性存储器件中的至少一些存储单元的状态的温度。 在加热之后，存储在第一非易失性存储器中的系统代码被复制到第二非易失性存储器中。 与第二非易失性存储器相比，第一非易失性存储器可能不太容易受到与温度有关的数据改变的影响。 例如，第一非易失性存储器可以包括NAND闪存，并且第二非易失性存储器可以包括可变电阻存储器。