公开(公告)号：US06693050B1

公开(公告)日：2004-02-17

申请号：US10431031

申请日：2003-05-06

Applicant: Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao

Inventor： Zhenjiang Cui ,  Rick J. Roberts ,  Michael S. Cox ,  Jun Zhao

IPC: H01L2131

CPC classification number: H01L21/76229

Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

Abstract translation: 一种填充蚀刻在衬底中的多个沟槽的方法。 在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 将旋涂玻璃材料层暴露于溶剂中; 固化旋涂玻璃材料层; 并使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

公开(公告)号：US06635114B2

公开(公告)日：2003-10-21

申请号：US09467296

申请日：1999-12-17

Applicant: Jun Zhao ,  Charles Dornfest ,  Frank Chang ,  Xiaoliang Jin ,  Po Tang

Inventor： Jun Zhao ,  Charles Dornfest ,  Frank Chang ,  Xiaoliang Jin ,  Po Tang

IPC: C23C1600

CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/4486

Abstract: The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces “flash” sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150° C. to about 300° C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces.

Abstract translation: 本发明通常提供一种用于沉积需要蒸发的材料，特别是低挥发性前体的沉积室，其作为液体被输送到蒸发器，以通过一个或多个汽化元件转化为气相，并且必须在升高的温度下运输至 防止腔室部件发生不必要的冷凝。 在一个方面，腔室包括一系列加热的受温度控制的内衬，作为蒸发表面，其被构造用于快速去除，清洁和/或更换，并且优选地由具有接近沉积材料的热膨胀系数的材料制成 。 蒸发表面在蒸发表面的表面上“闪蒸”喷射的液体前体，然后在进一步进入系统之前净化闪光的前体。 特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。 优选地，室的内表面是可调节的并且可在高于环境温度（例如约150℃至约300℃）的合适温度下保持，以防止气化材料在室和相关气流表面上的分解和/或冷凝 。

公开(公告)号：US06534360B2

公开(公告)日：2003-03-18

申请号：US09826711

申请日：2001-04-04

Applicant: Pravin Narwankar ,  Jun Zhao

Inventor： Pravin Narwankar ,  Jun Zhao

IPC: H01L218242

CPC classification number: H01L21/02183 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/7687 ,  H01L28/40 ,  H01L28/60

Abstract: Processes which use the same precursor material for forming a metal electrode deposition as for forming a dielectric layer deposition. The layers may be successively formed in the same chamber, or may be formed in like chambers located in a processing system.

公开(公告)号：US06527865B1

公开(公告)日：2003-03-04

申请号：US09595767

申请日：2000-06-16

Applicant: Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

Inventor： Talex Sajoto ,  Charles Dornfest ,  Leonid Selyutin ,  Jun Zhao ,  Vincent Ku ,  Xiao Liang Jin

IPC: C23C16000

CPC classification number: C23C16/4557 ,  C23C16/4401 ,  C23C16/4402 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67017 ,  H01L21/6715

Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

Abstract translation: 本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。 一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。 另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝 在腔室部件上。 该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。

公开(公告)号：US06464795B1

公开(公告)日：2002-10-15

申请号：US09563573

申请日：2000-05-03

Applicant: Semyon Sherstinsky ,  Calvin Augason ,  Leonel A. Zuniga ,  Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Joseph Yudovsky ,  Maitreyee Mahajani ,  Steve G. Ghanayem ,  Tai T. Ngo ,  Arnold Kholodenko

Inventor： Semyon Sherstinsky ,  Calvin Augason ,  Leonel A. Zuniga ,  Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Joseph Yudovsky ,  Maitreyee Mahajani ,  Steve G. Ghanayem ,  Tai T. Ngo ,  Arnold Kholodenko

IPC: G23C1600

CPC classification number: C23C16/45521 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68785

Abstract: A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Abstract translation: 一种用于在处理室中支撑衬底的支撑构件，所述支撑构件具有具有一个或多个隔离的凹陷区域的衬底支撑表面。 真空通道和气体通道沿着公共平面形成在支撑构件中，并且分别耦合到真空源和气体源。 气体通道包括包围真空通道的两个或更多个同心设置的环形气体通道。 真空通道由多个管道联接到支撑表面，特别是连接到一个或多个凹陷区域。 导管的一部分沿直径设置在至少一个环形气体通道的外部，并通过旁通通道与真空通道连通。

公开(公告)号：US6129044A

公开(公告)日：2000-10-10

申请号：US409477

申请日：1999-10-06

Applicant: Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

Inventor： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC: C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

CPC classification number: C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

Abstract: The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

Abstract translation: 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

公开(公告)号：US6035101A

公开(公告)日：2000-03-07

申请号：US56703

申请日：1998-03-26

Applicant: Talex Sajoto ,  Leonid Selyutin ,  Jun Zhao ,  Stefan Wolff

Inventor： Talex Sajoto ,  Leonid Selyutin ,  Jun Zhao ,  Stefan Wolff

IPC: H05B3/68 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H01L21/00 ,  H01L21/285 ,  H01L21/31 ,  C23C16/00 ,  F27B5/14 ,  F28F7/00 ,  H01L21/68

CPC classification number: C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096 ,  H01L21/67109

Abstract: The present invention provides systems, methods and apparatus for heating substrates in a processing chamber to temperatures up to at least 700.degree. C. In accordance with an embodiment of the invention a heater assembly with an inner core of high thermal conductivity is encased in a shell of lower thermal conductivity, creating a nearly isothermal interface between the core and shell. The inner core is brazed to the shell, promoting thermal transfer, and acts as a thermal short between opposing surfaces of the shell. The heater assembly is designed to minimize thermal stresses arising from the difference in the thermal expansion coefficients of the various components of the multi-layered heater assembly. In one embodiment of the invention, two independently-powered heating elements are arranged concentrically to each other to create a dual zone heater. A thermal gap in the inner core between the inner and outer heating elements de-couples the zones and provides a more controllable temperature profile at the surface of the heater, including excellent temperature uniformity. In one embodiment, an RF isolator is placed between a heater and a support shaft, allowing the heater to be powered as an electrode in a plasma process.

Abstract translation: 本发明提供了用于将处理室中的衬底加热至至少700℃的温度的系统，方法和设备。根据本发明的实施例，具有高导热性的内芯的加热器组件被包封在壳体 具有较低的导热性，从而在芯和壳之间产生接近等温的界面。 内芯被钎焊到壳体上，促进热传递，并且作为壳体的相对表面之间的热短路。 加热器组件被设计成最小化由多层加热器组件的各种部件的热膨胀系数的差异引起的热应力。 在本发明的一个实施例中，两个独立供电的加热元件彼此同心地布置以产生双区加热器。 内部加热元件和外部加热元件之间的内部芯片的热间隙使这些区域脱耦并在加热器表面提供更可控的温度分布，包括优异的温度均匀性。 在一个实施例中，RF隔离器被放置在加热器和支撑轴之间，允许加热器在等离子体工艺中作为电极供电。

公开(公告)号：US5994678A

公开(公告)日：1999-11-30

申请号：US798004

申请日：1997-02-12

Applicant: Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

Inventor： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B3/06 ,  C23C16/00

CPC classification number: C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract translation: 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5968379A

公开(公告)日：1999-10-19

申请号：US800096

申请日：1997-02-12

Applicant: Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

Inventor： Jun Zhao ,  Charles Dornfest ,  Talex Sajoto ,  Leonid Selyutin ,  Stefan Wolff ,  Lee Luo ,  Harold Mortensen ,  Richard Palicka

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52 ,  H01L21/00 ,  H01L21/687 ,  B23K10/00

CPC classification number: C23C16/4586 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/68785 ,  H01L21/68792

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract translation: 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US5951776A

公开(公告)日：1999-09-14

申请号：US738240

申请日：1996-10-25

Applicant: Leonid Selyutin ,  Jun Zhao

Inventor： Leonid Selyutin ,  Jun Zhao

IPC: C23C16/458 ,  H01L21/68 ,  H01L21/687 ,  C23C16/00 ,  B65G29/00 ,  B65G47/00 ,  B66B9/02

CPC classification number: H01L21/68742 ,  C23C16/4583 ,  H01L21/68 ,  H01L21/68792

Abstract: A particular configuration of a compact self-aligning lift mechanism is provided for lifting the stem of a pedestal in a processing chamber while minimizing process anomalies due to geometric misalignment and binding of moving pieces. The force associated with supporting a stem in a processing chamber is routed through a first arm through a base portion of a carrier bracket where it engages a linear bearing such that the truck and track of the linear bearing absorb all forces riot aligned with the bearing. A second arm extending from the base portion, for example through a set of slots adjacent to the bearing track support member, is attached to a lift mechanism which can oppose the force from the pedestal stem such that the displacements of the first and second arms are predictable based on the force on that arm. A compliant nut is used so that the drive screw can be somewhat misaligned with the linear bearing track without causing binding, misalignment, or non-repeatability of substrate positioning during processing.

Abstract translation: 提供了一种紧凑的自对准提升机构的特定构造，用于在处理室中提升基座的杆，同时最小化由于几何未对准和移动件的结合所造成的过程异常。 与处理室中支撑杆相关联的力通过第一臂穿过承载架的基部，其中它与直线轴承接合，使得直线轴承的卡车和轨道吸收与轴承对准的所有力。 从基部延伸的第二臂，例如通过邻近轴承轨道支撑构件的一组槽，附接到提升机构，该提升机构可以抵抗来自基座杆的力，使得第一和第二臂的位移为 基于该手臂的力量可预测。 使用柔性螺母，使得驱动螺杆可以与线性轴承轨道稍微不对准，而不会在加工期间引起基板定位的结合，未对准或不可重复性。