摘要:
A germanium metal-semiconductor-metal (MSM) photodetector is fabricated by growing crystalline germanium from an amorphous silicon seed, supported by an amorphous substrate, at a temperature of about 450° C. In this fabrication, crystalline Ge is grown via selective deposition in geometrically confined channels, where amorphous silicon is disposed as the growth seed. Ge growth extends from the growth seed along the channels to a lithographically defined trench. The Ge emerging out of the channels includes crystalline grains that coalesce to fill the trench, forming a Ge strip that can be used as the active area of a photodetector. One or more Schottky contacts can be formed by a thin tunneling layer (e.g., Al2O3) deposited on the Ge strip and metal contracts formed on the tunneling layer.
摘要:
A method includes determining at least one first station and at least one second station have a relative timing difference. The method then determines a muting schedule for the at least one first station for a plurality of sub-frames, wherein the muting schedule includes at least two adjacent muted sub-frames. The method further includes initiating sending an indication of the muting schedule to the at least one first station and the at least one second station wherein information on one or more channels is transmitted from the at least one second station during the at least two adjacent muted sub-frames.
摘要:
A method includes determining at least one first station and at least one second station have a relative timing difference. The method then determines a muting schedule for the at least one first station for a plurality of sub-frames, wherein the muting schedule includes at least two adjacent muted sub-frames. The method further includes initiating sending an indication of the muting schedule to the at least one first station and the at least one second station wherein information on one or more channels is transmitted from the at least one second station during the at least two adjacent muted sub-frames.
摘要:
An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.
摘要:
A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.
摘要:
A method of manufacturing a photovoltaic cell includes providing an active absorption layer, forming a pseudo-periodic grating adjacent to the active absorption layer, and forming a reflector adjacent to the pseudo-periodic grating. A photovoltaic cell includes an active absorption layer, a pseudo-periodic grating adjacent to the active absorption layer, and a reflector adjacent to the pseudo-periodic grating.
摘要:
A set of permissible parameter pairs with the parameters being a number of code channels and an associated spreading factor is determined according to at least one first selection criterion. Then a parameter pair from the set of permissible parameter pairs for the CDMA transmission is selected according to at least one second selection criterion. In this selection process, the spreading factor is used as a second selection criterion with a higher value being preferred over a lower value if both spreading factors are below or equal to a threshold spreading factor value. This accounts for the fact that in a certain regime low spreading factor involve a prohibitively high processing load and lead to increase inter symbol interference.
摘要:
A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.
摘要:
The mode transforming structure includes a first waveguide structure. A slot waveguide region is coupled to the first waveguide structure. The slot waveguide region includes one or more complementary tapered pairs so near lossless transforming between the first waveguide structure and the slot waveguide region occurs so as to allow optical modes to be transferred between the first waveguide and the slot waveguide region.
摘要:
A code sequence is described by a line of a code matrix, the latter being obtained by formation of a Hadamard matrix with a length n and multiplication of lines of the Hadamard matrix by −1.