公开(公告)号：US20080144038A1

公开(公告)日：2008-06-19

申请号：US11612721

申请日：2006-12-19

申请人： Richard Alan LeBlanc ,  Martin Sensiper ,  Phuoc Khanh Nguyen

发明人： Richard Alan LeBlanc ,  Martin Sensiper ,  Phuoc Khanh Nguyen

IPC分类号： G01N21/55

CPC分类号： A61F9/008 ,  A61F9/00814 ,  A61F2009/00855 ,  A61F2009/00872

摘要： A method for assessing a performance of a laser system for use in corneal ablation is provided that includes directing a beam of laser shots onto a fluorescent indicator. The indicator is adapted to emit a first wavelength of light different from a second wavelength of light impinging thereon. The directing step is performed in a plane of a cornea of an eye desired to be ablated and also onto a cornea positioned at the corneal plane. Light reflected from the indicator is detected, and a difference between a detected light pattern from the camera and a predetermined ablation pattern desired to be made on the cornea is calculated. The predetermined pattern is then corrected to compensate for the calculated difference.

摘要翻译： 提供了一种用于评估用于角膜消融的激光系统的性能的方法，其包括将激光束射束引导到荧光指示器上。 指示器适于发射不同于入射到其上的第二波长的光的第一波长的光。 引导步骤在希望被消融的眼睛的角膜的平面中进行，并且还在位于角膜平面上的角膜上进行。 检测从指示器反射的光，并且计算来自照相机的检测光图案和期望在角膜上进行的预定消融图案之间的差异。 然后校正预定图案以补偿计算出的差。

公开(公告)号：US20080129055A1

公开(公告)日：2008-06-05

申请号：US11566536

申请日：2006-12-04

申请人： Min C. Kim ,  Khanh Nguyen ,  Mark A. Haisler

发明人： Min C. Kim ,  Khanh Nguyen ,  Mark A. Haisler

IPC分类号： E05C19/06

CPC分类号： H05K5/0221 ,  E05B17/0037 ,  E05B65/006 ,  E05C1/10 ,  Y10S292/11 ,  Y10T292/0894 ,  Y10T292/0926 ,  Y10T292/0969

摘要： An apparatus for holding a cover in a closed orientation substantially covering a chassis face of a unit; the unit containing equipment in an equipment volume; the equipment volume being partially bounded by the chassis face; includes: a positioning structure coupling the cover with the unit for selectively situating the cover in the closed orientation or in an other orientation; and a latching structure configured for latchingly engaging the chassis face and the cover for holding the cover in the closed orientation when the latching structure is in a first orientation. The latching structure does not engage the chassis face and the cover when the latching structure is in a second orientation. The latching structure is situated substantially entirely outside the equipment volume.

摘要翻译： 一种用于将盖子保持在基本上覆盖单元的底盘面的封闭取向的装置; 设备容量中包含设备的单位; 设备体积部分地由底盘面限制; 包括：定位结构，其将所述盖与所述单元联接，用于以所述封闭取向或另一方向选择性地定位所述盖; 以及闩锁结构，其构造成用于当所述闩锁结构处于第一取向时，将所述底盘面和所述盖闩锁地接合以将所述盖保持在所述封闭取向。 当闩锁结构处于第二方向时，闩锁结构不接合底盘面和盖。 闩锁结构基本上完全位于设备体积外部。

公开(公告)号：US20070099257A1

公开(公告)日：2007-05-03

申请号：US11601649

申请日：2006-11-20

申请人： Jean-Louis Reymond ,  Denis Wahler ,  Frabrizzio Badalassi ,  Hong-Khanh Nguyen

发明人： Jean-Louis Reymond ,  Denis Wahler ,  Frabrizzio Badalassi ,  Hong-Khanh Nguyen

IPC分类号： C12Q1/26

CPC分类号： C07D407/12 ,  C07D311/16 ,  C12Q1/26 ,  C12Q1/34 ,  C12Q1/37 ,  C12Q2326/00 ,  C12Q2334/00 ,  C12Q2334/20 ,  G01N2333/918

摘要： This invention has as its object a method for releasing a product by subjecting a compound of Formula (II′): R′7R′8(HX)C1-C2(YH)R′9R′10 to a chemical oxidation that cleaves the bond C1-C2 to obtain the product. In the compound of Formula (II′): R′7 to R′10, which are identical or different, correspond to a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted functional group; X and Y, which are identical or different, are an oxygen atom, a sulfur atom, or an amine of Formula —NR11R12, wherein R11 is a hydrogen atom, an alkyl group, or a substituted or unsubstituted aryl group, and R12 is not a hydrogen atom. The invention also has as its object a method for releasing a product that comprises, before the chemical oxidation stage, a first step for preparing the compound of Formula (II′). The released product can be a volatile molecule or an active substance or else a specific product. The invention also relates to a method for detecting the released product as well as its applications, in particular for detecting catalytic or enzymatic activities.

摘要翻译： 本发明的目的是通过使式（II'）的化合物：R'，R“8（HX）C（C） （YH）R'9 R 10与化学氧化反应，其切割键C 1 C 2以获得产物。 在式（II'）的化合物中：R'7至R'10相同或不同，相当于氢原子，取代或未取代的烷基 ，或取代或未取代的官能团; X和Y相同或不同，是氧原子，硫原子或式-NR 11 R 12的胺，其中R 11 R 2是氢原子，烷基或取代或未取代的芳基，R 12不是氢原子。 本发明的目的还有一种释放产品的方法，该方法包括在化学氧化阶段之前制备式（II'）化合物的第一步骤。 释放的产物可以是挥发性分子或活性物质或特定产物。 本发明还涉及用于检测释放产物及其应用的方法，特别是用于检测催化或酶活性。

公开(公告)号：US20070098996A1

公开(公告)日：2007-05-03

申请号：US11564582

申请日：2006-11-29

申请人： Matthew Frey ,  Khanh Nguyen

发明人： Matthew Frey ,  Khanh Nguyen

IPC分类号： B32B27/00 ,  B29D7/00

CPC分类号： H05K3/108 ,  B82Y30/00 ,  C23C18/1603 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1806 ,  C23C18/1834 ,  C23C18/1889 ,  C23C18/208 ,  C23C18/31 ,  C23C18/405 ,  H01L21/288 ,  H05K3/184 ,  H05K2201/0382 ,  H05K2203/0195 ,  H05K2203/072 ,  H05K2203/124 ,  Y10T428/12 ,  Y10T428/12514 ,  Y10T428/261 ,  Y10T428/31544

摘要： A method of selectively and electrolessly depositing a metal onto a substrate having a metallic microstructured surface is disclosed. The method includes forming a self-assembled monolayer on the metallic microstructured surface, exposing the self-assembled monolayer to an electroless plating solution including a soluble form of a deposit metal, and depositing electrolessly the deposit metal selectively on the metallic microstructured surface. Article formed from this method are also disclosed.

摘要翻译： 公开了一种选择性地和无电沉积金属到具有金属微结构化表面的基底上的方法。 该方法包括在金属微结构化表面上形成自组装单层，将自组装单层暴露于包括可溶形式的沉积金属的化学镀溶液中，并将沉积金属选择性地沉积在金属微结构化表面上。 还公开了由该方法形成的制品。

公开(公告)号：US20070036951A1

公开(公告)日：2007-02-15

申请号：US11200551

申请日：2005-08-10

申请人： Khanh Nguyen ,  Matthew Frey ,  Haiyan Zhang ,  Jun-Ying Zhang

发明人： Khanh Nguyen ,  Matthew Frey ,  Haiyan Zhang ,  Jun-Ying Zhang

IPC分类号： B05D3/04 ,  B05D5/12 ,  B32B3/00

CPC分类号： C23C18/208 ,  B82Y30/00 ,  C23C18/1608 ,  C23C18/31 ,  C25D1/10 ,  Y10T428/24917

摘要： A method of selectively and electrolessly depositing a metal onto a substrate having a metallic patterned-nanostructure surface is disclosed. The method includes providing a tool having a patterned-nanostructure surface, the patterned-nanostructure surface having surface regions having a nanostructured surface, replicating the tool patterned-nanostructure surface onto a substrate to form a substrate patterned-nanostructure surface, disposing a metal layer on the substrate patterned-nanostructure surface to form a metallic patterned-nanostructure surface region, forming a self-assembled monolayer on the metallic patterned-nanostructure surface region, exposing the self-assembled monolayer to an electroless plating solution comprising a deposit metal, and depositing electrolessly the deposit metal selectively on the surface regions having a metallic nanostructured surface. Articles formed from this method are also disclosed.

摘要翻译： 公开了一种选择性地和无电沉积金属到具有金属图案化纳米结构表面的基底上的方法。 该方法包括提供具有图案化纳米结构表面的工具，所述图案化纳米结构表面具有具有纳米结构化表面的表面区域，将工具图案化纳米结构表面复制到衬底上以形成衬底图案化纳米结构表面，将金属层设置在 衬底图案化纳米结构表面以形成金属图案化纳米结构表面区域，在金属图案化纳米结构表面区域上形成自组装单层，将自组装单层暴露于包含沉积金属的化学镀溶液中，并将无电沉积 选择性地在具有金属纳米结构表面的表面区域上沉积金属。 还公开了由该方法形成的制品。

公开(公告)号：US20060126746A1

公开(公告)日：2006-06-15

申请号：US11012654

申请日：2004-12-15

申请人： Khanh Nguyen

发明人： Khanh Nguyen

IPC分类号： H04L27/00

CPC分类号： H04L27/04 ,  H04L27/0008 ,  H04L27/12

摘要： An apparatus that presents an output signal that is modulated by input signal includes: (a) A signal source providing a signal at a reference frequency. (b) A frequency comparer coupled with the signal source and the output signal for comparing the extant output signal frequency with the reference frequency and generating an indicator representing the comparing. (c) Value storing units coupled with the frequency comparer to respond to an indicator and store a parameter associated with one of predetermined frequencies. (d) A selector coupled with the value storing units. (e) A signal controlled oscillator coupled with the selector. The selector responds to the input signal to couple a value storing unit with the oscillator for providing a parameter to the oscillator for effecting the modulation.

摘要翻译： 呈现由输入信号调制的输出信号的装置包括：（a）以参考频率提供信号的信号源。 （b）与信号源和输出信号耦合的频率比较器，用于将存在的输出信号频率与参考频率进行比较，并产生表示比较的指标。 （c）与频率比较器耦合以响应指示符并存储与预定频率之一相关联的参数的值存储单元。 （d）与值存储单元耦合的选择器。 （e）与选择器耦合的信号控制振荡器。 选择器响应输入信号以将值存储单元与振荡器耦合，以向振荡器提供参数以实现调制。

公开(公告)号：US6140255A

公开(公告)日：2000-10-31

申请号：US261543

申请日：1999-03-03

申请人： Minh Van Ngo ,  Terri Jo Kitson ,  Khanh Nguyen

发明人： Minh Van Ngo ,  Terri Jo Kitson ,  Khanh Nguyen

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/033 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/402 ,  C23C16/5096 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31612

摘要： A method for depositing silicon nitride on a semiconductor wafer uses plasma enhanced chemical vapor deposition at very low temperatures. The temperature in a silicon nitride deposition chamber is set to be about 170.degree. C. or less. Silane gas (SiH.sub.4) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 300 sccm (standard cubic cm per minute) to about 500 sccm. Nitrogen gas (N.sub.2) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 500 sccm to about 2000 sccm. Ammonia gas (NH.sub.3) flows into the silicon nitride deposition chamber with a flow rate in a range of from about 1.0 slm to about 2.2 slm. A high frequency RF signal is applied on a showerhead within the deposition chamber. A low frequency RF signal is applied on a heating block for holding the semiconductor wafer. A predetermined volume for the silicon nitride deposition chamber is used such that pressure within the silicon nitride deposition chamber is in a range of from about 1.0 torr to about 2.4 torr. The semiconductor wafer is placed inside the silicon nitride deposition chamber for a soak time period of about 30 seconds or greater before the high frequency RF signal is applied on the showerhead in the deposition chamber and the low frequency RF signal is applied on the heating block. When the semiconductor wafer reaches the deposition temperature, the high frequency RF signal and the low frequency RF signal are applied for deposition of the silicon nitride layer onto the semiconductor wafer. By using low temperatures during the deposition of the silicon nitride layer, the structural integrity of any structure already on the semiconductor wafer is advantageously preserved.

摘要翻译： 在半导体晶片上沉积氮化硅的方法在非常低的温度下使用等离子体增强化学气相沉积。 氮化硅沉积室中的温度设定为约170℃以下。 硅烷气体（SiH4）以约300sccm（标准立方厘米每分钟）的流速流入氮化硅沉积室至约500sccm。 氮气（N 2）以约500sccm至约2000sccm的流速流入氮化硅沉积室。 氨气（NH 3）以约1.0slm至约2.2slm的流速流入氮化硅沉积室。 高频RF信号施加在沉积室内的喷头上。 将低频RF信号施加在用于保持半导体晶片的加热块上。 使用用于氮化硅沉积室的预定体积，使得氮化硅沉积室内的压力在约1.0托至约2.4托的范围内。 将半导体晶片放置在氮化硅沉积室的内部，用于在沉积室内的喷头上施加高频RF信号之前约30秒或更长的浸泡时间，并且将低频RF信号施加到加热块上。 当半导体晶片达到沉积温度时，施加高频RF信号和低频RF信号以将氮化硅层沉积到半导体晶片上。 通过在沉积氮化硅层期间使用低温，有利地保留已经在半导体晶片上的任何结构的结构完整性。