Abstract:
In various methods of performing program operations in phase change memory devices, selected memory cells are repeatedly programmed to obtain resistance distributions having desired characteristics such as adequate sensing margins.
Abstract:
A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.
Abstract:
In one aspect, a non-volatile memory includes a phase-change memory cell array which includes a plurality of normal phase-change memory cells and a plurality of pseudo one-time-programmable (OTP) phase-change memory cells, a write driver which writes data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array, and an OTP controller which selectively disables the write driver.
Abstract:
The present invention relates to an acryl-silicon rubber complex polymer and a method for the preparation and use of the same. More precisely, the present invention relates to an acryl-silicon rubber complex polymer which has a seed-core-shell structure wherein the vinyl monomer and hydrophilic monomer are cross-linked on the seed; the acryl-silicon complex IPN core having an IPN (interpenetrating network) structure in which silicon rubber particles are dispersed by being cross-linked to acryl rubber, in a continuous phase, is formed on the seed; and a shell prepared by graft-polymerization of C1˜C4 alkyl methacrylate to the acryl-silicon complex IPN core is formed on the core, and a method of preparation and use of the same. The acryl-silicon rubber complex polymer of the present invention has excellent impact resistance, weatherability and gloss, so that it can be effectively used as an impact modifier for vinyl chloride resin. The acryl-silicon complex IPN core has an IPN (interpenetrating network) structure formed by radical polymerization of acryl monomer and hydrosilyation of silicon rubber.
Abstract:
The present invention relates to acryl-silicone hybrid impact modifiers, the method of their manufacture, and vinyl chloride resin compositions containing the above. The acryl-silicone hybrid impact modifier of the present invention is comprised of a) 0.01 to 10 parts by weight of a seed obtained through emulsion copolymerization of vinyl monomers and hydrophilic monomers; b) 60 to 94 parts by weight of an acryl-silicone hybrid rubber core covering the seed in which a polyorganosiloxane rubber phase is dispersed locally onto the inner part and surface of the acrylic rubber core containing alkyl acrylate polymers of which alkyl group has 1 to 8 carbon atoms; and c) 6 to 40 parts by weight of a shell covering the above rubber core and containing alkyl methacrylate polymers of which alkyl group has 1 to 4 carbon atoms. Thermoplastic resins containing the above, particularly by being added to vinyl chloride resins, they have effects of granting superior impact resistance, weatherability, and high gloss.
Abstract:
A package map data outputting circuit of a semiconductor memory device embedded with a test circuit and a method for the same are provided. To improve the reliability of package map data and easily output a greater amount of the package map data, the package map data is stored to package map data registers at the wafer level and then output through the test circuit at the package level.
Abstract:
Disclosed is a crosslinked polymer nanoparticle containing composition, a method for preparing a copolymer using the composition, and a vinyl chloride resin with improved foam molding properties. Processing aid in according with the present invention, provides the effects of improved foam molding properties and processibility of a vinyl chloride resin, during a foam molding process upon being added to the vinyl chloride resin.
Abstract:
A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell array; a sense amplifier configured to be supplied with the external voltage and configured to read data from the plurality of non-volatile memory cells selected from the memory cell array, and a row decoder and a column decoder configured to select the plurality of non-volatile memory cells included in the memory cell array, the row decoder being supplied with the first voltage and the column decoder being supplied with the external voltage.
Abstract:
Disclosed are a hollow fiber membrane module, a filtration apparatus based on the same, and a method for manufacturing the filtration apparatus. The hollow fiber membrane module includes two headers respectively provided with a permeate collecting unit therein, wherein each of the headers has grooves on its two sides, the grooves being extended in a length direction of the hollow fiber membrane. Since one slide rod can simultaneously be inserted into grooves of two adjacent hollow fiber membrane modules, the hollow fiber membrane modules can mutually serve as guides for insertion/ejection thereof. Also, since the grooves formed on the header can serve as insertion holes into which a clamp is inserted, the clamp can be used for coupling between the hollow fiber membrane module and another element and reinforcement of the coupling.
Abstract:
A non-volatile memory device includes a set pulse generator configured to generate a set pulse, a reset pulse generator configured to generate a reset pulse based on the set pulse, and a write driver block configured to write second data to a second non-volatile memory cell using the reset pulse, while writing first data to a first non-volatile memory cell using the set pulse.