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105 条记录 (耗时 0.015 秒)

    Engineering emission wavelengths in laser and light emitting devices
    62.
    发明授权
    Engineering emission wavelengths in laser and light emitting devices 有权
    激光和发光器件中的工程发射波长

    公开(公告)号：US08242480B2

    公开(公告)日：2012-08-14

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L29/12

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Confined Lateral Growth of Crystalline Material
    63.
    发明申请
    Confined Lateral Growth of Crystalline Material 审中-公开
    结晶材料的限制横向生长

    公开(公告)号：US20120025195A1

    公开(公告)日：2012-02-02

    申请号：US13191682

    申请日：2011-07-27

    申请人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L29/161 ,  C30B19/00 ,  H01L21/203 ,  C30B23/04 ,  H01L21/208 ,  B05C11/00 ,  C30B25/04

    CPC分类号： C30B25/18 ,  C23C16/04 ,  C23C16/06 ,  C30B23/04 ,  C30B25/04 ,  C30B29/08 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/1281 ,  H01L29/66742 ,  H01L29/78684

    摘要： In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.

    摘要翻译： 在结晶材料生长的结构中，提供了较低的生长限制层和上部生长约束层，其设置在下部生长限制层的上方并与之垂直分离。 在上部和下部生长限制层之间提供横向生长通道，其特征在于由上部和下部生长限制层之间的垂直分隔限定的高度。 将生长种子设置在横向生长通道中的位置以引发通道中的结晶材料生长。 包括生长通道出口用于从生长通道提供形成的结晶材料。 利用这种生长限制结构，可以将结晶物质从生长种子生长到侧生长通道出口。

    CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES
    64.
    发明申请
    CAVITY-ENHANCED MULTISPECTRAL PHOTONIC DEVICES 有权
    增强型多通道光电器件

    公开(公告)号：US20110127547A1

    公开(公告)日：2011-06-02

    申请号：US12815820

    申请日：2010-06-15

    申请人： Jianfei Wang ,  Juejun Hu ,  Anuradha M. Agarwal ,  Xiaochen Sun ,  Lionel C. Kimerling

    发明人： Jianfei Wang ,  Juejun Hu ,  Anuradha M. Agarwal ,  Xiaochen Sun ,  Lionel C. Kimerling

    IPC分类号： H01L31/12 ,  H01L31/18

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01J3/2823

    摘要： A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements.

    摘要翻译： 提供了一种多光谱像素结构，其包括用于发射或检测多个指定波长的多个堆叠的空腔结构，其中每个堆叠的空腔布置具有用于光谱发射或检测指定波长之一的光活性层。 光敏层定位在谐振腔堆叠内，​​并且谐振腔堆叠位于两个相邻的反射镜叠层之间。 多个耦合匹配层位于一个或多个堆叠反射镜装置之间，用于控制每个堆叠空腔布置中发射或入射光与谐振模式之间的光学相位和耦合强度。

    Three dimensional high index optical waveguides bends and splitters
    69.
    发明授权
    Three dimensional high index optical waveguides bends and splitters 有权
    三维高折射率光波导弯曲和分离器

    公开(公告)号：US07352934B2

    公开(公告)日：2008-04-01

    申请号：US09996462

    申请日：2001-11-28

    申请人： Desmond R. Lim ,  Christina Manolatou ,  Paul Maki ,  Kevin K. Lee ,  Kazumi Wada ,  Hermann A. Haus ,  Lionel C. Kimerling

    发明人： Desmond R. Lim ,  Christina Manolatou ,  Paul Maki ,  Kevin K. Lee ,  Kazumi Wada ,  Hermann A. Haus ,  Lionel C. Kimerling

    IPC分类号： G02B6/26

    CPC分类号： G02B6/122 ,  G02B6/125 ,  G02B2006/12061 ,  G02B2006/12109 ,  G02B2006/12119 ,  G02B2006/12164

    摘要： An optical cavity structure for bending optical signals is provided. The optical cavity structure includes an input port for receiving input optical signals from a first waveguide. The optical cavity structure also includes an interconnecting structure that receives said input optical signals and interconnects said first waveguide to a second waveguide, the interconnecting structure further includes at least four straight edges that orthogonal and of a finite width. The optical cavity structure further includes an output port coupled to the interconnecting structure for providing the second waveguide with the input optical signals. Further, the optical cavity structure may be used to create three dimensional splitter devices and resonators.

    摘要翻译： 提供了用于弯曲光信号的光腔结构。 光腔结构包括用于从第一波导接收输入光信号的输入端口。 光腔结构还包括互连结构，其接收所述输入光信号并将所述第一波导互连到第二波导，所述互连结构还包括正交和有限宽度的至少四个直边。 光腔结构还包括耦合到互连结构的输出端口，用于向第二波导提供输入光信号。 此外，光腔结构可用于产生三维分离器装置和谐振器。

    Grating into a high index contrast strip or channel waveguide
    70.
    发明授权
    Grating into a high index contrast strip or channel waveguide 失效
    光栅成高折射率对比条或通道波导

    公开(公告)号：US07346238B2

    公开(公告)日：2008-03-18

    申请号：US10196041

    申请日：2002-07-16

    申请人： Lionel C. Kimerling ,  Desmond R. Lim

    发明人： Lionel C. Kimerling ,  Desmond R. Lim

    IPC分类号： G02B6/34

    CPC分类号： G02B6/124

    摘要： A high index difference coupler includes a high index difference waveguide having one or more modes. A plurality of gratings is formed on the high index difference waveguide. The effective index difference between low index regions and high index regions of the waveguide is greater than 0.3.

    摘要翻译： 高折射率差耦合器包括具有一个或多个模式的高折射率差分波导。 在高折射率差分波导上形成多个光栅。 波导的低折射率区域和高折射率区域之间的有效折射率差大于0.3。