公开(公告)号：US20150357513A1

公开(公告)日：2015-12-10

申请号：US14827709

申请日：2015-08-17

Applicant: SORAA, INC.

Inventor： MICHAEL J. CICH ,  KENNETH JOHN THOMSON

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

公开(公告)号：USD741508S1

公开(公告)日：2015-10-20

申请号：US29495625

申请日：2014-07-02

Applicant: SORAA, INC.

Designer： Artem Mishin

公开(公告)号：USD739570S1

公开(公告)日：2015-09-22

申请号：US29475766

申请日：2013-12-06

Applicant: SORAA, INC.

Designer： Frank Shum ,  Ronald Randall van Thiel

公开(公告)号：USD736723S1

公开(公告)日：2015-08-18

申请号：US29454826

申请日：2013-05-14

Applicant: SORAA, INC.

Designer： Frank Shum ,  Clifford Jue ,  Artem Mishin ,  Zinovy Dolgonosov ,  George Xie ,  Michael Ragan Krames ,  Jinhui Zhai

公开(公告)号：US20150167909A1

公开(公告)日：2015-06-18

申请号：US14628562

申请日：2015-02-23

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  Michael Ragan Krames

IPC: F21K99/00

CPC classification number: F21K9/64 ,  F21Y2105/12 ,  F21Y2105/16 ,  F21Y2113/13 ,  F21Y2115/10

Abstract: Light emitting devices and techniques for using remote blue phosphors in LED lamps are disclosed. An LED lamp is formed by configuring a first plurality of n of radiation sources to emit radiation characterized by a first wavelength, the first wavelength being substantially violet, and configuring a second plurality of m of radiation sources to emit radiation characterized by a second wavelength, the second wavelength also being substantially violet. Aesthetically-pleasing white light is emitted as the light from the radiation sources interacts with various wavelength converting materials (e.g., deposits of red-emitting materials, deposits of yellow/green-emitting materials, etc.) including a blue-emitting remote wavelength converting layer configured to absorb at least a portion of the radiation emitted by the first plurality of radiation sources. The remote wavelength converting layer emits wavelengths ranging from about 420 nm to about 520 nm.

Abstract translation: 公开了在LED灯中使用远程蓝色荧光体的发光器件和技术。 通过配置第一多个n个辐射源以发射以第一波长为特征的辐射，第一波长基本上为紫，并且配置第二多个m个辐射源以发射以第二波长为特征的辐射，形成LED灯， 第二波长也基本上是紫色的。 随着来自辐射源的光与各种波长转换材料（例如，红色发光材料的沉积物，黄色/绿色发光材料的沉积物等）相互作用，发出美学令人愉快的白光，包括发射蓝光的远程波长转换 层，被配置为吸收由第一多个辐射源发射的辐射的至少一部分。 远程波长转换层发射约420nm至约520nm的波长。

公开(公告)号：US20150137683A1

公开(公告)日：2015-05-21

申请号：US14569308

申请日：2014-12-12

Applicant: SORAA, INC.

Inventor： Michael Ragan Krames ,  WILFRED A. MARTIS ,  FRANK SHUM ,  RONALD RANDALL VAN THIEL

IPC: F21V29/70 ,  H05B33/08

CPC classification number: H05B33/0845 ,  F21K9/23 ,  F21S2/00 ,  F21S8/038 ,  F21V23/006 ,  F21V23/008 ,  F21V23/045 ,  F21V29/74 ,  F21Y2115/10 ,  H05B33/0854

Abstract: LED lighting systems including mated components such that the LED light source component is separated from the LED controller by a distance and/or by a temperature differential are disclosed.

Abstract translation: 公开了包括配对部件的LED照明系统，使得LED光源部件与LED控制器分离一定距离和/或通过温度差。

公开(公告)号：US20150132926A1

公开(公告)日：2015-05-14

申请号：US14599335

申请日：2015-01-16

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  DERRICK S. KAMBER ,  BRADLEY C. DOWNEY

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Abstract translation: 使用m-平面或楔形晶种进行大规模制造氮化镓颗粒可以使用氨热生长方法进行。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并将水晶进行氨水生长。 选择m平面或楔形晶种的取向以提供有效利用种子板和高压釜或高压装置内的体积。

公开(公告)号：USD728490S1

公开(公告)日：2015-05-05

申请号：US29469709

申请日：2013-10-14

Applicant: Soraa, Inc.

Designer： Frank Shum ,  Clifford Jue

公开(公告)号：US09000466B1

公开(公告)日：2015-04-07

申请号：US13781633

申请日：2013-02-28

Applicant: Soraa, Inc.

Inventor： Rafael Aldaz ,  Aurelien David ,  Daniel F. Feezell ,  Thomas M. Katona ,  Rajat Sharma

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。

公开(公告)号：US08994033B2

公开(公告)日：2015-03-31

申请号：US13937338

申请日：2013-07-09

Applicant: Soraa, Inc.

Inventor： Michael J. Cich ,  Kenneth John Thomson

IPC: H01L29/15 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0008 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

Abstract translation: 一种制造LED器件的方法。 该方法包括提供包括背面和前侧表面的含镓和氮的衬底构件（例如，GaN）。 该方法包括使背面表面进行抛光处理，使得背面由表面粗糙度表征，使背面表面进行各向异性蚀刻处理，使各种晶面曝光，形成多个在空间上分布的金字塔状结构 非周期性地在后侧表面上处理包括多个金字塔状结构的背面，到等离子体物质，并对背面进行表面处理。 该方法还包括形成包含覆盖在经表面处理的背面的铝轴承种类或钛轴承种类的接触材料以形成具有接触材料的多个LED器件。