Avalanche photo diode and method of manufacturing the same
    63.
    发明授权
    Avalanche photo diode and method of manufacturing the same 有权
    雪崩光电二极管及其制造方法

    公开(公告)号:US08710547B2

    公开(公告)日:2014-04-29

    申请号:US13605135

    申请日:2012-09-06

    CPC classification number: H01L31/107

    Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

    Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板,形成在基板上的光吸收层,形成在光吸收层上的包覆层,形成在包层中的有源区,形成在有源区周围的保护环区,绝缘 形成在保护环区域和有源区域之间的区域。

    ELECTRONIC APPARATUS AND METHOD FOR CONTROLLING THEREOF

    公开(公告)号:US20130174099A1

    公开(公告)日:2013-07-04

    申请号:US13593952

    申请日:2012-08-24

    CPC classification number: G06F3/04817 G06F3/017

    Abstract: An electronic apparatus and a method for controlling thereof are provided. The method for controlling the electronic apparatus includes displaying an icon and a pointer to perform a motion task mode when a motion start command is input, moving the pointer in accordance with a first user motion, and executing a function corresponding to the icon when a second user motion is input while the pointer is placed on the icon. Accordingly, the user controls the electronic apparatus using the user motion more conveniently and intuitively.

    AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME
    66.
    发明申请
    AVALANCHE PHOTO DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    AVALANCHE照相二极管及其制造方法

    公开(公告)号:US20130153962A1

    公开(公告)日:2013-06-20

    申请号:US13605135

    申请日:2012-09-06

    CPC classification number: H01L31/107

    Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

    Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板,形成在基板上的光吸收层,形成在光吸收层上的包覆层,形成在包层中的有源区,形成在有源区周围的保护环区,绝缘 形成在保护环区域和有源区域之间的区域。

    Method of providing user interface which implements screen conversion by channel change in three-dimensional effect, and apparatus thereof
    68.
    发明授权
    Method of providing user interface which implements screen conversion by channel change in three-dimensional effect, and apparatus thereof 有权
    提供通过三维效果中的信道改变实现屏幕转换的用户界面的方法及其装置

    公开(公告)号:US08243197B2

    公开(公告)日:2012-08-14

    申请号:US11655246

    申请日:2007-01-19

    Abstract: A method and an apparatus for providing a user interface which implements screen conversion by channel change in a three-dimensional view, are provided. The method includes receiving a signal for converting a screen into a screen of a first channel, calculating the relationship according to a channel order between the first channel and a second channel that is currently being broadcasted, outputting a portion of broadcasting images of the first channel to a region where broadcasting images of the second channel are output, according to the calculated result, and outputting all the broadcasting images of the first channel.

    Abstract translation: 提供了一种用于提供通过三维视图中的频道改变来实现屏幕转换的用户界面的方法和装置。 该方法包括接收用于将屏幕转换为第一频道的屏幕的信号,根据当前正在广播的第一频道和第二频道之间的频道顺序来计算关系,输出第一频道的广播图像的一部分 根据计算结果输出到第二频道的广播图像的区域,并输出第一频道的所有广播图像。

    METHOD OF FABRICATING AVALANCHE PHOTODIODE
    69.
    发明申请
    METHOD OF FABRICATING AVALANCHE PHOTODIODE 有权
    制备化合物的方法

    公开(公告)号:US20120156826A1

    公开(公告)日:2012-06-21

    申请号:US13273257

    申请日:2011-10-14

    CPC classification number: H01L31/107 H01L31/184 Y02E10/544

    Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

    Abstract translation: 一种方法包括:依次在衬底表面上生长光吸收层,分级层,电场缓冲层和放大层,形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分,在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层,并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

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