公开(公告)号：US20050146954A1

公开(公告)日：2005-07-07

申请号：US10506274

申请日：2003-02-17

申请人： Naing Win ,  Jun Cai ,  Joseph Jimson ,  Weng Lam

发明人： Naing Win ,  Jun Cai ,  Joseph Jimson ,  Weng Lam

IPC分类号： G06F1/26 ,  G06F1/30 ,  G06F12/16 ,  G11C5/14 ,  G11C16/20 ,  G11C16/22 ,  G11C7/00

CPC分类号： G06F1/30 ,  G11C5/143 ,  G11C16/20 ,  G11C16/225

摘要： The product has a power supply (P2) and a processor (P). The processor (P) has an input (PDD) for receiving a power-down signal indicating a status of the power supply (P2) and another input (Q) connected to another supply. The product also has a non-volatile memory (M) for storing data supplied by the processor (P). The processor (P) has an algorithm to detect a power-down status of the power supply (P2) by repeatedly checking the power-down signal and, upon detection that the power-down signal has a value (S0) corresponding to the power-down status, to complete an ongoing writing operation and stop the storage of data. The method prevents incorrect storage of data in a non-volatile memory by using the mentioned algorithm.

摘要翻译： 该产品具有电源（P 2）和一个处理器（P）。 处理器（P）具有用于接收指示电源状态（P 2）的断电信号和与另一电源连接的另一输入（Q）的输入（PDD）。 该产品还具有用于存储由处理器（P）提供的数据的非易失性存储器（M）。 处理器（P）具有通过重复检查掉电信号来检测电源（P 2）的掉电状态的算法，并且在检测到掉电信号具有对应于 停电状态，完成持续写入操作并停止数据存储。 该方法通过使用上述算法防止数据在非易失性存储器中的不正确存储。

公开(公告)号：US20050093070A1

公开(公告)日：2005-05-05

申请号：US10978627

申请日：2004-11-01

申请人： Jun Cai ,  Keng Lo

发明人： Jun Cai ,  Keng Lo

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/8234 ,  H01L23/60 ,  H01L23/62 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/76 ,  H01L29/78 ,  H01L31/062

CPC分类号： H01L29/0847 ,  H01L27/0266 ,  H01L29/1083 ,  H01L29/7833 ,  Y10S257/90

摘要： A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is achieved by adding n-wells below the source and drain regions. By tailoring the dopant concentration profiles of the p-well and n-wells provided in the fabrication process, peak dopant concentrations are moved below the silicon surface. This moves ESD conduction deeper into the IC where thermal conductivity is improved, thereby avoiding thermal damage occurring with surface conduction. The device does not require a salicidation block or additional implantation and uses standard NMOS fabrication processing steps, making it advantageous over prior art solutions.

摘要翻译： 描述了用于形成用于提供集成电路（IC）中的静电放电（ESD）保护的接地栅极NMOS（GGNMOS）器件的器件和方法。 该器件通过在源极和漏极区域下方添加n阱来实现。 通过调整在制造过程中提供的p阱和n阱的掺杂浓度分布，峰值掺杂剂浓度移动到硅表面以下。 这将ESD传导更深地传导到IC中，其中导热性得到改善，从而避免了表面传导引起的热损伤。 该器件不需要一个盐化阻滞或额外的植入，并且使用标准的NMOS制造处理步骤，使其优于现有技术的解决方案。

公开(公告)号：US08823051B2

公开(公告)日：2014-09-02

申请号：US11434545

申请日：2006-05-15

申请人： Jun Cai ,  Micheal Harley-Stead ,  Jim G. Holt

发明人： Jun Cai ,  Micheal Harley-Stead ,  Jim G. Holt

IPC分类号： H01L29/66

CPC分类号： H01L29/861 ,  H01L29/7391

摘要： A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.

摘要翻译： 在第一导电类型的衬底上的二极管连接的横向晶体管包括垂直寄生晶体管，寄生衬底漏电流通过该垂直寄生晶体管流动。 提供了用于分流远离垂直寄生晶体管的寄生衬底泄漏电流的至少一部分的装置。

公开(公告)号：US08722263B2

公开(公告)日：2014-05-13

申请号：US12754279

申请日：2010-04-05

申请人： Jun Cai ,  Joseph Nicholas Lovria ,  Sriram Ganapathy ,  Jaehak Jung ,  John P. Salvador

发明人： Jun Cai ,  Joseph Nicholas Lovria ,  Sriram Ganapathy ,  Jaehak Jung ,  John P. Salvador

IPC分类号： H01M8/04

CPC分类号： H01M8/04992 ,  H01M8/04097 ,  H01M8/04104 ,  H01M8/04201 ,  H01M8/04223 ,  H01M8/04225 ,  H01M8/04228 ,  H01M8/04303 ,  H01M8/04447 ,  H01M8/04753 ,  H01M8/04798 ,  H01M2250/20 ,  Y02T90/32

摘要： A method for determining when to inject hydrogen gas into the anode side of a fuel cell stack associated with a fuel cell vehicle when the vehicle is off. The method includes estimating the concentration of hydrogen gas in the anode side of the fuel cell stack using a gas concentration model and determining if the estimated concentration of hydrogen gas is below a first predetermined threshold. If the estimated hydrogen gas is less than the threshold, then hydrogen gas is injected into the anode side from a hydrogen source. While the hydrogen gas is being injected, the method compares the estimated concentration of the hydrogen gas in the anode side to a desired concentration, and generates an error signal there between. If the error signal is greater than a second predetermined threshold, the algorithm continues to inject the hydrogen into the anode side of the fuel cell stack.

摘要翻译： 一种用于在车辆关闭时确定何时将氢气注入与燃料电池车辆相关联的燃料电池堆的阳极侧的方法。 该方法包括使用气体浓度模型估计燃料电池堆的阳极侧的氢气浓度，并且确定氢气的估计浓度是否低于第一预定阈值。 如果估计氢气低于阈值，则氢气从氢源注入阳极侧。 在注入氢气的同时，该方法将阳极侧的氢气的估计浓度与期望浓度进行比较，并在其间产生误差信号。 如果误差信号大于第二预定阈值，则算法继续将氢气注入燃料电池堆的阳极侧。

公开(公告)号：US08623567B2

公开(公告)日：2014-01-07

申请号：US13082046

申请日：2011-04-07

申请人： Jun Cai ,  Seth E. Lerner ,  Loren Devries ,  Steven R. Falta

发明人： Jun Cai ,  Seth E. Lerner ,  Loren Devries ,  Steven R. Falta

IPC分类号： H01M8/04

CPC分类号： H01M8/04417 ,  H01M8/04425 ,  H01M8/04485 ,  H01M8/04686 ,  H01M8/04768 ,  H01M8/04776

摘要： A system and method for determining a loss of cooling fluid from a thermal sub-system in a fuel cell system. The method includes monitoring current feedback from a high temperature pump that pumps the cooling fluid through a coolant loop. A measured current from the pump is compared to an expected current for the system operating conditions, and if that current is significantly less than what is expected, then it may be as a result of low cooling fluid. If the measured current is less than the expected current for a predetermined period of time, then the system can take mitigating action as a result of a low cooling fluid. Further, if the pump speed is too low to provide an accurate current measurement, then it can be increased if an overflow tank level sensor indicates a low cooling fluid level.

摘要翻译： 一种用于确定来自燃料电池系统中的热子系统的冷却流体损失的系统和方法。 该方法包括监测来自高温泵的电流反馈，其将冷却流体泵送通过冷却剂回路。 将来自泵的测量电流与系统操作条件的预期电流进行比较，并且如果该电流显着小于预期的电流，则可能是低冷却流体的结果。 如果测量的电流在预定时间段内小于预期电流，则系统可以由于低冷却流体而采取减轻作用。 此外，如果泵速度太低而不能提供精确的电流测量，则如果溢流罐液位传感器指示低冷却液体水平，则其可以增加。

公开(公告)号：US20130181285A1

公开(公告)日：2013-07-18

申请号：US13351295

申请日：2012-01-17

申请人： Chun-Wai Ng ,  Ruey-Hsin Liu ,  Jun Cai ,  Hsueh-Liang Chou ,  Chi-Chih Chen

发明人： Chun-Wai Ng ,  Ruey-Hsin Liu ,  Jun Cai ,  Hsueh-Liang Chou ,  Chi-Chih Chen

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368

摘要： An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.

摘要翻译： 具有伪栅极的LDMOS晶体管包括形成在衬底上的扩展漂移区，形成在扩展漂移区中的漏极区，形成在扩展漂移区中的沟道区，形成在沟道区中的源极区和形成的电介质层 在扩展漂移区域上。 具有伪栅极的LDMOS晶体管还包括形成在沟道区上的有源栅极和形成在扩展漂移区上的伪栅极。 虚拟栅极有助于降低LDMOS晶体管的栅极电荷，同时保持LDMOS晶体管的击穿电压。

公开(公告)号：US08334043B2

公开(公告)日：2012-12-18

申请号：US12407468

申请日：2009-03-19

申请人： Jun Cai ,  Aleksander Jozef Pyzik ,  Kwanho Yang

发明人： Jun Cai ,  Aleksander Jozef Pyzik ,  Kwanho Yang

IPC分类号： B32B3/12 ,  B32B37/12 ,  C04B35/44 ,  C04B35/16

CPC分类号： C04B28/24 ,  C04B35/185 ,  C04B37/005 ,  C04B38/0019 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3244 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/5224 ,  C04B2235/5228 ,  C04B2235/5232 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/52 ,  C04B2237/597 ,  Y10T156/10 ,  Y10T428/24149 ,  C04B14/041 ,  C04B14/303 ,  C04B14/305 ,  C04B14/324 ,  C04B14/328 ,  C04B14/4643 ,  C04B38/0074 ,  C04B35/195 ,  C04B35/565

摘要： A ceramic honeycomb structure comprised of at least two separate smaller ceramic honeycombs that have been adhered together by a cement comprised of inorganic fibers and a binding phase wherein the smaller honeycombs and fibers are bonded together by the binding phase which is comprised of an amorphous silicate, aluminate or alumino-silicate glass and the cement has at most about 5% by volume of other inorganic particles. The cement may be made in the absence of other inorganic and organic additives while achieving a shear thinning cement, for example, by mixing oppositely charged inorganic binders in water together so as to make a useful cement for applying to the smaller honeycombs to be cemented.

摘要翻译： 陶瓷蜂窝结构体由至少两个分开的较小的陶瓷蜂窝组成，所述陶瓷蜂窝体通过由无机纤维构成的水泥和结合相粘合在一起，其中较小的蜂窝和纤维通过由无定形硅酸盐构成的结合相结合在一起， 铝酸盐或铝硅酸盐玻璃，并且该水泥具有至多约5体积％的其它无机颗粒。 水泥可以在没有其它无机和有机添加剂的情况下制成，同时实现剪切稀化水泥，例如通过将相反电荷的无机粘合剂混合在一起，以便制成用于施加到待粘合的较小蜂窝的有用的粘合剂。

公开(公告)号：US08324042B2

公开(公告)日：2012-12-04

申请号：US13005593

申请日：2011-01-13

申请人： Jun Cai

发明人： Jun Cai

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/4175 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7835

摘要： Complementary RF LDMOS transistors have gate electrodes over split gate oxides. A source spacer of a second conductivity type extends laterally from the source tap of a first conductivity type to approximately the edge of the gate electrode above the thinnest gate oxide. A body of a first conductivity type extends from approximately the bottom center of the source tap to the substrate surface and lies under most of the thin section of the split gate oxide. The source spacer is approximately the length of the gate sidewall oxide and is self aligned with gate electrode. The body is also self aligned with gate electrode. The drain is surrounded by at least one buffer region which is self aligned to the other edge of the gate electrode above the thickest gate oxide and extends to the below the drain and extends laterally under the thickest gate oxide. Both the source tap and drain are self aligned with the gate side wall oxides and are thereby spaced apart laterally from the gate electrode.

摘要翻译： 互补RF LDMOS晶体管在分隔栅极氧化物上具有栅电极。 第二导电类型的源间隔物从第一导电类型的源极阱横向延伸到最薄栅极氧化物上方的栅电极的大约边缘。 第一导电类型的主体从源极抽头的大约底部中心延伸到衬底表面，并且位于分裂栅极氧化物的薄部分的大部分之下。 源间隔物大约是栅极侧壁氧化物的长度，并且与栅电极自对准。 身体也与门电极自对准。 漏极由至少一个缓冲区包围，该缓冲区与最厚栅极氧化物上方的栅极电极的另一边缘自对准，并延伸到漏极的下方，并在最厚栅极氧化物下方横向延伸。 源极漏极和漏极都与栅极侧壁氧化物自对准，从而与栅电极横向间隔开。

公开(公告)号：US20120263914A1

公开(公告)日：2012-10-18

申请号：US13509480

申请日：2011-01-03

申请人： Jun Cai ,  Steven J. Martin

发明人： Jun Cai ,  Steven J. Martin

IPC分类号： B05D7/00 ,  B05D3/02 ,  B32B3/12

CPC分类号： F01N3/0222 ,  C04B35/6263 ,  C04B35/63488 ,  C04B35/6365 ,  C04B37/005 ,  C04B38/0019 ,  C04B2111/00793 ,  C04B2235/5228 ,  C04B2235/96 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/10 ,  C04B2237/341 ,  Y02T10/20 ,  Y10T428/24149 ,  C04B35/00 ,  C04B38/0012

摘要： Ceramic honeycomb structures and methods to make the same are disclosed. The structures may be comprised of at least two separate smaller ceramic honeycombs that have been coated with a polymer to create a polymeric barrier coating and adhered together with a cement comprised of inorganic fibers and a binding phase which is comprised of amorphous silicate, aluminite or alumino silicate glass and other inorganic particles. The polymer is selected such that it is penetratable into or covering the pores in the honeycomb structure to form a thin barrier layer thereon to mitigate migration of the inorganic fibers, binding phase and water into the pores. The polymer is adapted to be burned off or decomposed at or below cement and honeycomb skin firing temperatures, or at or below honeycomb operating temperatures during application to create a honeycomb structure that, when formed into an exhaust filter, does not have any undesired pressure drop increase due to cement migration.

摘要翻译： 公开了陶瓷蜂窝结构及其制造方法。 结构可以由至少两个单独的较小的陶瓷蜂窝组成，其已经被聚合物涂覆以产生聚合物阻挡涂层并且与由无机纤维组成的粘合剂和由无定形硅酸盐，铝酸盐或铝制成的结合相粘合在一起 硅酸盐玻璃等无机颗粒。 选择聚合物使得其可渗透入蜂窝结构中的孔或覆盖蜂窝状结构中的孔，以在其上形成薄的阻挡层，以减轻无机纤维的迁移，将相结合和水结合到孔中。 该聚合物适于在施用期间在水泥和蜂窝状皮肤焙烧温度下或在蜂窝状工作温度以下或低于蜂窝状的工作温度下燃烧或分解，以形成蜂窝状结构，当形成排气过滤器时，其不具有任何不期望的压降 由于水泥迁移而增加。

公开(公告)号：US20120255366A1

公开(公告)日：2012-10-11

申请号：US13082046

申请日：2011-04-07

申请人： Jun Cai ,  Seth E. Lerner ,  Loren Devries ,  Steven R. Falta

发明人： Jun Cai ,  Seth E. Lerner ,  Loren Devries ,  Steven R. Falta

IPC分类号： G01F1/00

CPC分类号： H01M8/04417 ,  H01M8/04425 ,  H01M8/04485 ,  H01M8/04686 ,  H01M8/04768 ,  H01M8/04776

摘要： A system and method for determining a loss of cooling fluid from a thermal sub-system in a fuel cell system. The method includes monitoring current feedback from a high temperature pump that pumps the cooling fluid through a coolant loop. A measured current from the pump is compared to an expected current for the system operating conditions, and if that current is significantly less than what is expected, then it may be as a result of low cooling fluid. If the measured current is less than the expected current for a predetermined period of time, then the system can take mitigating action as a result of a low cooling fluid. Further, if the pump speed is too low to provide an accurate current measurement, then it can be increased if an overflow tank level sensor indicates a low cooling fluid level.

摘要翻译： 一种用于确定来自燃料电池系统中的热子系统的冷却流体损失的系统和方法。 该方法包括监测来自高温泵的电流反馈，其将冷却流体泵送通过冷却剂回路。 将来自泵的测量电流与系统操作条件的预期电流进行比较，并且如果该电流显着小于预期的电流，则可能是低冷却流体的结果。 如果测量的电流在预定时间段内小于预期电流，则系统可以由于低冷却流体而采取减轻作用。 此外，如果泵速度太低而不能提供精确的电流测量，则如果溢流罐液位传感器指示低冷却液体水平，则其可以增加。