公开(公告)号：US20080035474A1

公开(公告)日：2008-02-14

申请号：US11877356

申请日：2007-10-23

申请人： You Wang ,  Jie DIAO ,  Stan TSAI ,  Lakshmanan Karuppiah

发明人： You Wang ,  Jie DIAO ,  Stan TSAI ,  Lakshmanan Karuppiah

IPC分类号： C25B9/00

CPC分类号： B23H5/08 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12

摘要： Embodiments of the invention generally provide methods and apparatuses for electroprocessing a substrate. In one embodiment, an apparatus for electrochemically processing the substrate includes a conductive processing surface adapted for processing a substrate thereon, and a polishing head for retaining the substrate against the processing surface. At least one drive mechanism provides relative motion between the conductive processing surface and the substrate. A first electrode is disposed below the conductive processing surface and is comprised of a first material. A second electrode is disposed radially inward of the first electrode and comprised of a second material.

摘要翻译： 本发明的实施方案通常提供用于对基底进行电处理的方法和装置。 在一个实施例中，用于电化学处理衬底的装置包括适于在其上处理衬底的导电处理表面和用于将衬底保持在处理表面上的抛光头。 至少一个驱动机构在导电处理表面和基底之间提供相对运动。 第一电极设置在导电处理表面下方并且由第一材料构成。 第二电极设置在第一电极的径向内侧并由第二材料构成。

公开(公告)号：US20080020682A1

公开(公告)日：2008-01-24

申请号：US11490883

申请日：2006-07-21

申请人： Renhe Jia ,  Jie Diao ,  You Wang ,  Stan Tsai ,  Jim Atkinson ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

发明人： Renhe Jia ,  Jie Diao ,  You Wang ,  Stan Tsai ,  Jim Atkinson ,  Lakshmanan Karuppiah ,  Liang-Yuh Chen

IPC分类号： B24B1/00

CPC分类号： B24B53/017

摘要： A method of conditioning processing pads increases the removal rate of conductive material from a substrate surface during polishing. In this method, the direction of rotation of the processing pad relative to the conditioning disc during conditioning is opposite the direction of rotation of the processing pad relative to the substrate during polishing.

摘要翻译： 调整处理垫的方法在抛光期间增加导电材料从衬底表面的去除速率。 在这种方法中，处理衬垫相对于调理盘在调节期间的旋转方向与抛光期间相对于衬底相对于处理垫的旋转方向。

公开(公告)号：US20070181442A1

公开(公告)日：2007-08-09

申请号：US11346891

申请日：2006-02-03

申请人： Renhe Jia ,  Jie Diao ,  You Wang ,  Stan Tsai ,  Lakshmanan Karuppiah

发明人： Renhe Jia ,  Jie Diao ,  You Wang ,  Stan Tsai ,  Lakshmanan Karuppiah

IPC分类号： B23H7/00

CPC分类号： B23H5/08 ,  B24B53/001 ,  B24B53/017 ,  C25F7/00

摘要： The embodiments of the invention generally relate to a method and apparatus for processing a substrate where reduced defect formation is desired. Embodiments of the invention may be beneficially practiced in chemical mechanical polishing and electrochemical mechanical polishing processes, among other processes where reduction in defect formation due to foam formation is desired. In one embodiment, a processing system for planarizing a substrate is provided that includes a platen, a pad disposed on the platen, a carrier head configured to retain the substrate against the pad while contacting an electronically conductive processing solution; and a foam removal assembly. The foam removal assembly is configured to remove foam from the electrically conductive processing solution, wherein a gap exists between a surface of the electrically conductive processing solution and a bottom edge of the foam removal assembly.

摘要翻译： 本发明的实施例一般涉及用于处理需要减少缺陷形成的衬底的方法和装置。 在化学机械抛光和电化学机械抛光工艺中，本发明的实施例以及其它需要减少形成泡沫的缺陷形成工艺也是有益的。 在一个实施例中，提供了一种用于平坦化衬底的处理系统，其包括压板，设置在压板上的衬垫，构造成在接触电子导电处理溶液的同时将衬底保持抵靠衬垫的载体头; 和泡沫去除组件。 泡沫去除组件被配置为从导电处理溶液中除去泡沫，其中在导电处理溶液的表面和泡沫去除组件的底部边缘之间存在间隙。

公开(公告)号：US20070151867A1

公开(公告)日：2007-07-05

申请号：US11431231

申请日：2006-05-10

申请人： Yongqi Hu ,  Stan Tsai ,  Gerald Alonzo ,  Lakshmanan Karuppiah

发明人： Yongqi Hu ,  Stan Tsai ,  Gerald Alonzo ,  Lakshmanan Karuppiah

IPC分类号： B23H9/14 ,  C25F3/00 ,  B23H3/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/20 ,  Y10T29/49155 ,  Y10T29/49156

摘要： An apparatus and a method with fluid flow assist elements for electrochemical mechanical processing is provided in this invention. In one embodiment, the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a second conductive layer disposed below the first conductive layer, an isolation layer disposed between the conductive layers, and a plurality of apertures, each having a first end formed through the first conductive layer and a second end formed through the second conductive layer, wherein the second ends of at least two apertures are laterally coupled by a channel.

摘要翻译： 本发明提供了一种具有用于电化学机械加工的流体流动辅助元件的装置和方法。 在一个实施例中，该装置包括具有适于接触基板的上表面的第一导电层，设置在第一导电层下方的第二导电层，设置在导电层之间的隔离层和多个孔，每个孔具有 通过第一导电层形成的第一端和通过第二导电层形成的第二端，其中至少两个孔的第二端由通道横向耦合。

公开(公告)号：US20070108066A1

公开(公告)日：2007-05-17

申请号：US11553438

申请日：2006-10-26

申请人： Stan Tsai ,  Lakshmanan Karuppiah

发明人： Stan Tsai ,  Lakshmanan Karuppiah

IPC分类号： B23H3/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  B24B49/10

摘要： Methods and apparatus for voltage-mode current control. A computer implemented method includes: (a) commencing a ECMP polishing step on a conductive film of a substrate; (b) setting a current output voltage of a voltage source, the current output voltage being set in accordance with a recipe for the ECMP polishing step; (c) measuring current flow through the conductive film; (d) calculating, based on the measured current flow, a current polishing rate; (e) determining whether an adjustment to the current output voltage is needed, the determining being based on a target polishing rate; and (f) when an adjustment is determined to be needed, calculating and effecting the adjustment to the current output voltage.

摘要翻译： 电压模式电流控制的方法和装置。 计算机实施方法包括：（a）在基板的导电膜上开始ECMP抛光步骤; （b）设定电压源的电流输出电压，根据ECMP研磨工序的配方设定电流输出电压; （c）测量通过导电膜的电流; （d）基于所测量的电流计算当前的抛光速率; （e）确定是否需要对当前输出电压的调整，所述确定基于目标抛光速率; 和（f）当确定需要调整时，计算并对当前输出电压进行调整。

公开(公告)号：US20060073768A1

公开(公告)日：2006-04-06

申请号：US11243488

申请日：2005-10-04

申请人： Rashid Mavliev ,  Lakshmanan Karuppiah

发明人： Rashid Mavliev ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/22 ,  B23H5/08 ,  B24B37/046 ,  B24B37/245 ,  H01L21/32125

摘要： An apparatus and method for manufacturing and refurbishing a conductive polishing pad assembly for performing an electrochemical process on a substrate is disclosed. The conductive polishing pad assembly is formed using a contact surface as a foundation that is coated with a metallic coating to create a conductive contact surface. In one embodiment, the metallic coating is a high purity tin/zinc alloy that is sprayed on the contact surface. The contact surface contains abrasive particles while the metallic coating provides at least conductive qualities to the contact surface.

公开(公告)号：US09073169B2

公开(公告)日：2015-07-07

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  G01B11/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US08554351B2

公开(公告)日：2013-10-08

申请号：US13599766

申请日：2012-08-30

申请人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

发明人： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  B24B49/00 ,  G01B11/28

CPC分类号： G05B15/02 ,  B24B37/013 ,  B24B49/12

摘要： Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

摘要翻译： 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

公开(公告)号：US20130189843A1

公开(公告)日：2013-07-25

申请号：US13747825

申请日：2013-01-23

申请人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

发明人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/31058

摘要： A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

摘要翻译： 用于平版化光致抗蚀剂的浆料包括磨料颗粒，氧化剂，表面活化化学品和溶剂。

公开(公告)号：US20130186850A1

公开(公告)日：2013-07-25

申请号：US13357535

申请日：2012-01-24

申请人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： C09K13/00 ,  C09K13/02 ,  H05K3/26

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L23/53238 ,  H01L23/53257 ,  H01L2924/0002 ,  H05K3/045 ,  H05K3/107 ,  H01L2924/00

摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

摘要翻译： 用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂， 和溶剂。 浆液的pH为7-12。