摘要:
An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).
摘要:
A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.
摘要:
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.
摘要:
Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.