INDUCTIVE MONITORING OF CONDUCTIVE LOOPS
    61.
    发明申请

    公开(公告)号:US20190035699A1

    公开(公告)日:2019-01-31

    申请号:US16150009

    申请日:2018-10-02

    Abstract: In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

    Grouping Spectral Data From Polishing Substrates

    公开(公告)号:US20180321026A1

    公开(公告)日:2018-11-08

    申请号:US16024312

    申请日:2018-06-29

    Abstract: Among other things, a computer-based method is described. The method comprises receiving, by one or more computers, a plurality of measured spectra reflected from a substrate at a plurality of different positions on the substrate. The substrate comprises at least two regions having different structural features. The method also comprises performing, by the one or more computers, a clustering algorithm on the plurality of measured spectra to separate the plurality of measured spectra into a number of groups based on the spectral characteristics of the plurality of measured spectra; selecting one of the number of groups to provide a selected group having a subset of spectra from the plurality of measured spectra; and determining, in the one or more computers, at least one characterizing value for the substrate based on the subset of spectra of the selected group.

    Peak-based endpointing for chemical mechanical polishing
    67.
    发明授权
    Peak-based endpointing for chemical mechanical polishing 有权
    基于峰值的化学机械抛光终点

    公开(公告)号:US09564377B2

    公开(公告)日:2017-02-07

    申请号:US14088933

    申请日:2013-11-25

    Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

    Abstract translation: 抛光系统接收光谱中所选峰的一个或多个目标参数,抛光衬底,在衬底被抛光时测量从衬底反射的光的当前光谱,识别当前光谱中所选择的峰,测量 当前频谱中所选峰的一个或多个当前参数将所选峰的当前参数与目标参数进行比较,并且当当前参数和目标参数具有预定关系时,停止抛光衬底。

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