公开(公告)号：US07112541B2

公开(公告)日：2006-09-26

申请号：US10840754

申请日：2004-05-06

申请人： Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

发明人： Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/469

CPC分类号： H01L21/76826 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在室内存在RF功率的情况下，从包含有机硅化合物和氧化气体的气体混合物中沉积低介电常数膜。 在低介电常数薄膜以低于在低介电常数膜上沉积富含氧化物的盖子的流速下沉积后，室内继续进行RF功率和有机硅化合物和氧化气体的流动。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20080146007A1

公开(公告)日：2008-06-19

申请号：US11610991

申请日：2006-12-14

申请人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/20

CPC分类号： H01L21/02167 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

摘要： A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.

摘要翻译： 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。

公开(公告)号：US07115508B2

公开(公告)日：2006-10-03

申请号：US10816606

申请日：2004-04-02

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20050202685A1

公开(公告)日：2005-09-15

申请号：US10801190

申请日：2004-03-15

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US20060189162A1

公开(公告)日：2006-08-24

申请号：US11405852

申请日：2006-04-18

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

公开(公告)号：US20050227499A1

公开(公告)日：2005-10-13

申请号：US10816606

申请日：2004-04-02

申请人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： C23C16/44 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US07700486B2

公开(公告)日：2010-04-20

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  G01F7/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20060219175A1

公开(公告)日：2006-10-05

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： C23C16/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US08382885B2

公开(公告)日：2013-02-26

申请号：US12914822

申请日：2010-10-28

申请人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Hichem M'Saad

发明人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Hichem M'Saad

IPC分类号： B01D53/02

CPC分类号： C23C16/4402 ,  C23C16/4481 ,  C23C16/52

摘要： A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.

摘要翻译： 用于过滤衬底处理设备中的流体的过滤器包括彼此连接的第一和第二阶段。 输送系统向过滤器提供蒸发的液体。 过滤器的第一阶段包括碱性化合物，并且过滤器的第二阶段包括干燥剂。 第二过滤器包括具有可渗透膜的渗透过滤器以过滤流体。 还描述了使用过滤器过滤流体以减少不期望的工艺残余物的形成的方法。