公开(公告)号：US20050202685A1

公开(公告)日：2005-09-15

申请号：US10801190

申请日：2004-03-15

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US20060189162A1

公开(公告)日：2006-08-24

申请号：US11405852

申请日：2006-04-18

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

公开(公告)号：US07115508B2

公开(公告)日：2006-10-03

申请号：US10816606

申请日：2004-04-02

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20050227499A1

公开(公告)日：2005-10-13

申请号：US10816606

申请日：2004-04-02

申请人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： C23C16/44 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US07700486B2

公开(公告)日：2010-04-20

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  G01F7/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20060219175A1

公开(公告)日：2006-10-05

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： C23C16/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20050042885A1

公开(公告)日：2005-02-24

申请号：US10645675

申请日：2003-08-20

申请人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/5096 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

公开(公告)号：US06911403B2

公开(公告)日：2005-06-28

申请号：US10645675

申请日：2003-08-20

申请人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

发明人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： C23C16/5096 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

摘要翻译： 用于在衬底上沉积有机硅酸盐层的方法包括在用于在处理室中的RF功率存在下从包含有机硅化合物的气体混合物沉积有机硅酸盐层的工艺顺序期间改变一个或多个处理条件。 在一个方面，在处理过程中，衬底与处理室中的气体分配歧管之间的距离是变化的。 优选地，沉积有机硅酸盐层的方法使等离子体对衬底的损伤最小化。

公开(公告)号：US08129290B2

公开(公告)日：2012-03-06

申请号：US11400275

申请日：2006-04-07

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

摘要翻译： 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

公开(公告)号：US20060269693A1

公开(公告)日：2006-11-30

申请号：US11400275

申请日：2006-04-07

申请人： Mihaela Balseanu ,  Michael Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H05H1/24 ,  B05D3/00

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

摘要翻译： 沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅 ，然后重复这些步骤以增加由此产生的氮化硅的厚度。 也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力 由此形成。 在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。