公开(公告)号：US20220298629A1

公开(公告)日：2022-09-22

申请号：US17829007

申请日：2022-05-31

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, JR. ,  Bryan C. Hendrix ,  Scott L. Battle, JR. ,  John Gregg

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/455

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US11421320B2

公开(公告)日：2022-08-23

申请号：US16210244

申请日：2018-12-05

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John Gregg

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C16/455

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US10895010B2

公开(公告)日：2021-01-19

申请号：US15334040

申请日：2016-10-25

Applicant: Entegris, Inc.

Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

IPC: C23C16/448 ,  C23C16/44 ,  C23C14/48 ,  C23C16/455 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

公开(公告)号：US10392700B2

公开(公告)日：2019-08-27

申请号：US15525796

申请日：2015-03-28

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John M. Cleary

IPC: C23C16/448 ,  C23C16/18

Abstract: Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.

公开(公告)号：US10385452B2

公开(公告)日：2019-08-20

申请号：US14404633

申请日：2013-05-31

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  John N. Gregg ,  Scott L. Battle ,  Donn K. Naito ,  Kyle Bartosh ,  John M. Cleary ,  Sebum Cheon ,  Jordan Hodges

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/448 ,  C23C16/455 ,  B01B1/00

Abstract: Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.

公开(公告)号：US10186570B2

公开(公告)日：2019-01-22

申请号：US14765161

申请日：2014-02-05

Applicant: Entegris, Inc. ,  ATMI Korea Co., Ltd

Inventor： Bryan C. Hendrix ,  Philip S. H. Chen ,  Weimin Li ,  Woosung Jang ,  Dingkai Guo

IPC: H01L29/94 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  C01G23/00 ,  C01G25/00 ,  C01G35/00 ,  C23C16/18

Abstract: A high dielectric constant (k≥40), low leakage current (≤10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

公开(公告)号：US20170037511A1

公开(公告)日：2017-02-09

申请号：US15334040

申请日：2016-10-25

Applicant: Entegris, Inc.

Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/30 ,  C23C16/16 ,  C23C16/18 ,  C23C14/48 ,  C23C16/08

CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract translation: 挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

公开(公告)号：US09443736B2

公开(公告)日：2016-09-13

申请号：US14400793

申请日：2013-05-22

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  Susan V. DiMeo ,  Bryan C. Hendrix ,  Weimin Li

IPC: H01L21/00 ,  H01L21/28 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C09D5/24 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L21/28229 ,  C07F7/10 ,  C09D5/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45525 ,  H01L28/40 ,  H01L29/516

Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.

公开(公告)号：US20150191819A1

公开(公告)日：2015-07-09

申请号：US14404633

申请日：2013-05-31

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  John N. Gregg ,  Scott L. Battle ,  Donn K. Naito ,  Kyle Bartosh ,  John M. Cleary ,  Sebum Cheon ,  Jordan Hodges

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/458 ,  B01B1/005 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/455

Abstract: Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.

Abstract translation: 公开了系统，试剂支撑盘，粒子抑制装置和方法。 在一个方面，一种系统包括蒸发器容器，该蒸发器容器具有包围内部容积的一个或多个内壁和被配置为在内部容积内垂直堆叠的多个试剂支撑盘。 多个试剂支撑托盘中的每一个构造成在内部空间内可垂直堆叠以形成一堆试剂支撑托盘。 多个试剂支撑托盘中的一个或多个配置成将通过相邻的试剂支撑托盘之间的气体流引导到试剂托盘的堆叠中，以引起气体流与特定试剂载体中的源试剂材料相互作用 在进入试剂托盘堆叠中的多个试剂载体托盘中的下一个之前，托盘。