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    TUNING MAGNETIC ANISOTROPY FOR SPIN-TORQUE MEMORY
    63.
    发明申请
    TUNING MAGNETIC ANISOTROPY FOR SPIN-TORQUE MEMORY 审中-公开

    公开(公告)号：US20180226569A1

    公开(公告)日：2018-08-09

    申请号：US15888136

    申请日：2018-02-05

    Applicant: Everspin Technologies, Inc.

    Inventor： Han-Jong CHIA ,  Jon Slaughter

    IPC: H01L43/08 ,  H01F10/32

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L43/10

    Abstract: Techniques for configuring the layers included in the free portion of a spin-torque magnetoresistive device are presented that allow for characteristics of the free portion to be tuned to meet the needs of various applications. In one embodiment, high data retention is achieved by balancing the perpendicular magnetic anisotropy of the ferromagnetic layers in the free portion. In other embodiments, imbalanced ferromagnetic layers provide for lower switching current for the magnetoresistive device. In various embodiments, different coupling layers can be used to provide exchange coupling between the ferromagnetic layers in the free portion, including oscillatory coupling layers, ferromagnetic coupling layers using materials that can alloy with the neighboring ferromagnetic layers, and discontinuous layers of dielectric material such as MgO that result in limited coupling between the ferromagnetic layers and increases perpendicular magnetic anisotropy (PMA) at the interface with those layers.

    Magnetic field sensor
    67.
    发明授权
    Magnetic field sensor 有权

    公开(公告)号：US09640753B2

    公开(公告)日：2017-05-02

    申请号：US14168095

    申请日：2014-01-30

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Jijun Sun ,  Phillip Mather ,  Srinivas Pietambaram ,  Jon Slaughter ,  Renu Whig ,  Nicholas Rizzo

    IPC: G01R33/06 ,  H01L43/10 ,  G01R33/09 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

    Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

    Magnetoresistive memory element and method of fabricating same
    68.
    发明授权
    Magnetoresistive memory element and method of fabricating same 有权
    磁阻存储元件及其制造方法

    公开(公告)号：US09553258B2

    公开(公告)日：2017-01-24

    申请号：US14860657

    申请日：2015-09-21

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jijun Sun ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine ,  Frederick Mancoff

    IPC: H01L21/8234 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive memory element (for example, a spin-torque magnetoresistive memory element), includes first and second dielectric layers, wherein at least one of the dielectric layers is a magnetic tunnel junction. The memory element also includes a free magnetic layer having a first surface in contact with the first dielectric layer and a second surface in contact with the second dielectric layer. The free magnetic layer, which is disposed between the first and second dielectric layers, includes (i) a first high-iron interface region located along the first surface of the free magnetic layer, wherein the first high-iron interface region has at least 50% iron by atomic composition, and (ii) a first layer of ferromagnetic material adjacent to the first high-iron interface region, the first high-iron interface region between the first layer of ferromagnetic material and the first surface of the free magnetic layer.

    Abstract translation: 磁阻存储元件（例如，自旋扭矩磁阻存储元件）包括第一和第二电介质层，其中至少一个电介质层是磁性隧道结。 存储元件还包括具有与第一介电层接触的第一表面和与第二介电层接触的第二表面的自由磁性层。 设置在第一和第二电介质层之间的自由磁性层包括（i）沿着自由磁性层的第一表面设置的第一高铁界面区域，其中第一高铁界面区域具有至少50 以及（ii）与第一高铁界面区域相邻的第一铁磁材料层，第一铁磁材料层与自由磁性层的第一表面之间的第一高铁界面区域。

    HIGH TEMPERATURE DATA RETENTION IN MAGNETORESISTIVE RANDOM ACCESS MEMORY
    69.
    发明申请
    HIGH TEMPERATURE DATA RETENTION IN MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
    磁阻随机访问存储器中的高温数据保持

    公开(公告)号：US20160104519A1

    公开(公告)日：2016-04-14

    申请号：US14879061

    申请日：2015-10-08

    Applicant: Everspin Technologies, Inc.

    Inventor： Jon Slaughter ,  Jason Allen Janesky

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0097 ,  G11C17/16 ,  G11C17/18 ,  G11C29/006 ,  G11C29/06

    Abstract: Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

    Abstract translation: 提出了使用自旋扭矩磁存储单元作为抗熔丝来存储和检索数据的技术和电路。 包括电路以允许将更大幅度的电压和电流施加到磁存储器单元以有意地分解包括磁性隧道结的介电层。 使用具有与完整电介质层的正电阻磁隧道结的磁存储单元来存储第一数据状态，并且使用具有与分解电介质层的磁性隧道结的磁存储单元来存储第二数据状态。 可以在晶片探测期间以这种方式存储数据，然后在设备被包括在系统中之后，随后直接读出或复制到设备上的其他磁性或非磁性存储器中以用于操作。

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