公开(公告)号：US07649262B2

公开(公告)日：2010-01-19

申请号：US12537328

申请日：2009-08-07

申请人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

发明人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体处理中的局部金属沉淀形成（LMPF）的结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US20090294968A1

公开(公告)日：2009-12-03

申请号：US12537328

申请日：2009-08-07

申请人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

发明人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC分类号： H01L23/532

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体处理中的局部金属沉淀形成（LMPF）的结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US20090200673A1

公开(公告)日：2009-08-13

申请号：US12431289

申请日：2009-04-28

申请人： Kaushik Chanda ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Jason P. Gill ,  Baozhen Li ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Jason P. Gill ,  Baozhen Li ,  Chih-Chao Yang

IPC分类号： H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76865 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76886

摘要： A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.

摘要翻译： 制造器件的方法包括在形成在衬底和布线层中的蚀刻沟槽中沉积电迁移（EM）电阻材料。 EM电阻材料形成为与下面的扩散阻挡层和布线层电接触。 该方法还包括形成与EM电阻材料和布线层电接触的通孔结构。 该方法产生防止开路的结构。

公开(公告)号：US07397260B2

公开(公告)日：2008-07-08

申请号：US11163948

申请日：2005-11-04

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/02 ,  H01L23/58 ,  G01N25/20

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).

摘要翻译： 提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。 至少一些导电互连件包括金属板，金属连接线和上金属通孔。 所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。 金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。 上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

公开(公告)号：US07384824B2

公开(公告)日：2008-06-10

申请号：US11362680

申请日：2006-02-27

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L21/82 ,  H01L29/00

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。 熔丝连接在电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：US20070115018A1

公开(公告)日：2007-05-24

申请号：US11163948

申请日：2005-11-04

申请人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence Clevenger ,  Andrew Cowley ,  Ronald Filippi ,  Jason Gill ,  Tom Lee ,  Baozhen Li ,  Paul McLaughlin ,  Du Nguyen ,  Hazara Rathore ,  Timothy Sullivan ,  Chih-Chao Yang

发明人： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence Clevenger ,  Andrew Cowley ,  Ronald Filippi ,  Jason Gill ,  Tom Lee ,  Baozhen Li ,  Paul McLaughlin ,  Du Nguyen ,  Hazara Rathore ,  Timothy Sullivan ,  Chih-Chao Yang

IPC分类号： G01R31/26

CPC分类号： G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).

摘要翻译： 提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。 至少一些导电互连件包括金属板，金属连接线和上金属通孔。 所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。 金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。 上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

公开(公告)号：US20070040277A1

公开(公告)日：2007-02-22

申请号：US11550853

申请日：2006-10-19

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US07037824B2

公开(公告)日：2006-05-02

申请号：US10844533

申请日：2004-05-13

申请人： Lloyd G. Burrell ,  Edward E. Cooney, III ,  Jeffrey P. Gambino ,  John E. Heidenreich, III ,  Hyun Koo Lee ,  Mark D. Levy ,  Baozhen Li ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Kwong Hon Wong ,  Sally J. Yankee

发明人： Lloyd G. Burrell ,  Edward E. Cooney, III ,  Jeffrey P. Gambino ,  John E. Heidenreich, III ,  Hyun Koo Lee ,  Mark D. Levy ,  Baozhen Li ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Kwong Hon Wong ,  Sally J. Yankee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

公开(公告)号：US20050194689A1

公开(公告)日：2005-09-08

申请号：US10708486

申请日：2004-03-06

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US5916700A

公开(公告)日：1999-06-29

申请号：US12778

申请日：1998-01-23

申请人： Roswell J. Ruka ,  Lewis Kuo ,  Baozhen Li

发明人： Roswell J. Ruka ,  Lewis Kuo ,  Baozhen Li

IPC分类号： H01M4/86 ,  H01M4/90 ,  H01M8/12 ,  H01M8/10

CPC分类号： H01M4/9033 ,  H01M4/9016 ,  H01M2004/8689 ,  H01M2008/1293 ,  H01M2300/0074

摘要： An air electrode material for a solid oxide fuel cell is disclosed. The electrode material is based on lanthanum manganite having a perovskite-like crystal structure ABO.sub.3. The A-site of the air electrode material preferably comprises La, Ca, Ce and at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd. The B-site of the electrode material comprises Mn with substantially no dopants. The ratio of A:B is preferably slightly above 1. A preferred air electrode composition is of the formula La.sub.w Ca.sub.x Ln.sub.y Ce.sub.z MnO.sub.3, wherein Ln comprises at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd, w is from about 0.55 to about 0.56, x is from about 0.255 to about 0.265, y is from about 0.175 to about 0.185, and z is from about 0.005 to about 0.02. The air electrode material possesses advantageous chemical and electrical properties as well as favorable thermal expansion and thermal cycle shrinkage characteristics.

摘要翻译： 公开了一种用于固体氧化物燃料电池的空气电极材料。 电极材料基于具有钙钛矿型晶体结构ABO 3的亚锰酸镧。 空气电极材料的A位优选包含La，Ca，Ce和至少一种选自Sm，Gd，Dy，Er，Y和Nd的镧系元素。 电极材料的B位置包括基本上没有掺杂剂的Mn。 A：B的比例优选略高于1.优选的空气电极组合物具有式LawCaxLnyCezMnO 3，其中Ln包含至少一种选自Sm，Gd，Dy，Er，Y和Nd的镧系元素，w为约0.55至 约0.56，x为约0.255至约0.265，y为约0.175至约0.185，z为约0.005至约0.02。 空气电极材料具有有利的化学和电学性能以及有利的热膨胀和热循环收缩特性。