公开(公告)号：US07667300B2

公开(公告)日：2010-02-23

申请号：US11600741

申请日：2006-11-17

申请人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Huaxiang Yin

发明人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Huaxiang Yin

IPC分类号： H01L29/04

CPC分类号： H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385

摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

公开(公告)号：US07662678B2

公开(公告)日：2010-02-16

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底上形成铝（Al）层，通过在真空下重结晶Al层形成更高取向的Al层，在更高取向的Al层上形成更高取向的γ-Al 2 O 3层 和/或在更高取向的γ-Al 2 O 3层上外延生长硅层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US07629205B2

公开(公告)日：2009-12-08

申请号：US11330344

申请日：2006-01-12

申请人： Hans S. Cho ,  Hyuck Lim ,  Takashi Noguchi ,  Jang-yeon Kwon

发明人： Hans S. Cho ,  Hyuck Lim ,  Takashi Noguchi ,  Jang-yeon Kwon

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/66575 ,  H01L29/66757 ,  H01L29/66772

摘要： A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.

摘要翻译： 提供一种能够通过使用具有高反射率的第一栅电极和具有高反射率的第二栅电极的退火工艺中的栅电极下的硅层损坏薄膜晶体管（TFT）和制造TFT的方法 。 TFT的制造方法包括形成双极栅电极，其包括由具有高热阻的材料形成的第一栅电极和由第一栅电极上的具有高光反射率的金属形成的第二栅极，并形成 通过将激光束照射到硅层的整个上表面上，通过在栅极下方的硅层的两侧退火掺杂区域来实现源极和漏极。

公开(公告)号：US07611932B2

公开(公告)日：2009-11-03

申请号：US11199272

申请日：2005-08-09

申请人： Huaxiang Yin ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Ji-sim Jung

发明人： Huaxiang Yin ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Ji-sim Jung

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/785

摘要： A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.

摘要翻译： 提供一种制造薄膜晶体管的方法。 该方法包括：在衬底上形成非晶硅层，通过图案化非晶硅层，形成源极区，漏极区和电介入源区和漏区之间的多个通道的区域，退火区域 通道，在通道表面上依次形成栅极氧化膜和栅电极，并掺杂源极区和漏极区。

公开(公告)号：US20090149007A1

公开(公告)日：2009-06-11

申请号：US12370642

申请日：2009-02-13

申请人： Ji-sim JUNG ,  Takashi Noguchi ,  Hans S. Cho ,  Do-young Kim ,  Kyung-bae Park

发明人： Ji-sim JUNG ,  Takashi Noguchi ,  Hans S. Cho ,  Do-young Kim ,  Kyung-bae Park

IPC分类号： H01L21/36

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a polysilicon layer stacked on the thermal conductive layer; and a functional device disposed on the polysilicon layer. The functional device is any one of a transistor, a light emitting device, and a memory device. The functional device may be a thin film transistor including a gate stack stacked on the polysilicon layer.

摘要翻译： 提供一种电子设备及其制造方法。 该装置包括塑料基板，层叠在塑料基板上的透明导热层，堆叠在导热层上的多晶硅层; 以及设置在所述多晶硅层上的功能元件。 功能器件是晶体管，发光器件和存储器件中的任何一个。 功能器件可以是包括堆叠在多晶硅层上的栅极堆叠的薄膜晶体管。

公开(公告)号：US07531240B2

公开(公告)日：2009-05-12

申请号：US11311228

申请日：2005-12-20

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans S. Cho ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Young-soo Park ,  Hans S. Cho ,  Huaxiang Yin

IPC分类号： B32B9/04 ,  H01L31/36 ,  B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L21/32134 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66772

摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.

摘要翻译： 提供了一种制造具有局部集成的单晶硅层的大型衬底的方法。 该方法包括：在支撑板上形成缓冲层; 分别制造单晶硅层; 将单独制造的具有预定厚度的单晶硅层附着到支撑板中的预定部分; 形成具有预定厚度的非单晶硅层以覆盖单晶硅层和缓冲层; 以及处理所述非单晶硅层以暴露所述非单晶硅层的表面并且用所述非晶硅层的表面对所述非单晶硅层的表面进行平坦化。

公开(公告)号：US20080261333A1

公开(公告)日：2008-10-23

申请号：US12213424

申请日：2008-06-19

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

IPC分类号： H01L21/28

CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/31691 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C.

摘要翻译： 提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。 根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。 根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以形成在低于约500℃至约550℃的温度。

公开(公告)号：US07439197B2

公开(公告)日：2008-10-21

申请号：US11267264

申请日：2005-11-07

申请人： Jang-yeon Kwon ,  Hyuk Lim ,  Takashi Noguchi ,  Young-soo Park ,  Suk-pil Kim ,  Hans S. Cho ,  Ji-sim Jung ,  Kyung-bae Park ,  Do-young Kim

发明人： Jang-yeon Kwon ,  Hyuk Lim ,  Takashi Noguchi ,  Young-soo Park ,  Suk-pil Kim ,  Hans S. Cho ,  Ji-sim Jung ,  Kyung-bae Park ,  Do-young Kim

IPC分类号： H01L21/00 ,  C30B23/00

CPC分类号： H01L29/66765 ,  C23C14/3464 ,  C23C14/46 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

摘要： A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.

摘要翻译： 公开了一种在衬底上制备半导体膜的方法。 该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管 。 所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。 能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。