公开(公告)号：US07560754B2

公开(公告)日：2009-07-14

申请号：US11231918

申请日：2005-09-21

Applicant: Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

Inventor： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

IPC: H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.

Abstract translation: CMOS固态成像装置，其被配置为抑制由像素缺陷引起的白斑和暗电流的发生，并且还增加饱和信号量。 相邻的像素由在其上的扩散层和绝缘层形成的元件隔离部分分离，并且元件隔离部分的绝缘层形成在与pn结侧面上的pn结的位置相等或更浅的位置 构成像素的光电转换部分38的累积层。

公开(公告)号：US07351598B2

公开(公告)日：2008-04-01

申请号：US11604490

申请日：2006-11-27

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L21/00

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US07105867B2

公开(公告)日：2006-09-12

申请号：US11073865

申请日：2005-03-08

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L31/0328

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at its position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在用于进行光电转换的基板（21）的表层部分上的光接收传感器部分，用于传送从光接收读出的信号电荷的电荷转移部分 传感器部分，通过绝缘膜（26）在其位于大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成并且互连到转移 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在转移电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。

公开(公告)号：US20060169978A1

公开(公告)日：2006-08-03

申请号：US11340180

申请日：2006-01-26

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L31/0376

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US07084443B2

公开(公告)日：2006-08-01

申请号：US10815875

申请日：2004-04-01

Applicant: Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

Inventor： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

IPC: H01L31/062

CPC classification number: H01L27/14843 ,  H01L27/14623 ,  H01L27/14689 ,  H01L27/14837

Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

公开(公告)号：US20050151162A1

公开(公告)日：2005-07-14

申请号：US11073865

申请日：2005-03-08

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L31/0224 ,  H04N5/335 ,  H04N5/341 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3722 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface layer portion of a substrate (21) that performs a photoelectric conversion, a charge transfer section that transfers a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

公开(公告)号：US06750159B2

公开(公告)日：2004-06-15

申请号：US09878841

申请日：2001-06-11

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H11L21336

CPC classification number: H01L27/14609 ,  H01L21/28123 ,  H01L27/1463 ,  H01L27/14683

Abstract: An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage Vth of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surface level to stabilize the operation of the semiconductor apparatus. A semiconductor apparatus having a MIS transistor (1), wherein a gate electrode (4) of said MIS transistor (1), which mainly contributes to the operation of a circuit, is continuously formed to a position above a bypass film (8) made of an insulation film through which a leak current is able to easily flow as compared with a gate insulation film (7) of said MIS transistor (1) under the same voltage.

Abstract translation: 本发明的目的是提供一种半导体装置及其制造方法，其中减少了每个晶体管的晶体管的阈值电压Vth的偏差，以消除栅极绝缘膜和表面中的固定电荷的产生 以稳定半导体装置的运行。 一种具有MIS晶体管（1）的半导体装置，其中主要有助于电路操作的所述MIS晶体管（1）的栅极（4）连续地形成在旁路膜（8）上方的位置 的绝缘膜，与相同电压下的所述MIS晶体管（1）的栅极绝缘膜（7）相比，泄漏电流能够容易地流动。

公开(公告)号：US5808333A

公开(公告)日：1998-09-15

申请号：US724959

申请日：1996-10-02

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Kazuya Yonemoto ,  Takahisa Ueno ,  Junji Yamane

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Kazuya Yonemoto ,  Takahisa Ueno ,  Junji Yamane

IPC: H01L27/08 ,  H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/378 ,  H01L31/062 ,  H01L29/76 ,  H01L29/94 ,  H01L31/113

CPC classification number: H01L27/14654 ,  H01L27/14609 ,  H01L27/14689 ,  H01L31/035236

Abstract: In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).

Abstract translation: 在具有像素MOS晶体管的放大型固态成像器件中，可以抑制发光，并且可以增加信号电荷量。 在第一导电型半导体衬底（22）上依次形成第二导电型溢出阻挡区（23）和第一导电型半导体区（24）。 在第一导电型半导体区域（24）上形成包括源极区域（27），漏极区域（28）和栅极部分（26）的像素MOS晶体管（29），第二导电型沟道阻挡层 在栅极部分（26）的第一导电型半导体区域（24）中累积的信号电荷的区域（41）形成在形成在漏区（28）正下方的第一导电类型半导体区域（24）内。

公开(公告)号：US5576570A

公开(公告)日：1996-11-19

申请号：US438366

申请日：1995-05-10

Applicant: Nobuhiko Ohsawa ,  Shinichi Ito ,  Hideshi Abe

Inventor： Nobuhiko Ohsawa ,  Shinichi Ito ,  Hideshi Abe

IPC: H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H01L29/10 ,  H01L29/76 ,  H01L29/00 ,  H01L29/94 ,  H01L31/062

CPC classification number: H01L27/0218 ,  H01L29/1087

Abstract: Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type semiconducting substrate, and a pMOS transistor formed in an n-well formed on the p-type semiconducting substrate. The low voltage circuit is composed of a CMOS circuit having a pMOS transistor which is formed in an n-well formed on the p-type semiconducting substrate, and an nMOS transistor formed in a p-well formed in the n-well.

Abstract translation: 公开了一种CMOS集成电路，其中具有正极性和负极性的高压电路和大规模低电压电路形成在同一芯片上。 高电压电路由在p型半导体衬底上形成的nMOS晶体管的CMOS电路和形成在p型半导体衬底上形成的n阱中的pMOS晶体管构成。 低电压电路由具有形成在p型半导体衬底上形成的n阱中的pMOS晶体管的CMOS电路和形成在n阱中形成的p阱中的nMOS晶体管组成。

公开(公告)号：US5334829A

公开(公告)日：1994-08-02

申请号：US5796

申请日：1993-01-19

Applicant: Takahisa Ueno ,  Hideshi Abe

Inventor： Takahisa Ueno ,  Hideshi Abe

IPC: H01L27/14 ,  H01L21/66 ,  H01L23/34 ,  H01J40/14

CPC classification number: H01L22/20 ,  H01L23/345 ,  H01L2924/0002

Abstract: A CCD image sensor includes a package (2) in which there are packaged a CCD solid state imaging device (1) in which a getter layer is formed on the rear surface of a silicon substrate and a photo-sensing portion and a CCD register are formed on the surface of the silicon substrate and a substrate electrode (3 ) of a plate configuration disposed on the lower surface of the CCD solid state imaging device (1 ). A heating device (5 ) is disposed on the lower surface of the substrate electrode (3 ) through an insulating material (4 ) of a plate configuration. The heating device (5) is formed of a resistance pattern (7) that is formed on the surface of an insulating body (6) of a plate configuration by a well-known thick film forming technique. A lattice defect that is caused by a metal ion or the like entered into the CCD solid state imaging device in accordance with an aging change can be repaired without disassembling the solid state image sensor. Thus, the occurrence of a fixed pattern noise on a reproduced picture can be reduced readily.

Abstract translation: CCD图像传感器包括封装（2），其中封装有CCD固态成像器件（1），其中在硅衬底的后表面上形成吸气剂层，并且光敏部分和CCD寄存器 形成在硅基板的表面上，以及设置在CCD固态成像装置（1）的下表面上的板结构的基板电极（3）。 加热装置（5）通过板结构的绝缘材料（4）设置在基板电极（3）的下表面上。 加热装置（5）由通过公知的厚膜成形技术形成在板构造的绝缘体（6）的表面上的电阻图案（7）形成。 可以在不拆卸固态图像传感器的情况下修复由根据老化变化进入CCD固态成像装置的由金属离子等引起的晶格缺陷。 因此，可以容易地减少再现图像上的固定图案噪声的发生。