公开(公告)号：US08750700B2

公开(公告)日：2014-06-10

申请号：US13246322

申请日：2011-09-27

申请人： Hideaki Yamamoto

发明人： Hideaki Yamamoto

IPC分类号： G02B7/28

CPC分类号： G02B27/0006 ,  G02B1/11 ,  G02B27/0018 ,  G03B13/20 ,  G03B17/12

摘要： The camera includes a field lens into which light from the image taking optical system enters, a conductive lens holding member holding the field lens, a conductive member electrically connected with the lens holding member, a secondary image-forming lens causing the light from the field lens to form plural optical images, a light-receiving element converting the plural optical images into electric signals, a focus detection part detecting a focus state of the image taking optical system by using the electric signals, and a conductive camera chassis. A coating having a light transmissive property and a conductive property is provided on an entrance surface of the field lens. The coating is electrically connected with the camera chassis through the conductive member and the lens holding member.

摘要翻译： 相机包括：来自图像拍摄光学系统的光进入的场透镜，保持场透镜的导电透镜保持构件，与透镜保持构件电连接的导电构件，使来自场的光的次级图像形成透镜 透镜以形成多个光学图像，将多个光学图像转换为电信号的光接收元件，通过使用电信号检测图像拍摄光学系统的聚焦状态的焦点检测部分和导电相机底盘。 具有透光性和导电性的涂层设置在场透镜的入射面上。 该涂层通过导电构件和透镜保持构件与相机机架电连接。

公开(公告)号：US20130090755A1

公开(公告)日：2013-04-11

申请号：US13643911

申请日：2011-07-25

申请人： Hidetake Kiryu ,  Hirokazu Matsushita ,  Kenji Kura ,  Akihiko Matsumura ,  Hideaki Yamamoto ,  Hiroshi Oishi

发明人： Hidetake Kiryu ,  Hirokazu Matsushita ,  Kenji Kura ,  Akihiko Matsumura ,  Hideaki Yamamoto ,  Hiroshi Oishi

IPC分类号： G05B11/01

CPC分类号： G05B11/01 ,  B23Q17/20 ,  B23Q17/22 ,  B23Q17/2461 ,  B23Q17/2466 ,  B23Q17/2471 ,  G05B19/4069 ,  G05B2219/35303

摘要： Provided is a numerically-controlled machine tool provided with: a tool measuring sensor that measures the length and diameter of a tool; a workpiece measuring sensor that measures the three-dimensional shape, and position and orientation of a workpiece in a non-contact manner by laser beam etc.; and a control device, which, after determining the position of the machining starting point and the slope of a reference plane on the basis of information from the workpiece measuring sensor, on the basis of an inputted machining program, machines the workpiece to the intended final form by simulation from the information from the sensors, the position of the machining starting point and the slope of the reference plane, thereby determining whether there are any machining loads greater than or equal to a specified value, and whether any of the workpiece has been left behind, and displays the determined results via a display device.

摘要翻译： 提供了一种数控机床，其具有：测量工具的长度和直径的工具测量传感器; 工件测量传感器，其通过激光束等以非接触方式测量工件的三维形状，位置和取向; 以及控制装置，其基于来自工件测量传感器的信息，在基于输入的加工程序的基础上确定加工起始点的位置和参考平面的坡度之后，将工件加工成预期的最终 通过从传感器的信息，加工起点的位置和参考平面的斜率进行模拟，从而确定是否存在大于或等于指定值的加工负载，以及是否已经有任何工件 留下，并通过显示设备显示确定的结果。

公开(公告)号：US20120249846A1

公开(公告)日：2012-10-04

申请号：US13428515

申请日：2012-03-23

申请人： Akihiro Nishio ,  Ichiro Onuki ,  Koichi Fukuda ,  Ryo Yamasaki ,  Hideaki Yamamoto ,  Makoto Oikawa

发明人： Akihiro Nishio ,  Ichiro Onuki ,  Koichi Fukuda ,  Ryo Yamasaki ,  Hideaki Yamamoto ,  Makoto Oikawa

IPC分类号： H04N5/232 ,  H01L27/146 ,  H04N5/335

CPC分类号： H04N5/3696 ,  G03B13/36 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H04N5/23212

摘要： A solid-state image sensor which comprises a pixel group in which unit pixels each including a microlens and a plurality of photo-electric converters are arrayed two-dimensionally, wherein a shielding unit that shields part of all of a plurality of photo-electric converters corresponding to a single microlens is provided in a portion of the unit pixels.

摘要翻译： 一种固态图像传感器，其包括像素组，其中包括微透镜和多个光电转换器的单位像素二维排列，其中屏蔽单元屏蔽所有多个光电转换器 对应于单个微透镜的单位像素的一部分。

公开(公告)号：US20110242340A1

公开(公告)日：2011-10-06

申请号：US13074556

申请日：2011-03-29

申请人： Makoto Miyawaki ,  Hideaki Yamamoto

发明人： Makoto Miyawaki ,  Hideaki Yamamoto

IPC分类号： H04N5/232 ,  H04N5/228

CPC分类号： G03B3/04 ,  H04N5/23212 ,  H04N5/23287

摘要： An image pickup element unit is used for an image pickup apparatus having an autofocus function configured to determine a direction in which an in-focus position is located by wobbling in an optical axis direction an image pickup element configured to photoelectrically convert an optical image formed by an image pickup optical system. The image pickup element unit includes a deformable member connected with the image pickup element and configured to deform when receiving a force, a support configured to support the deformable member and to serve as a fulcrum when the deformable member deforms so that the deformable member can move the image pickup element in the optical axis direction, and a weight fixed onto the deformable member and configured to move reverse to the image pickup element as the image pickup element moves.

摘要翻译： 图像拾取元件单元用于具有自动聚焦功能的图像拾取装置，该自动对焦功能被配置为通过在光轴方向上摆动来确定对焦位置所位于的方向的图像拾取元件，该图像拾取元件被配置为光电转换由 摄像光学系统。 图像拾取元件单元包括与图像拾取元件连接并被构造成在接受力时变形的可变形构件，构造成支撑可变形构件的支撑件，并且当可变形构件变形时可用作支点，使得可变形构件能够移动 所述图像拾取元件沿光轴方向，以及固定在所述可变形构件上的配重，并被配置为当所述图像拾取元件移动时与所述图像拾取元件反向移动。

公开(公告)号：US07170073B2

公开(公告)日：2007-01-30

申请号：US11076943

申请日：2005-03-11

申请人： Kazuhiro Ishida ,  Kazuhiro Ogawa ,  Takeo Yazawa ,  Hideaki Yamamoto ,  Hideo Morisaki

发明人： Kazuhiro Ishida ,  Kazuhiro Ogawa ,  Takeo Yazawa ,  Hideaki Yamamoto ,  Hideo Morisaki

IPC分类号： C22C38/32 ,  B21B3/02 ,  B23K9/04

CPC分类号： B21B3/02 ,  B21B1/024 ,  B21B1/026 ,  B21B2001/022 ,  B21B2001/028 ,  B23K15/00 ,  B23K35/308 ,  B23K35/3086 ,  B23K2103/05 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/44 ,  C22C38/54 ,  H01M8/021 ,  Y02P70/56

摘要： A stainless steel slab containing B, wherein a protecting material is joined onto at least two faces across the bloom from each other in a stainless steel bloom containing B of 0.3–2.5 mass %, being integrated into one-piece by forming a weld metal comprising a stainless steel with chemical composition that satisfies the relationship expressed by following formulas (1)–(4), and a method to produce a steel product by rolling said slab. Further, it is preferable to interpose an insert material between above stainless steel bloom and above protecting material in bonding process. 15≦Cr eq≦30,  (1) 4≦Cr eq−Ni eq≦17,  (2) Cr eq=Cr+1.5 Si+Mo−5 B,  (3) Ni eq=Ni+30 (C+N)+0.5 Mn  (4) Herein, each symbol of a chemical element designates the content (mass %) of relevant chemical element contained in steel. Accordingly, it makes it possible to subject a stainless steel slab containing B to hot working without generating edge cracking, so as to be used as a source material of a neutron shielding container and a separator of a fuel cell.

摘要翻译： 一种含有B的不锈钢板，其中保护材料通过含有0.3-2.5质量％的B的不锈钢开坯彼此连接在至少两个面上，通过形成焊接金属而形成一体，所述焊接金属包括 具有满足下述式（1）〜（4）所示关系的化学成分的不锈钢，以及轧制所述板坯来制造钢材的方法。 此外，优选在接合工序中将插入材料插入上述不锈钢开花和上述保护材料之间。 <？in-line-formula description =“In-line Formulas”end =“lead”？> 15 <= CReq <= 30，（1）<？in-line-formula description =“In-line Formulas”end = “tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 4 <= CReq-Ni eq <= 17，（2）<？in-line-formula description = “直线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> Cr eq = Cr + 1.5 Si + Mo-5 B，（3 ）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？Ni eq = Ni + 30（C + N）+0.5 Mn（4）<？在线公式描述=“在线公式”end =“tail”？>这里，化学元素的每个符号表示 钢中含有的相关化学元素。 因此，可以使含有B的不锈钢板坯进行热加工而不会产生边缘裂纹，从而用作中子屏蔽容器的源材料和燃料电池的隔板。

公开(公告)号：US5889573A

公开(公告)日：1999-03-30

申请号：US928719

申请日：1997-09-12

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5781255A

公开(公告)日：1998-07-14

申请号：US725256

申请日：1996-10-04

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Tetsuaki Suzuki ,  Mitsuo Nakatani ,  Michio Tsukii ,  Akira Sasano ,  Saburo Oikawa ,  Ryoji Oritsuki

IPC分类号： G02F1/133 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G02F2001/136295

摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

摘要翻译： 在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。 阳极化氧化膜的厚度设定为1000埃以上。 可以提高制造产量和可靠性。

公开(公告)号：US5602048A

公开(公告)日：1997-02-11

申请号：US443036

申请日：1995-05-17

申请人： Kazuhiro Komori ,  Satoshi Meguro ,  Toshiaki Nishimoto ,  Hitoshi Kume ,  Hideaki Yamamoto

发明人： Kazuhiro Komori ,  Satoshi Meguro ,  Toshiaki Nishimoto ,  Hitoshi Kume ,  Hideaki Yamamoto

IPC分类号： H01L21/28 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/423

CPC分类号： H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42324

摘要： An EEPROM (Electrically Erasable Programmable Read Only Memory) has a structure in which the corners of a floating gate electrode of each memory cell MISFET near the source region thereof are rounded.The EEPROM is manufactured by a method characterized in that the ions of an impurity at a high dose are implanted in self-alignment with the floating gate electrode and control gate electrode of the memory cell MISFET so as to form the source and drain regions thereof, whereupon an oxidizing treatment is carried out.

摘要翻译： EEPROM（电可擦除可编程只读存储器）具有其源极区域附近的每个存储单元MISFET的浮置栅极的角部为圆形的结构。 通过以下方法制造EEPROM：其特征在于，将高剂量杂质的离子与存储单元MISFET的浮置栅电极和控制栅电极自对准地注入，以形成其源区和漏区， 于是进行氧化处理。

公开(公告)号：US5541748A

公开(公告)日：1996-07-30

申请号：US255958

申请日：1994-06-07

申请人： Kikuo Ono ,  Junichi Ohwada ,  Hideaki Yamamoto ,  Hiroaki Asuma ,  Nobutake Konishi

发明人： Kikuo Ono ,  Junichi Ohwada ,  Hideaki Yamamoto ,  Hiroaki Asuma ,  Nobutake Konishi

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/1368 ,  H01L27/1214 ,  G02F1/136286

摘要： A liquid crystal display provided with a matrix of inverted-stagger thin-film transistors has a plurality of gate insulating films formed over gate lines and including one insulating film formed in contact with gate electrodes of the thin-film transistors and in self-alignment with gate lines in the picture display area of the liquid crystal display. The rest of the gate insulating films not crossing the gate electrodes and in contact with a semiconductor layer are patterned in conformity with drain electrodes (data lines), and a semiconductor layer and an insulating film not crossing the drain electrode and crossing the gate electrodes are patterned at the same time. The method has less steps than the conventional method, is capable of fabricating a liquid crystal display capable of displaying pictures in a high picture quality at a high yield rate.

摘要翻译： 具有反交错薄膜晶体管的矩阵的液晶显示器具有形成在栅极线上的多个栅极绝缘膜，并且包括与薄膜晶体管的栅电极接触形成的一个绝缘膜，并与 液晶显示屏的图像显示区域中的栅极线。 不与栅电极交叉并与半导体层接触的栅极绝缘膜的其余部分图案化为与漏电极（数据线）一致，半导体层和绝缘膜不与漏电极交叉并且与栅电极交叉是绝缘膜 在同一时间图案化。 该方法具有比传统方法更少的步骤，能够制造能够以高产率以高图像质量显示图像的液晶显示器。

公开(公告)号：US5359206A

公开(公告)日：1994-10-25

申请号：US674328

申请日：1991-04-15

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L23/48 ,  H01L27/01 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备 水晶显示面板。 在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容） 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 还公开了在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。