TECHNIQUES FOR FORMING VERTICAL TRANSPORT FET

    公开(公告)号:US20200027991A1

    公开(公告)日:2020-01-23

    申请号:US16037993

    申请日:2018-07-17

    Abstract: Techniques for reducing work function metal variability along the channel of VFET devices are provided. In one aspect, a method of forming a VTFET device includes: patterning fins in a wafer; forming bottom source/drains at a base of the fins and bottom spacers on the bottom source/drains; forming gate stacks over the fins including a gate conductor having a combination of work function metals including an outer layer and at least one inner layer of the work function metals; isotropically etching the work function metals which recesses the gate stacks with an outwardly downward sloping profile; isotropically etching the at least one inner layer while covering the outer layer of the work function metals to eliminate the outwardly downward sloping profile of the gate stacks; forming top spacers above the gate stacks; and forming top source and drains at tops of the fins. A VTFET device is also provided.

    CO-INTEGRATION OF HIGH CARRIER MOBILILTY PFET AND NFET DEVICES ON THE SAME SUBSTRATE USING LOW TEMPERATURE CONDENSATION

    公开(公告)号:US20200006147A1

    公开(公告)日:2020-01-02

    申请号:US16564705

    申请日:2019-09-09

    Abstract: Embodiments of the invention are directed to fin-based field effect transistor (FET) devices formed on a substrate. In a non-limiting example, the devices a first fin formed in a p-type FET (PFET) region of the substrate, wherein the first fin includes a top region, a central region, and a bottom region. The central region of the first fin includes an epitaxial first material in-situ doped with a first type of semiconductor material at a first concentration level. The top region of the first fin includes the epitaxial first material in-situ doped with the first type of semiconductor material at the first concentration level, along with an anneal-induced second concentration level of the first type of semiconductor material. A final concentration level of the first type of semiconductor material in the top region includes the first concentration level and the second concentration level.

    Inverse T-shaped contact structures having air gap spacers

    公开(公告)号:US10522649B2

    公开(公告)日:2019-12-31

    申请号:US15965264

    申请日:2018-04-27

    Abstract: A method of fabricating air gap spacers is provided. The method includes forming gate structures to extend upwardly from a substrate with source or drain (S/D) regions disposed between the gate structures and with contact trenches defined above the S/D regions and between the gate structures. The method further includes disposing contacts in the contact trenches. The method also includes configuring the contacts to define open-ended air gap spacer trenches with the gate structures. In addition, the method includes forming a cap over the open-ended air gap spacer trenches to define the open-ended air gap spacer trenches as air gap spacers. The gate structures have an initial structure prior to and following the disposing and the configuring of the contacts and prior to and following the forming of the cap.

    VERTICAL FIELD EFFECT TRANSISTOR WITH REDUCED GATE TO SOURCE/DRAIN CAPACITANCE

    公开(公告)号:US20190386102A1

    公开(公告)日:2019-12-19

    申请号:US16455096

    申请日:2019-06-27

    Abstract: A method of forming a fin field effect transistor device is provided. The method includes forming a vertical fin layer on a bottom source/drain layer, and forming one or more fin templates on the vertical fin layer. The method further includes forming a vertical fin below each of the one or more fin templates. The method further includes reducing the width of each of the vertical fins to form one or more thinned vertical fins, wherein at least a portion of the fin template overhangs the sides of the underlying thinned vertical fin. The method further includes depositing a bottom spacer layer on the bottom source/drain layer, wherein the bottom spacer layer has a non-uniform thickness that tapers in a direction towards the thinned vertical fins.

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