摘要:
A radiotherapy system includes: a waveguide, an adjustable waveguide, and a non-reciprocal circuit element. The waveguide transmits a high-frequency wave from a high-frequency power source to an acceleration tube. The adjustable waveguide is included in said waveguide and transforms a part of said waveguide. The non-reciprocal circuit element is provided between said acceleration tube and said adjustable waveguide in said waveguide. Said acceleration tube accelerates charged particles for generating therapeutic radiation by using said high-frequency wave.
摘要:
To provide a method of arranging ferritin by which a high rate of the number of the molecular film spots on which sole ferritin molecule was arranged in effect, with respect to total number of the molecular film spots provided for arranging ferritin (sole arrangement rate) is achieved is objected to. Specifically, in Fer8 ferritin having a sequence excluding 7 amino acids of from the second to the eighth, from an amino acid sequence (Fer0 sequence) translated from a naturally occurring DNA sequence, lysine at position 91 is substituted with glutamic acid.
摘要:
A method for selectively arranging ferritin modified with a peptide, which specifically binds to titanium, to titanium formed on a substrate surface is provided.The method for arranging ferritin of the present invention is characterized in that ferritin is selectively bound on titanium on a substrate by modifying the N-terminal part of ferritin with a peptide which specifically binds to titanium. Also, the method for arranging ferritin of the present invention is characterized in that selectivity for titanium can be markedly improved by adding a nonionic surface activating agent.
摘要:
An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
摘要翻译:本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒(Fe 2 O 3 O 3微粒)嵌入到硅氧化膜中而形成还原的微粒(FeO微粒) ,并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒(FeO微粒)的再氧化。
摘要:
A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively arranged on a part including titanium or silicon nitride (SiN) in an efficient manner by adding a nonionic surface active agent. Also, selective arrangement capability of ferritin can be markedly improved by modifying the N-terminus of ferritin with a certain peptide.
摘要:
A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.
摘要:
Using a gene recombination technique, a glutamic acid and an aspartic acid positioned in a channel of apoferritin are substituted with serine having a small size and no charges. Then, a glutamic acid positioned in a holding portion is substituted with a basic amino acid such as lysine or a neutral amino acid. Furthermore, at least one cysteine is introduced into the holding portion. This prevents a repulsive force due to electrostatic interaction between (AuCl4)− having a negative charge and a negative amino acid from occurring, which facilitates the capture of (AuCl4)− into the channel and the holding portion. The (AuCl4)− captured into the holding portion is subsequently reduced to Au, and thus apoferritin including gold particles can be produced.
摘要:
A novel structure comprising two substrates disposed closely each other, in which an organic molecular layer is formed on the surface of at least one substrate wherein the gap between the surface of the organic molecular layer on one substrate and the surface of the other substrate or the surface of the organic molecular layer on the other substrate is maintained to be usually less than 100 μm, preferably less than 1 μm is provided. A motor, actuator, and vibration-absorbing table comprising such structure are also provided.
摘要:
(1) Transgenic medaka fish into which a polynucleotide having the nucleotide sequence from 211 to 1935 position represented by Sequence ID No: 1 is introduced, (2) A method of producing medaka fish having one or more thrombi, comprising the step of raising the transgenic medaka fish described in (1) in the presence of estrogen, (3) Medaka fish having one or more thrombi produced by the method described in (2), and (4) A method of testing an estrogen-like acting substance, comprising the steps of raising the transgenic medaka fish described in (1) in test water, and observing whether or not one or more thrombi are formed in the medaka fish after the raising step.
摘要:
A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.