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    Self-lubricating enameled wire
    61.
    发明授权
    Self-lubricating enameled wire 失效
    自润滑漆包线

    公开(公告)号：US06534717B2

    公开(公告)日：2003-03-18

    申请号：US09910955

    申请日：2001-07-24

    Applicant: Kazunori Suzuki ,  Kiyoshi Watanabe ,  Tomonori Sakamoto ,  Sadami Itonaga

    Inventor： Kazunori Suzuki ,  Kiyoshi Watanabe ,  Tomonori Sakamoto ,  Sadami Itonaga

    IPC: H01B700

    CPC classification number: C08K5/29 ,  C08K5/01 ,  C08K5/54 ,  C08L79/08

    Abstract: A enameled wire having 100 parts by weight of a polyamide-imide resin, 1 to 5 parts by weight of a lubricant, 1 to 200 parts by weight of a masking agent-stabilized isocyanate, and 1 to 30 parts by weight of a silane coupling agent are dissolved or dispersed in a solvent to prepare a coating composition. The coating composition is then coated directly or through other insulator on the circumference of a conductor, and the coating is then baked to form a lubricating layer.

    Abstract translation: 一种漆包线，其具有100重量份的聚酰胺酰亚胺树脂，1至5重量份的润滑剂，1至200重量份的掩蔽剂稳定的异氰酸酯和1至30重量份的硅烷偶联剂 试剂溶解或分散在溶剂中以制备涂料组合物。 然后将涂料组合物直接或通过导体圆周上的其它绝缘体涂布，然后将涂层烘烤以形成润滑层。

    Process for producing halogenated organic compound
    62.
    发明授权
    Process for producing halogenated organic compound 失效
    卤代有机化合物的制备方法

    公开(公告)号：US5866731A

    公开(公告)日：1999-02-02

    申请号：US836488

    申请日：1997-05-05

    Applicant: Kiyoshi Watanabe ,  Tomoo Matsuura

    Inventor： Kiyoshi Watanabe ,  Tomoo Matsuura

    IPC: B01J31/02 ,  B01J31/06 ,  C07B39/00 ,  C07C17/08 ,  C07C17/087 ,  C07C205/08 ,  C07C205/11 ,  C07C17/20

    CPC classification number: B01J31/0202 ,  B01J31/0231 ,  B01J31/0237 ,  B01J31/065 ,  B01J31/068 ,  C07B39/00 ,  C07C17/08 ,  C07C17/087 ,  B01J2231/32

    Abstract: In a process for producing a halogenated organic compound wherein a hydrogen halide is added to an organic compound having an aliphatic carbon-carbon unsaturated bond, a catalyst is used, which is an organic compound having at least two polar groups in the molecule each containing a heteroatom having an unshared electron pair, and having no aliphatic carbon-carbon unsaturated bond. A typical example of the catalyst is a polyoxyalkylene glycol or a polyol having at least 3 hydroxyl groups.

    Abstract translation: PCT No.PCT / JP95 / 02292 Sec。 371日期：1997年5月5日 102（e）日期1997年5月5日PCT提交1995年11月9日PCT公布。 公开号WO96 / 15084 日期1996年5月23日在其中将卤化氢加入到具有脂肪族碳 - 碳不饱和键的有机化合物中的卤化有机化合物的制备方法中，使用催化剂，其为具有至少两个极性基团的有机化合物 各自含有具有未共享电子对的杂原子的分子，并且不具有脂族碳 - 碳不饱和键。 催化剂的典型实例是具有至少3个羟基的聚氧化亚烷基二醇或多元醇。

    Unshielded twisted pair cable
    63.
    发明授权
    Unshielded twisted pair cable 失效
    非屏蔽双绞线电缆

    公开(公告)号：US5597981A

    公开(公告)日：1997-01-28

    申请号：US398566

    申请日：1995-03-03

    Applicant: Shinji Hinoshita ,  Akinari Nakayama ,  Kiyoshi Watanabe ,  Hideki Yagyu ,  Shinya Ishi ,  Shigeru Iwata

    Inventor： Shinji Hinoshita ,  Akinari Nakayama ,  Kiyoshi Watanabe ,  Hideki Yagyu ,  Shinya Ishi ,  Shigeru Iwata

    IPC: H01B7/295 ,  H01B11/02 ,  H01B7/00

    CPC classification number: H01B11/02 ,  H01B7/295

    Abstract: In an unshielded twisted pair cable, a predetermined number of pairs which are twisted by a predetermined lay-length are covered by a protective sheath. Insulations for insulating conductors for the pairs and the protective sheath are wholly or partially of halogen free polymer having a low dielectric loss tangent and flame-retarding properties. The insulations have a dielectric loss tangent of less than 1.times.10.sup.-2 at 150 MHz and a 2% modulus of at least 0.3 kgf/mm.sup.2.

    Abstract translation: 在非屏蔽双绞线电缆中，预定数量的被预定延伸线绞合的成对线被保护套覆盖。 用于成对和绝缘护套的绝缘导体的绝缘体全部或部分是具有低介电损耗角正切和阻燃性能的无卤聚合物。 绝缘体在150MHz时具有小于1×10 -2的介电损耗角正切和至少0.3kgf / mm2的2％模量。

    Solid oxide electrolyte fuel cell having dimpled surfaces of a power generation film
    64.
    发明授权
    Solid oxide electrolyte fuel cell having dimpled surfaces of a power generation film 失效
    具有发电膜的凹凸表面的固体氧化物电解质燃料电池

    公开(公告)号：US5518829A

    公开(公告)日：1996-05-21

    申请号：US390485

    申请日：1995-02-17

    Applicant: Tokuki Satake ,  Hitoshi Miyamoto ,  Kiyoshi Watanabe ,  Shigeaki Yamamuro

    Inventor： Tokuki Satake ,  Hitoshi Miyamoto ,  Kiyoshi Watanabe ,  Shigeaki Yamamuro

    IPC: H01M4/86 ,  C25B9/00 ,  H01M8/02 ,  H01M8/12 ,  H01M8/24 ,  H01M8/10

    CPC classification number: C25B9/00 ,  H01M8/1231 ,  H01M8/2425

    Abstract: The invention relates to a solid oxide electrolyte fuel cell (SOFC) which can be used as a cell for water electrolysis, CO.sub.2 electrolysis and other electrolyses, as well as for power generation. In a SOFC in which both surfaces of a power generation film comprising three layers of a fuel electrode, a solid electrolyte, and an oxygen electrode are formed with a number of dimples, the thickness of a yttria-stabilized zirconia film that constitutes the solid electrolyte is 5 to 100 .mu.m, and the thickness of an oxygen electrode material that constitutes the oxygen electrode which is provided on one side of the yttria-stabilized zirconia film is 200 to 2,000 .mu.m. As a result, the power generation performance can be greatly improved and a sufficiently strong oxygen electrode material prevents a thin yttria-stabilized zirconia film from being damaged in manual operations.

    Abstract translation: 本发明涉及一种固体氧化物电解质燃料电池（SOFC），其可用作水电解，二氧化碳电解和其他电解池以及发电。 在其中形成具有多个凹坑的三层燃料电极，固体电解质和氧电极的发电膜的两个表面的SOFC中，构成固体电解质的氧化钇稳定的氧化锆膜的厚度 为氧化钇稳定的氧化锆膜的一面，构成氧电极的氧电极材料的厚度为200〜2000μm。 结果，可以大大提高发电性能，并且足够强的氧电极材料防止在手动操作中薄氧化钇稳定的氧化锆膜被损坏。

    Method for fabricating a semiconductor device including the step of forming an alignment mark
    65.
    发明授权
    Method for fabricating a semiconductor device including the step of forming an alignment mark 失效
    包括形成对准标记的步骤的半导体器件的制造方法

    公开(公告)号：US5002902A

    公开(公告)日：1991-03-26

    申请号：US510890

    申请日：1990-04-18

    Applicant: Kiyoshi Watanabe

    Inventor： Kiyoshi Watanabe

    IPC: H01L21/3205 ,  H01L21/027 ,  H01L21/30 ,  H01L21/768 ,  H01L23/544

    CPC classification number: H01L23/544 ,  H01L21/76802 ,  H01L21/76879 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002

    Abstract: A method for fabricating a semiconductor device comprises the steps of providing a first insulator layer on the top surface of a substrate so as to cover a first surface region defined on the top surface of the substrate; providing a second insulator layer on the substrate so as to cover a second surface region defined on the top surface of the substrate such that the second insulator layer further covers the first insulator layer, forming a first hole acting as an alignment mark and a second hole acting as a contact hole throughout the second insulator layer respectively in correspondence to the first surface region and the second surface region simultaneously by an etching process applied to the second insulator layer. The etching process is performed such that the etching proceeds into the first insulator layer with a first etching rate when forming the first hole and such that the etching proceeds into the substrate with a second etching rate smaller than the first etching rate when forming the second hole, and thereby the first hole penetrates into the first layer at least for a first depth and the second hole penetrates into the substrate for a second depth which is smaller than the first depth. Further a conductor material is deposited on the second insulator layer including a part of the second insulator layer corresponding to the first surface region and another part of the second insulator layer corresponding to the second surface region to form a conductor layer such that the second hole is filled by the conductor material with a substantially flat top surface being formed at a part of the conductor layer covering the second hole while the first hole is filled only partially.

    Abstract translation: 一种制造半导体器件的方法包括以下步骤：在衬底的顶表面上提供第一绝缘体层，以便覆盖限定在衬底的顶表面上的第一表面区域; 在所述衬底上提供第二绝缘体层，以覆盖限定在所述衬底的顶表面上的第二表面区域，使得所述第二绝缘体层进一步覆盖所述第一绝缘体层，形成用作对准标记的第一孔和第二孔 通过施加到第二绝缘体层的蚀刻工艺，分别对应于第一表面区域和第二表面区域分别作用于整个第二绝缘体层的接触孔。 执行蚀刻处理，使得当形成第一孔时蚀刻以第一蚀刻速率进入第一绝缘体层，并且使得当形成第二孔时蚀刻以小于第一蚀刻速率的第二蚀刻速率进入衬底 并且因此第一孔至少对于第一深度渗透到第一层中，并且第二孔渗透到衬底中比第一深度小的第二深度。 此外，导体材料沉积在第二绝缘体层上，包括对应于第一表面区域的第二绝缘体层的一部分和与第二表面区域相对应的第二绝缘体层的另一部分，以形成导体层，使得第二孔为 由导体材料填充，其中基本上平坦的顶表面形成在覆盖第二孔的导体层的一部分，而第一孔仅部分填充。

    Lymphotoxin DNA, lymphotoxin expression vector
    66.
    发明授权
    Lymphotoxin DNA, lymphotoxin expression vector 失效
    淋巴毒素DNA，淋巴毒素表达载体

    公开(公告)号：US4988624A

    公开(公告)日：1991-01-29

    申请号：US882109

    申请日：1986-07-03

    Applicant: Tetsu Kakutani ,  Kenji Yamashita ,  yasuhiro Ikenaka ,  Hajime Kawaharada ,  Kiyoshi Watanabe

    Inventor： Tetsu Kakutani ,  Kenji Yamashita ,  yasuhiro Ikenaka ,  Hajime Kawaharada ,  Kiyoshi Watanabe

    IPC: C07K14/525 ,  C12N15/19 ,  C12N15/85

    CPC classification number: C07K14/525 ,  C12N15/85

    Abstract: A chromosomal DNA sequence which codes for human lymphotoxin, a lymphotoxin expression vector which contains a DNA sequence wherein a chromosomal DNA sequence coding for human lymphotoxin and promoter region which functions in animal cell are linked together, lymphotoxin resistant cell line, transformed animal cell culture which is formed by transforming cultured animal cell with a lymphotoxin expression vector which contains a chromosomal DNA sequence coding for human lymphotoxin and, a process for preparing human lymphotoxin, which comprises transforming cultured animal cell with a lymphotoxin expression vector which contains a chromosomal DNA sequence coding for human lymphotoxin, culturing the transformed cell culture to produce human lymphotoxin, and collecting the human lymphotoxin.According to the present invention, LT which is expected for application as the antitumor agent can be produced effectively in a large amount.

    Abstract translation: 编码人淋巴毒素的染色体DNA序列，含有DNA序列的淋巴毒素表达载体，其中编码人类淋巴毒素的染色体DNA序列和在动物细胞中起作用的启动子区连接在一起，淋巴毒素抗性细胞系，转化的动物细胞培养物 是通过用含有编码人淋巴毒素的染色体DNA序列的淋巴毒素表达载体转化培养的动物细胞，以及制备人淋巴毒素的方法形成的，其包括用含有染色体DNA序列编码的淋巴毒素表达载体转化培养的动物细胞， 人淋巴毒素，培养转化的细胞培养物以产生人淋巴毒素，并收集人淋巴毒素。 根据本发明，可以有效地大量生产预期用作抗肿瘤剂的LT。

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