Near-infrared absorbing film compositions
    62.
    发明授权
    Near-infrared absorbing film compositions 有权
    近红外吸收膜组合物

    公开(公告)号:US08586283B2

    公开(公告)日:2013-11-19

    申请号:US13608409

    申请日:2012-09-10

    IPC分类号: G03F7/00 G03F7/004 G03F7/028

    CPC分类号: G03F7/091 G03F9/7026

    摘要: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译: 包含至少(i)一种或多种近红外吸收性三苯胺类染料的可固化液体制剂,和(ii)一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底,以及在近红外吸收膜位于微电子衬底之间的情况下,用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

    HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF
    64.
    发明申请
    HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
    混合光电组合物和使用其的图案形成方法

    公开(公告)号:US20130122421A1

    公开(公告)日:2013-05-16

    申请号:US13293672

    申请日:2011-11-10

    IPC分类号: G03F7/20 G03F7/027 G03F7/004

    摘要: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

    摘要翻译: 本发明涉及一种用于改进分辨率的混合光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括辐射敏感酸产生剂,交联剂和具有疏水性单体单元的聚合物和含有羟基的亲水性单体单元。 至少一些羟基被具有低活化能的酸不稳定部分保护。 光致抗蚀剂能够产生对单次曝光的混合响应。 图案形成方法利用混合响应在光致抗蚀剂层中形成图案化结构。 本发明的光致抗蚀剂组合物和图案形成方法可用于打印具有精确图像控制的特征,特别是小尺寸的空间。

    PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
    67.
    发明申请
    PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 审中-公开
    用于负面发展的光电组合物及其使用的图案形成方法

    公开(公告)号:US20120122031A1

    公开(公告)日:2012-05-17

    申请号:US12946232

    申请日:2010-11-15

    IPC分类号: G03F7/004 G03F7/20

    CPC分类号: G03F7/325 G03F7/0397

    摘要: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

    摘要翻译: 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧链酸不稳定部分的第一单体单元和包含反应性醚部分,异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域,以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm(ArF)光刻在半导体衬底上形成材料图案特别有用。

    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME
    68.
    发明申请
    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
    芳香无氟光纤发生器和含有它的光电组合物

    公开(公告)号:US20090181319A1

    公开(公告)日:2009-07-16

    申请号:US12015041

    申请日:2008-01-16

    IPC分类号: G03F7/004 G03F7/26 C07C317/14

    摘要: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.

    摘要翻译: 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分,更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物对于使用193nm(ArF)成像辐射形成材料图案特别有用。

    IONIC, ORGANIC PHOTOACID GENERATORS FOR DUV, MUV AND OPTICAL LITHOGRAPHY BASED ON PERACEPTOR-SUBSTITUTED AROMATIC ANIONS
    69.
    发明申请
    IONIC, ORGANIC PHOTOACID GENERATORS FOR DUV, MUV AND OPTICAL LITHOGRAPHY BASED ON PERACEPTOR-SUBSTITUTED AROMATIC ANIONS 有权
    IONIC,有机光电发生器,用于DUV,MUV和光学层析,基于接触 - 取代的芳香族阴离子

    公开(公告)号:US20090176173A1

    公开(公告)日:2009-07-09

    申请号:US11970731

    申请日:2008-01-08

    IPC分类号: C07C255/46 G03F7/00

    CPC分类号: G03F7/0045 G03F7/0392

    摘要: A photoacid generator compound P+A−, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A− comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron-withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention.

    摘要翻译: 光致酸发生剂化合物P + A-包含天线组P +,其包含在与光相互作用时产生质子的阳离子,以及A-包含不含氟或半金属元素如硼的弱配位的受体取代的芳族阴离子 。 在一个实施方案中,这种阴离子包含以下化合物4,5,6和7,其中E包括吸电子基团,并且去除一个质子产生芳香性。 P +包含在与光子相互作用时分解成质子和其它成分的鎓阳离子。 P +可以包含有机硫族元素鎓阳离子或卤鎓阳离子,其中在另一个实施方案中的硫属离子阳离子可以包含氧鎓,锍,硒,碲或鎓阳离子,卤鎓阳离子可以包含碘鎓,氯或溴鎓阳离子 。 一种新型化合物包括TPS CN5。 光刻制剂包括与诸如光刻聚合物的光刻组合物组合的光酸产生剂。 当在基板上暴露于光学平版照射或ArF(193nm)或KrF(248nm)辐射时,该制剂开发。 产品包括通过本发明的方法制造的制品。

    Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer
    70.
    发明申请
    Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer 审中-公开
    洗涤剂组合物含有增泡助表面活性剂和泡沫稳定表面活性聚合物

    公开(公告)号:US20090023625A1

    公开(公告)日:2009-01-22

    申请号:US12214874

    申请日:2008-06-23

    IPC分类号: C11D7/42 C11D3/34

    摘要: A detergent composition having improved sudsing profile comprising 0.2% to 6% by weight of a suds boosting co-surfactant having the formula R—O—(CH2CH2O)nSO3−M+, wherein R is a branched or unbranched alkyl group having 8 to 16 carbon atoms, n is an integer from 0 to 3, M is a cation of alkali metal, alkaline earth metal or ammonium; 0.01% to 5% by weight of a surface active polymer having the properties: (i) the surface tension of a 39 ppm polymer solution in distilled water is from 40 mN/m to 65 mN/m as measured at 25° C. by a tensiometer; and (ii) the viscosity of a 500 ppm polymer solution in distilled water is from 0.0009 to 0.003 Pa·S as measured at 25° C. by a rheometer; and 6% to 15% by weight of a main surfactant system. The total surfactant level in the detergent composition is less than 20% and the phosphate and/or aluminosilicate builder level in the detergent composition is less than 15% by weight.

    摘要翻译: 具有改善的起泡曲线的洗涤剂组合物,其包含0.2重量%至6重量%的具有式RO-(CH 2 CH 2 O)n SO 3 -M +的增泡助剂,其中R是具有8至16个碳原子的支链或非支链烷基, n为0〜3的整数,M为碱金属,碱土金属或铵的阳离子; 0.01重量%至5重量%的表面活性聚合物具有以下性质:(i)在25℃下测定的39ppm聚合物溶液在蒸馏水中的表面张力为40mN / m至65mN / m,由 张力计 和(ii)在25℃下用流变仪测得的500ppm聚合物溶液在蒸馏水中的粘度为0.0009至0.003Pa.S; 和6重量%至15重量%的主表面活性剂体系。 洗涤剂组合物中的总表面活性剂含量小于20%,洗涤剂组合物中的磷酸盐和/或硅铝酸盐助洗剂水平小于15重量%。