公开(公告)号：US20160042921A1

公开(公告)日：2016-02-11

申请号：US14887106

申请日：2015-10-19

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh

IPC: H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/32834

Abstract: A plasma processing system for processing semiconductor substrates is provided. The plasma processing system includes a plasma processing volume having a volume less than the processing chamber. The plasma processing volume is defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate. The conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

Abstract translation: 提供一种用于处理半导体衬底的等离子体处理系统 等离子体处理系统包括具有小于处理室的体积的等离子体处理体积。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体约束结构限定。 电导控制结构可移动地设置在靠近所述至少一个出口端口处并且能够控制通过所述至少一个出口端口的出口流在第一流量和第二流量之间。 电导控制结构控制出口流量，并且至少一个RF源被调制，并且至少一个处理气体流量被对应于等离子体处理期间由控制器设置的所选择的处理状态被调制。

公开(公告)号：US09224583B2

公开(公告)日：2015-12-29

申请号：US13853915

申请日：2013-03-29

Applicant: Lam Research Corporation

Inventor： Henry Povolny ,  Rajinder Dhindsa

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/46 ,  C23C16/458

CPC classification number: H01J37/32715 ,  C23C16/4586 ,  C23C16/46 ,  G02B6/4296 ,  H01J37/32733 ,  H01J37/32935

Abstract: A substrate support apparatus for a plasma processing system includes a layer of dielectric material having a top surface and a bottom surface. The top surface is defined to support a substrate in exposure to a plasma. The substrate support apparatus also includes a number of optical fibers each having a first end and a second end. The first end of each optical fiber is defined to receive photons from a photon source. The second end of each optical fiber is oriented to project photons received from the photon source onto the bottom surface of the layer of dielectric material.

Abstract translation: 用于等离子体处理系统的衬底支撑装置包括具有顶表面和底表面的电介质材料层。 顶表面限定为在暴露于等离子体时支撑基底。 基板支撑装置还包括多个光纤，每个光纤具有第一端和第二端。 每个光纤的第一端被定义为从光子源接收光子。 每个光纤的第二端被定向成将从光子源接收的光子投射到电介质材料层的底表面上。

公开(公告)号：US09184029B2

公开(公告)日：2015-11-10

申请号：US14016994

申请日：2013-09-03

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh

IPC: G01L21/30 ,  H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/32834

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 导电控制结构可移动地设置在靠近所述至少一个出口端口处并且能够控制通过所述至少一个出口端口的出口流在第一流量和第二流量之间，其中所述电导控制结构控制所述出口流量 并且至少一个RF源被调制，并且至少一个处理气体流量是在等离子体处理期间由控制器设定的选择的处理状态调制的。

公开(公告)号：US20150206775A1

公开(公告)日：2015-07-23

申请号：US14676711

申请日：2015-04-01

Applicant: Lam Research Corporation

Inventor： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Abstract translation: 用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。 该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。 该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。 该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

公开(公告)号：US08975817B2

公开(公告)日：2015-03-10

申请号：US13653923

申请日：2012-10-17

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32449

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。

公开(公告)号：US20150053644A1

公开(公告)日：2015-02-26

申请号：US14531984

申请日：2014-11-03

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

IPC: H01J37/32

Abstract: Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

Abstract translation: 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

公开(公告)号：US20140034609A1

公开(公告)日：2014-02-06

申请号：US14046873

申请日：2013-10-04

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa

IPC: C23F1/08

CPC classification number: H01L21/67069 ,  C23F1/08 ,  G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67248

Abstract: A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

Abstract translation: 确定在等离子体工艺期间施加的时间依赖衬底温度。 基于在给定时间的等离子体成分的粘附系数的控制来确定任何给定时间的时间依赖衬底温度。 还确定了在等离子体处理期间施加的上等离子体边界和衬底之间的时间依赖性温差。 在给定时间内，基于对基板的等离子体成分的通量的控制来确定任何给定时间的随时间变化的温度差。 时间依赖衬底温度和随时间变化的温差存储在数字格式中，适用于被定义并连接到上等离子体边界和衬底的直接温度控制的温度控制装置。 还提供了一种用于在等离子体处理期间实现上等离子体边界和衬底温度控制的系统。

公开(公告)号：US20130065396A1

公开(公告)日：2013-03-14

申请号：US13671177

申请日：2012-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Rajinder Dhindsa ,  Eric Lenz

IPC: H01L21/306

CPC classification number: H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Abstract translation: 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

公开(公告)号：US11670486B2

公开(公告)日：2023-06-06

申请号：US16832907

申请日：2020-03-27

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32825 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

公开(公告)号：US20220254614A1

公开(公告)日：2022-08-11

申请号：US17729967

申请日：2022-04-26

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Akira Koshiishi ,  Alexei Marakhatanov

IPC: H01J37/32

Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.