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公开(公告)号：US09324945B2
公开(公告)日：2016-04-26
申请号：US13959958
申请日：2013-08-06
Applicant: Micron Technology, Inc.
Inventor： Lequn Jennifer Liu , Stephen W. Russell , Fabio Pellizzer , Swapnil Lengade
CPC classification number: H01L45/165 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1675
Abstract: A method of forming a memory cell includes forming an outer electrode material elevationally over and directly against a programmable material. The programmable material and the outer electrode material contact one another along an interface. Protective material is formed elevationally over the outer electrode material. Dopant is implanted through the protective material into the outer electrode material and the programmable material and across the interface to enhance adhesion of the outer electrode material and the programmable material relative one another across the interface. Memory cells are also disclosed.
Abstract translation: 一种形成存储单元的方法包括在外部电极材料上形成并且直接抵靠可编程材料。 可编程材料和外部电极材料沿着界面彼此接触。 保护材料在外部电极材料上垂直地形成。 通过保护材料将掺杂剂注入到外部电极材料和可编程材料中并跨越界面，以增强外部电极材料和可编程材料相对于界面的粘合性。 还公开了存储单元。
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公开(公告)号：US09245927B2
公开(公告)日：2016-01-26
申请号：US14490395
申请日：2014-09-18
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Cinzia Perrone
CPC classification number: H01L27/2463 , H01L27/2409 , H01L27/2445 , H01L29/02 , H01L45/06 , H01L45/12 , H01L45/124 , H01L45/141 , H01L45/144 , H01L45/145 , H01L45/1666 , H01L45/1691
Abstract: Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
Abstract translation: 一些实施例包括直接在间隔开的节点上的具有氧敏感结构的结构。 每个氧敏感结构包括具有沿节点顶表面的水平部分和从水平部分向上延伸的非水平部分的倾斜板。 每个倾斜板具有内侧壁，其中在非水平部分和水平部分之间形成内角，与侧壁相对的外侧壁和侧边缘。 位线在氧敏感结构之上，并且具有从氧敏感结构的侧边缘向上延伸的侧壁。 非含氧结构沿着内侧壁，沿着外侧壁沿着横向边缘，位线以及沿着位线的侧壁沿着内侧。 一些实施例包括存储器阵列和形成存储器单元的方法。
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公开(公告)号：US20160012888A1
公开(公告)日：2016-01-14
申请号：US14328536
申请日：2014-07-10
Applicant: Micron Technology, Inc.
Inventor： Agostino Pirovano , Fabio Pellizzer , Anna Maria Conti , Davide Fugazza , Johannes A. Kalb
IPC: G11C13/00
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0083 , G11C2013/0092
Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.
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64.发明授权公开(公告)号：US09231103B2
公开(公告)日：2016-01-05
申请号：US14277150
申请日：2014-05-14
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Agostino Pirovano
CPC classification number: H01L29/7827 , G11C13/0004 , H01L27/2454 , H01L29/42392 , H01L29/665 , H01L29/66666 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
Abstract: A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.
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公开(公告)号：US08988926B2
公开(公告)日：2015-03-24
申请号：US13739387
申请日：2013-01-11
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Innocenzo Tortorelli , Andrea Ghetti
CPC classification number: H01L45/1253 , G11C13/0004 , H01L27/2445 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/124 , H01L45/144 , H01L45/16 , H01L45/1691
Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.
Abstract translation: 本文公开的实施例可涉及形成相对于相变材料的非晶部分包括相变材料和分路的存储部件。
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Patent Agency Ranking
66.发明授权Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact 有权相变存储器开关壁单元的方法，系统和装置，具有大致水平的电极接触公开(公告)号：US08976570B2
公开(公告)日：2015-03-10
申请号：US14094532
申请日：2013-12-02
Applicant: Micron Technology, Inc.
Inventor： Fabio Pellizzer , Innocenzo Tortorelli
CPC classification number: H01L45/1253 , G11C13/0004 , G11C13/003 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141
Abstract: Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.
Abstract translation: 本文公开的实施例可以包括在介电材料中的和/或沟槽中沉积存储部件材料，包括在沟槽的大致竖直的壁上和沟槽的底部沉积存储部件材料。 实施例还可以包括蚀刻存储部件材料，使得存储部件材料的至少一部分保留在大致垂直的壁和沟槽的底部上，其中沟槽与电极和选择器接触，使得存储部件材料 沟槽底部接触电极。
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公开(公告)号：US20140198565A1
公开(公告)日：2014-07-17
申请号：US13739387
申请日：2013-01-11
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Fabio Pellizzer , Innocenzo Tortorelli , Andrea Ghetti
CPC classification number: H01L45/1253 , G11C13/0004 , H01L27/2445 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/124 , H01L45/144 , H01L45/16 , H01L45/1691
Abstract: Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the phase change material.
Abstract translation: 本文公开的实施例可涉及形成相对于相变材料的非晶部分包括相变材料和分路的存储部件。
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公开(公告)号：US20140147965A1
公开(公告)日：2014-05-29
申请号：US14167122
申请日：2014-01-29
Applicant: Micron Technology, Inc.
Inventor： Guy C. Wicker , Fabio Pellizzer , Enrico Varesi , Agostino Pirovano
IPC: H01L45/00
CPC classification number: G11C13/0004 , G11C13/003 , G11C2213/76 , H01L27/2427 , H01L45/04 , H01L45/06 , H01L45/065 , H01L45/122 , H01L45/1246 , H01L45/126 , H01L45/141 , H01L45/144 , H01L45/1608 , H01L45/1675
Abstract: A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.
Abstract translation: 相变存储器可以由两个相互垂直间隔的相变材料层形成。 中间电介质可以沿着它们的横向范围的大部分将层彼此间隔开。 可以在介电介质中提供开口，以允许相变层更接近彼此。 结果，在这个位置可能增加电流密度，产生加热。
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69.发明申请METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL WITH APPROXIMATELY HORIZONTAL ELECTRODE CONTACT 有权用于相位变化的存储器开关壁电路的方法，系统和装置具有大量水平电极接触公开(公告)号：US20140085974A1
公开(公告)日：2014-03-27
申请号：US14094532
申请日：2013-12-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Fabio Pellizzer , Innocenzo Tortorelli
CPC classification number: H01L45/1253 , G11C13/0004 , G11C13/003 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141
Abstract: Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.
Abstract translation: 本文公开的实施例可以包括在介电材料中的和/或沟槽中沉积存储部件材料，包括在沟槽的大致竖直的壁上和沟槽的底部沉积存储部件材料。 实施例还可以包括蚀刻存储部件材料，使得存储部件材料的至少一部分保留在大致垂直的壁和沟槽的底部上，其中沟槽与电极和选择器接触，使得存储部件材料 沟槽底部接触电极。
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公开(公告)号：US20140085973A1
公开(公告)日：2014-03-27
申请号：US13624627
申请日：2012-09-21
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Fabio Pellizzer , Antonino Rigano , Marcello Mariani , Augusto Benvenuti
IPC: H01L21/768 , H01L27/24 , G11C11/00 , H01L21/762
CPC classification number: H01L27/2445 , G11C13/0004 , H01L21/3086 , H01L21/762 , H01L27/2463 , H01L29/42304 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/16 , H01L45/1675
Abstract: Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device.
Abstract translation: 本文公开的实施例可以涉及在存储器件中形成用于选择器晶体管和字线电极之间的互连的接触区域。
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