摘要:
A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要:
A base material for mounting electronic components is provided which has a low density and a coefficient of thermal expansion close to that of aluminum and can be processed with ease. The base material essentially consists of aluminum or an aluminum alloy reinforced with carbon fibers with a volume fraction ranging from 0.15 to 0.55, the carbon fibers in the base material being arranged at random on a surface for mounting an electronic component and being arranged in layer in a direction vertical to the above-described surface.
摘要:
An FIT or IT solid-state imaging device comprising a p-type Si substrate in which n-type regions forming storage diode portions, signal read-out portions, n-type CCD channels, and p.sup.+ -type element isolating regions are formed, a solid-state imaging element chip on the top of the substrate in which pixel electrodes are formed, a photo-conductive film stacked above the solid-state imaging element chip, and a transparent electrode formed above the photo-conductive film, wherein a drain for charge injection is further provided in or at one end of the pixel region of the substrate, the potential of the storage diode portion is set to a value almost equal to the potential of the element isolating region immediately before the accumulation of the signal charge, by injecting a specified amount of charge from the drain into the storage diode portion, and during the accumulation of the signal charge, the potential applied to the transparent electrode is set to a value higher than the potential of the storage diode portion set immediately before the accumulation of the signal charge, and the potential of the storage diode portion is made close to the potential of the element isolating layer and the substrate in the vicinity particularly in a case where the amount of incident light is small so that variations in dark current are conspicuous, by injecting holes of the carriers generated by the incident light in the photo-conductive film into the storage diode portion.
摘要:
According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.
摘要:
A plurality of image pickup areas is disposed in a semiconductor substrate so as to be separate from one another. Disposed in each of the image pickup areas are rows and columns of unit pixels, each of which includes a photoelectric conversion part and signal scanning circuit parts. Formed on the image pickup areas of the semiconductor substrate and opposite a interconnect layer formed on the semiconductor substrate are optical image formation lenses used for forming object images. Further, between the image pickup areas on the semiconductor substrate is a driving circuit area in which driving circuits are formed for driving the signal scanning circuit parts.
摘要:
According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.
摘要:
A method includes a pixel-value correction step that causes an average and variance of pixel values in a second subregion inclusive of a first subregion inclusive of being formed of only one pixel in a comparison image resolved into pixels to match with an average and variance of pixel values in a subregion corresponding to the second subregion on a reference image similarly resolved into pixels, thereby to execute calculation that corrects the pixel value of each pixel in the first subregion in the comparison image by recognizing each of subregions to be the first subregion, the subregions being obtained when the comparison image is divided into the subregions respectively inclusive of being formed of only one pixel; and a change determination step that determines the presence/absence of a change in the object by comparing the reference image with a post-correction comparison image acquired through the pixel value correction step.
摘要:
There are provided a photosetting type bio-based coating composition and its coated article, wherein the coating composition has a sufficient hydrolysis resistance and a sufficient crosslinking density so as to be excellent in such as long-term stability, and is inexpensive, and is applicable also to an aqueous solvent. The photosetting type bio-based coating composition according to the present invention is characterized by comprising: a bio-based photopolymerizable compound as a film-forming ingredient which compound has at least one lactic acid unit and at least one photopolymerizable group together in a molecule; and a photopolymerization initiator. The coated article according to the present invention is characterized by being obtained by being coated with the aforementioned coating composition.
摘要:
A method includes a pixel-value correction step that causes an average and variance of pixel values in a second subregion inclusive of a first subregion inclusive of being formed of only one pixel in a comparison image resolved into pixels to match with an average and variance of pixel values in a subregion corresponding to the second subregion on a reference image similarly resolved into pixels, thereby to execute calculation that corrects the pixel value of each pixel in the first subregion in the comparison image by recognizing each of subregions to be the first subregion, the subregions being obtained when the comparison image is divided into the subregions respectively inclusive of being formed of only one pixel; and a change determination step that determines the presence/absence of a change in the object by comparing the reference image with a post-correction comparison image acquired through the pixel value correction step.
摘要:
A discharge lamp includes a glass bulb and a pair of electrodes provided at both ends of the glass bulb. At least one of the electrodes is an external electrode formed on an outer surface of the glass bulb as a thin layer whose maximum thickness is 70 μm or less, and an end portion of the external electrode becomes smaller in thickness towards an end of the external electrode.