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公开(公告)号：US10028390B2
公开(公告)日：2018-07-17
申请号：US14872910
申请日：2015-10-01
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H01L21/50 , H01L21/56 , H01L23/48 , H05K3/30 , H05K3/28 , H01F27/24 , H01L23/31 , H01L23/36 , H01L23/373 , H01L23/498 , H05K3/46 , H05K1/18
Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.
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公开(公告)号：US10008431B2
公开(公告)日：2018-06-26
申请号：US14885202
申请日：2015-10-16
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , Julio C. Costa , Baker Scott , George Maxim
IPC: H01L23/29 , H01L23/31 , H01L21/304 , H01L21/02 , H01L21/683 , H01L23/373 , H01L23/00 , H05K1/02 , H05K1/18 , H01Q1/50 , H01L23/36 , H01L21/56 , H01L23/20 , H01L23/367 , H01L21/306 , H01L23/522 , H01L49/02
Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.
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公开(公告)号：US09942991B2
公开(公告)日：2018-04-10
申请号：US14872910
申请日：2015-10-01
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H01L21/50 , H01L21/56 , H01L23/48 , H05K3/30 , H05K3/28 , H01F27/24 , H01L23/31 , H01L23/36 , H01L23/373 , H01L23/498 , H05K3/46 , H05K1/18
Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.
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公开(公告)号：US09871499B2
公开(公告)日：2018-01-16
申请号：US14554943
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H03H7/0161 , H01F17/0013 , H03F1/565 , H03F3/245 , H03F2200/546 , H03H7/0115 , H03H7/1708 , H03H7/1716 , H03H7/1766 , H03H7/1775 , H03H7/40 , H03H2007/386
Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.
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公开(公告)号：US09859863B2
公开(公告)日：2018-01-02
申请号：US14554975
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H03H7/0161 , H01F17/0013 , H03F3/195 , H03F3/245 , H03F3/68 , H03F2200/168 , H03F2200/546 , H03H7/0115 , H03H7/0153 , H03H7/09 , H03H7/463
Abstract: Radio frequency (RF) front-end circuitry that includes control circuitry and an RF filter structure that includes a plurality of resonators are disclosed. In one embodiment, a first tunable RF filter path is defined by a first set of the plurality of resonators such that the first tunable RF filter path has a first amplitude and a first phase. A second tunable RF filter path is defined by a second set of the plurality of resonators such that the second tunable RF filter path has a second amplitude and a second phase. To provide antenna diversity and/or beam forming/beam steering, the control circuitry is configured to set a first amplitude difference between the first amplitude and the second amplitude to approximately a first target amplitude difference and set a first phase difference between the first phase and the second phase to approximately a first target phase difference.
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Patent Agency Ranking
公开(公告)号：US09825656B2
公开(公告)日：2017-11-21
申请号：US14450204
申请日：2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Dirk Robert Walter Leipold , Baker Scott
IPC: H04B1/04 , H03F3/24 , H04B1/16 , H03F3/19 , H03F1/56 , H03F3/193 , H03F3/68 , H03F3/72 , H03H7/09 , H03H7/01
CPC classification number: H04B1/0475 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/451 , H03F2203/7209 , H03H7/09 , H03H7/1775 , H03H2210/025 , H04B1/0458
Abstract: RF communications circuitry, which includes a first tunable RF filter and an RF power amplifier (PA), is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The RF PA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.
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公开(公告)号：US09824951B2
公开(公告)日：2017-11-21
申请号：US14851652
申请日：2015-09-11
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , Julio C. Costa , Baker Scott
IPC: H01L23/31 , H01L21/02 , H01L21/3105 , H01L21/311 , H01L21/56 , H01L21/683 , H01L21/762 , H01L23/29 , H01L23/367 , H01L23/373
CPC classification number: H01L23/3135 , H01L21/0217 , H01L21/31055 , H01L21/31111 , H01L21/568 , H01L21/6835 , H01L21/762 , H01L21/76264 , H01L23/291 , H01L23/293 , H01L23/3128 , H01L23/367 , H01L23/3737 , H01L2221/68327 , H01L2221/68381 , H01L2224/16238 , H01L2224/73253 , H01L2224/81801 , H01L2224/97 , H01L2924/15174 , H01L2924/15313 , H01L2924/18161 , H01L2224/81 , H01L2924/00014
Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.
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公开(公告)号：US09787270B2
公开(公告)日：2017-10-10
申请号：US14554681
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： Baker Scott , George Maxim , Dirk Robert Walter Leipold
IPC: H03F1/52 , H03G3/30 , H03F1/02 , H03F3/19 , H04B1/04 , H03F1/32 , H03F3/68 , H03F1/22 , H03F1/56 , H03F3/45 , H03F3/193
CPC classification number: H03G3/3036 , H03F1/0211 , H03F1/0272 , H03F1/223 , H03F1/32 , H03F1/523 , H03F1/565 , H03F3/19 , H03F3/193 , H03F3/24 , H03F3/45179 , H03F3/45394 , H03F3/68 , H03F2200/324 , H03F2200/387 , H03F2200/451 , H03F2200/471 , H03F2201/3236 , H03G3/3042 , H04B1/0475 , H04B2001/0408 , H04B2001/0416 , H04B2001/0425
Abstract: A power amplifier includes an amplifier element and overstress management circuitry coupled to the amplifier element. The overstress management circuitry is configured to detect an overstress condition of the amplifier element and adjust one or more operating parameters of the amplifier element in response to the detection of an overstress condition of the amplifier element. Using the overstress management circuitry prevents damage to the amplifier element that may occur due to uncorrected overstress conditions which may degrade or destroy a gate oxide of the amplifier element. Accordingly, the longevity of the amplifier element is improved.
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公开(公告)号：US09774311B2
公开(公告)日：2017-09-26
申请号：US14555371
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Baker Scott , Dirk Robert Walter Leipold
CPC classification number: H03H7/0161 , H01F17/0013 , H03F1/56 , H03F3/195 , H03F3/245 , H03F3/68 , H03F2200/111 , H03F2200/294 , H03F2200/387 , H03F2200/411 , H03F2200/429 , H03F2200/546 , H03H7/0115 , H03H7/0153 , H03H7/09 , H03H7/463
Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.
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公开(公告)号：US09742374B2
公开(公告)日：2017-08-22
申请号：US14555371
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Baker Scott , Dirk Robert Walter Leipold
Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.
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