公开(公告)号：US10741694B2

公开(公告)日：2020-08-11

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US10516008B2

公开(公告)日：2019-12-24

申请号：US15076927

申请日：2016-03-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Tetsuji Ishitani ,  Kenichi Okazaki ,  Hajime Kimura

IPC: H01L27/32 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G02F1/1333 ,  H01L29/786

Abstract: A novel display panel that can be used as a reflective display panel in an environment with strong external light and as a self-luminous display panel in a dim environment, for example and that has low power consumption and is highly convenient or reliable is provided. The display panel includes a pixel and a substrate that supports the pixel. The pixel includes a first display element (e.g., a reflective liquid crystal element) that includes a reflective film having an opening as a first conductive film and a second display element (e.g., an organic EL element) that emits light to the opening.

公开(公告)号：US10483295B2

公开(公告)日：2019-11-19

申请号：US15865567

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka

IPC: H01L27/12

Abstract: An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm.

公开(公告)号：US10475819B2

公开(公告)日：2019-11-12

申请号：US16039869

申请日：2018-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kenichi Okazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda

IPC: G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

公开(公告)号：US10453927B2

公开(公告)日：2019-10-22

申请号：US15874227

申请日：2018-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Takashi Hamochi ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/24

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

公开(公告)号：US10381486B2

公开(公告)日：2019-08-13

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Naoto Goto

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66 ,  G06F3/044 ,  C23C14/08 ,  C23C14/34

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US10236306B2

公开(公告)日：2019-03-19

申请号：US15963141

申请日：2018-04-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US10217796B2

公开(公告)日：2019-02-26

申请号：US15594813

申请日：2017-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

IPC: H01L27/12 ,  H01L27/24 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/105 ,  H01L29/24 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US20190051727A1

公开(公告)日：2019-02-14

申请号：US16152850

申请日：2018-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L27/12 ,  C04B35/622 ,  H01L29/786 ,  H01L29/778 ,  C23C14/58 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C04B35/453

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US20190019894A1

公开(公告)日：2019-01-17

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/45 ,  H01L23/31 ,  H01L29/04 ,  H01L21/385 ,  H01L29/49 ,  H01L29/24 ,  H01L29/66

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.