公开(公告)号：US09461212B2

公开(公告)日：2016-10-04

申请号：US14752413

申请日：2015-06-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

Abstract translation: LED被提供以包括：第一导电类型半导体层; 位于所述第一导电类型半导体层上方的有源层; 位于有源层上的第二导电类型半导体层; 以及缺陷阻挡层，其包括覆盖所述第二导电半导体层的顶表面的至少一部分的掩模区域和用于部分地暴露所述第二导电类型半导体层的顶表面的开口区域，其中所述有源层和所述第二导电类型半导体层 导电型半导体层被设置为暴露第一导电类型半导体层的一部分，并且其中缺陷阻挡层包括围绕第一区域的第一区域和第二区域，以及开口区域的面积与面积的比率 在第一区域中的掩模区域与第二区域中的开口区域的面积与掩蔽区域的面积的比率不同。

公开(公告)号：US09356198B2

公开(公告)日：2016-05-31

申请号：US14807290

申请日：2015-07-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Chung Hoon Lee ,  Daewoong Suh ,  Jong Min Jang ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Hyun A Kim ,  Seon Min Bae

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00 ,  H01L33/44 ,  H01L33/20 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.

公开(公告)号：US09343627B2

公开(公告)日：2016-05-17

申请号：US14495771

申请日：2014-09-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

IPC: H01L33/36 ,  H01L33/44 ,  H01L33/08 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

Abstract translation: 公开了一种LED和LED模块。 LED包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上并包括有源层和第二导电类型半导体层的台面; 与第一导电类型半导体层接触的第一欧姆接触结构; 与第二导电类型半导体层接触的第二欧姆接触结构; 至少部分地覆盖台面和第一导电类型半导体层的下绝缘层，并设置成形成至少部分地暴露第一欧姆接触结构的第一开口部分和至少部分地暴露第二欧姆接触结构的第二开口部分 ; 以及电流分布层，其连接到所述第一欧姆接触结构，所述电流分布层至少部分地被所述第一开口部暴露并且被布置成形成至少部分地暴露所述第二开口部的第三开口部。

公开(公告)号：US09293660B2

公开(公告)日：2016-03-22

申请号：US14585125

申请日：2014-12-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Abstract translation: 提供了一种发光二极管（LED）及其制造方法，其中围绕反射金属层的导电阻挡层由保护绝缘层限定。 在其中形成第一半导体层，有源层和第二半导体层的发射结构上形成包括反射金属层和导电阻挡层的反射图案。 导电阻挡层防止反射金属层的扩散，并延伸到在形成过程期间凹陷在具有突出结构的光致抗蚀剂图案下的保护绝缘层。 因此，防止导电阻挡层与具有过悬挂结构和反射金属层形成点的光致抗蚀剂图案的侧壁接触的现象。 因此，可以制造具有各种形状的LED模块。

公开(公告)号：US20150069444A1

公开(公告)日：2015-03-12

申请号：US14481351

申请日：2014-09-09

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Jong Min Jang ,  Joon Sup Lee ,  Won Young Roh ,  Daewoong Suh ,  Hyun A Kim ,  Yu Dae Han ,  Min Woo Kang ,  Seon Min Bae

IPC: H01L33/60 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L27/153

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including a substrate, a semiconductor layer formed on one surface of the substrate, and an anti-reflection element formed on the other surface of the substrate and including a nano-pattern. The anti-reflection element is interposed between the substrate and air.

Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括基板，形成在所述基板的一个表面上的半导体层，以及形成在所述基板的另一表面上的防反射元件， 模式。 防反射元件插入在基板和空气之间。