公开(公告)号：US20160014304A1

公开(公告)日：2016-01-14

申请号：US14864169

申请日：2015-09-24

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H04N3/14 ,  H04N5/378 ,  H04N5/374 ,  H04N5/335

CPC classification number: H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等。

公开(公告)号：US20150303234A1

公开(公告)日：2015-10-22

申请号：US14790909

申请日：2015-07-02

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14638 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/363 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections that receive a charge from the photoelectric conversion section through the transfer transistor, a reset transistor that resets the floating diffusion sections, a separating transistor that performs on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor that outputs a signal corresponding to a potential of the floating diffusion sections.

Abstract translation: 一种固态成像装置，包括其中排列有多个像素的像素区域。 像素各自包括光电转换部，转移晶体管，通过转移晶体管接收来自光电转换部的电荷的多个浮动扩散部，复位浮置扩散部的复位晶体管， 关闭控制多个浮动扩散部分之间的连接，以及放大晶体管，其输出与浮动扩散部分的电位相对应的信号。

公开(公告)号：US09117728B2

公开(公告)日：2015-08-25

申请号：US14272335

申请日：2014-05-07

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Keiji Mabuchi

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

Abstract translation: 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。

公开(公告)号：US20150155325A1

公开(公告)日：2015-06-04

申请号：US14615253

申请日：2015-02-05

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/379 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。

公开(公告)号：US09029925B2

公开(公告)日：2015-05-12

申请号：US14087295

申请日：2013-11-22

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Toshifumi Wakano ,  Ken Koseki

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/365 ,  H04N5/378

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/3741 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract translation: 一种固态成像装置，其中在像素具有操作周期之前获得的信号线的电位固定在第一电源电位和第二电源电位之间的中间电位。

公开(公告)号：US08988575B2

公开(公告)日：2015-03-24

申请号：US14109446

申请日：2013-12-17

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/374 ,  H01L23/00 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。

公开(公告)号：US20140327802A1

公开(公告)日：2014-11-06

申请号：US14371615

申请日：2013-01-11

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/363

CPC classification number: H04N5/3559 ,  H01L27/14643 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/37452

Abstract: A pixel includes detection portions which detect transferred charges, a reset portion which resets the plurality of detection portions, a connection/separation control portion which controls connection and separation of the detection portions, and an output portion which outputs a signal corresponding to the potential of a detection portion. In a state where the connection/separation control portion connects the detection portions, the output portion outputs a connection-state reset level signal and a connection-state output signal and, in a state where the connection/separation control portion separates the detection portions, the output portion outputs a separation-state reset level signal and a separation-state output signal. A first pixel signal is generated by a difference between the connection-state reset level signal and the connection-state output signal, and a second pixel signal is generated by a difference between the separation-state reset level signal and the separation-state output signal.

Abstract translation: 像素包括检测传送的电荷的检测部分，复位多个检测部分的复位部分，控制检测部分的连接和分离的连接/分离控制部分，以及输出与电位相对应的信号的输出部分 检测部。 在连接/分离控制部分连接检测部分的状态下，输出部分输出连接状态复位电平信号和连接状态输出信号，并且在连接/分离控制部分分离检测部分的状态下， 输出部分输出分离状态复位电平信号和分离状态输出信号。 通过连接状态复位电平信号和连接状态输出信号之间的差产生第一像素信号，并且通过分离状态复位电平信号和分离状态输出信号之间的差产生第二像素信号 。

公开(公告)号：US08878959B2

公开(公告)日：2014-11-04

申请号：US14052316

申请日：2013-10-11

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/235 ,  H04N3/14 ,  H04N5/335 ,  H04N5/232 ,  H04N5/355 ,  H01L27/146

CPC classification number: H04N5/35563 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/23229 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/365 ,  H04N5/37213 ,  H04N5/3742 ,  H04N5/3765 ,  H04N5/378

Abstract: A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.

Abstract translation: 固态成像装置包括像素阵列部分和信号处理部分。 像素阵列部分被配置为包括多个排列的矩形像素，每个矩形像素在垂直和水平方向上具有不同的尺寸，并且其中多个相邻的矩形像素被组合以形成在垂直方向上具有相同尺寸的正方形像素 和水平方向。 信号处理部被配置为执行作为单个信号输出从组合的多个矩形像素读出的多个信号的处理。

公开(公告)号：US08749008B2

公开(公告)日：2014-06-10

申请号：US13928915

申请日：2013-06-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L31/0232

CPC classification number: H01L27/14605 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/035272 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract translation: 其中形成在半导体衬底的第一表面侧上的像素电路由多个光接收区域共享的半导体衬底的第二表面侧的固态成像器件是光接收区域的光入射侧。 光接收区域的第二表面侧区域以大致均匀的间隔布置，并且光​​接收区域e的第一表面侧区域以不均匀的间隔布置。 在半导体衬底中，相互的第二表面侧区域和第一表面侧区域接合，使得光接收区域从半导体衬底的第二表面侧延伸到第一表面侧。

公开(公告)号：US20140104471A1

公开(公告)日：2014-04-17

申请号：US14109446

申请日：2013-12-17

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Shunichi Urasaki

IPC: H04N5/374 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L24/14 ,  H01L24/17 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/335 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37457 ,  H01L2924/00 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract translation: 在背面照明型MOS（金属氧化物半导体）固体摄像器件32中，在布线层侧形成有微型焊盘34,37，以及形成在布线层上的具有微型焊盘35,38的信号处理芯片33 在与MOS固体摄像元件32的微垫34,37相对应的位置，通过微型凸块36,39连接。在包含MOS型固体摄像元件的半导体模块中，同时， 可以提高图像处理速度，可以实现图像内的同时性，并且可以提高图像质量，可以促进制造过程，并且可以提高成品率。 此外，当同时驱动所有像素或大量像素时，可以降低所需的功耗。