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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    61.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130045568A1

    公开(公告)日：2013-02-21

    申请号：US13654824

    申请日：2012-10-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kengo AKIMOTO

    IPC: H01L21/336

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78606

    Abstract: Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive, layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

    Abstract translation: 薄膜晶体管的电特性和可靠性受到杂质元素扩散到沟道区域的损害。 本发明提供一种薄膜晶体管，其中铝原子不可能扩散到氧化物半导体层。 包括铟，镓和锌的氧化物半导体层的薄膜晶体管包括源极或漏极电极层，其中以包含铝为主要成分的第一导电层和包括高熔点金属材料的第二导电层被堆叠。 氧化物半导体层113与包括氧化铝作为主要成分的第二导电层和阻挡层接触，从而抑制铝原子向氧化物半导体层的扩散。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    62.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20240371985A1

    公开(公告)日：2024-11-07

    申请号：US18776570

    申请日：2024-07-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

    IPC: H01L29/66 ,  H01L21/46 ,  H01L27/12 ,  H01L29/786

    Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

    IMAGING SYSTEM
    67.
    发明申请
    IMAGING SYSTEM 有权

    公开(公告)号：US20220417484A1

    公开(公告)日：2022-12-29

    申请号：US17779717

    申请日：2020-12-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kengo AKIMOTO ,  Seiko INOUE ,  Daichi MISHIMA

    IPC: H04N9/43 ,  H04N5/374 ,  H04N9/67 ,  H04N7/18 ,  G06T7/90

    Abstract: Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region.
    An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. As a selection standard for reducing the amount of learning data, in an HSV color space, saturation is used, and selection is performed so that the saturation has optimal distribution. When colorization disclosed in this specification is performed, the colorization and object highlight processing can be performed at the same time.

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    68.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220393035A1

    公开(公告)日：2022-12-08

    申请号：US17886643

    申请日：2022-08-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hajime KIMURA ,  Kengo AKIMOTO ,  Masashi TSUBUKU ,  Toshinari SASAKI

    IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

    Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

    AUTHENTICATION SYSTEM FOR ELECTRONIC DEVICE
    69.
    发明申请
    AUTHENTICATION SYSTEM FOR ELECTRONIC DEVICE 有权

    公开(公告)号：US20220237275A1

    公开(公告)日：2022-07-28

    申请号：US17615257

    申请日：2020-06-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shigeru TAMAKI ,  Kengo AKIMOTO ,  Hiromichi GODO ,  Koki INOUE ,  Yoshitaka DOZEN ,  Shunpei YAMAZAKI

    IPC: G06F21/32 ,  G06F21/60 ,  G06N20/00

    Abstract: An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

    DISPLAY DEVICE
    70.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20220231056A1

    公开(公告)日：2022-07-21

    申请号：US17717277

    申请日：2022-04-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/66

    Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

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