公开(公告)号：US10734529B2

公开(公告)日：2020-08-04

申请号：US16071770

申请日：2017-01-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Junichi Koezuka ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L27/146 ,  H01L27/108 ,  H01L29/66 ,  H01L27/15 ,  H01L29/45 ,  H01L27/12 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

公开(公告)号：US10546759B2

公开(公告)日：2020-01-28

申请号：US15584223

申请日：2017-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L21/28

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US10134852B2

公开(公告)日：2018-11-20

申请号：US13920442

申请日：2013-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Takashi Hamochi ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/78 ,  H01L21/16 ,  H01L29/24 ,  H01L21/47 ,  H01L21/00 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

公开(公告)号：US10128378B2

公开(公告)日：2018-11-13

申请号：US15822648

申请日：2017-11-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

公开(公告)号：US09991392B2

公开(公告)日：2018-06-05

申请号：US14550091

申请日：2014-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Takashi Hamochi ,  Satoshi Higano ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  G02F1/1368 ,  H01L23/532 ,  G02F1/1362 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53233 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.

公开(公告)号：US09831325B2

公开(公告)日：2017-11-28

申请号：US15204085

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/40

CPC classification number: H01L29/66969 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

公开(公告)号：US09577110B2

公开(公告)日：2017-02-21

申请号：US14582273

申请日：2014-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

Abstract translation: 提供了包括氧化物半导体的新型半导体器件。 特别地，提供了包括氧化物半导体的平面半导体器件。 提供包括氧化物半导体并具有大导通电流的半导体器件。 半导体器件包括氧化物绝缘膜，氧化物绝缘膜上的氧化物半导体膜，与氧化物半导体膜接触的源极和漏电极，源极和漏极之间的栅极绝缘膜，以及栅极 电极与氧化物半导体膜与栅极绝缘膜重叠。 氧化物半导体膜包括与栅电极重叠的第一区域和不与栅电极，源电极和漏电极重叠的第二区域。 第一区和第二区具有不同的杂质元素浓度。 栅电极，源电极和漏电极含有相同的金属元素。

公开(公告)号：US09320111B2

公开(公告)日：2016-04-19

申请号：US13900907

申请日：2013-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Shunpei Yamazaki

IPC: G09G3/10 ,  H05B37/02 ,  G09G3/32

CPC classification number: H05B37/02 ,  G09G3/3258 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045 ,  Y02B20/42

Abstract: A light-emitting device that is less influenced by variations in threshold voltage of a transistor is provided. Further, a light-emitting device in which variations in luminance due to variations in threshold voltage of a transistor can be reduced is provided. Further, influences due to variations in threshold voltage of a transistor are corrected in a short time. A light-emitting element, a transistor functioning as a switch supplying current to the light-emitting element, and a circuit in which threshold voltage of the transistor is obtained and voltage between a gate and a source (gate voltage) of the transistor is corrected in accordance with the obtained threshold voltage are included. An n-channel transistor in which threshold voltage changes in a positive direction and the amount of the change is small is used. When the threshold voltage of the transistor is obtained, the gate voltage of the transistor is adjusted as appropriate.

Abstract translation: 提供了较少受到晶体管的阈值电压变化影响的发光器件。 此外，提供了可以减少由于晶体管的阈值电压的变化引起的亮度变化的发光装置。 此外，由于晶体管的阈值电压的变化引起的影响在短时间内被校正。 发光元件，用作向发光元件提供电流的开关的晶体管和获得晶体管的阈值电压并且校正晶体管的栅极和源极（栅极电压）之间的电压的电路 根据获得的阈值电压。 使用其中阈值电压在正方向上变化并且变化量小的n沟道晶体管。 当获得晶体管的阈值电压时，适当调整晶体管的栅极电压。

公开(公告)号：US09159837B2

公开(公告)日：2015-10-13

申请号：US13875499

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

Abstract translation: 提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。 提供一种半导体器件，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的氧化物绝缘层，氧化物半导体层，其与氧化物绝缘层在上方并与其接触 栅极电极层以及与氧化物半导体层电连接的源极电极层和漏极电极层。 栅绝缘层包括含氮的硅膜。 氧化物绝缘层含有选自氧化物半导体层的构成元素的一种以上的金属元素。 栅极绝缘层的厚度大于氧化物绝缘层的厚度。

公开(公告)号：US20150171116A1

公开(公告)日：2015-06-18

申请号：US14567205

申请日：2014-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Takashi Hamochi ,  Yukinori Shima ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.

Abstract translation: 半导体器件包括：氧化物半导体膜，与氧化物半导体膜重叠的第一栅电极，氧化物半导体膜与第一栅电极之间的栅极绝缘膜，氧化物半导体膜上的第一绝缘膜，一对 在第一绝缘膜之上并电连接到氧化物半导体膜的电极，在第一绝缘膜和一对电极上的第二绝缘膜，以及位于第二绝缘膜之上并与氧化物重叠的第二栅电极 半导体膜。 第一绝缘膜包括厚度为1nm以上且50nm以下的区域，该一对电极包括电极间距离为1μm以上且6μm以下的区域。