公开(公告)号：US06861687B2

公开(公告)日：2005-03-01

申请号：US10345547

申请日：2003-01-15

申请人： Sheng Teng Hsu ,  Wei-Wei Zhuang

发明人： Sheng Teng Hsu ,  Wei-Wei Zhuang

IPC分类号： H01L27/115 ,  G11C11/15 ,  G11C11/56 ,  G11C13/00 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/24 ,  H01L43/08 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C2213/31 ,  G11C2213/77 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

摘要： Resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.

摘要翻译： 提供了电阻式交叉点存储器件以及制造和使用方法。 存储器件包括插在上电极和下电极之间的钙钛矿材料的有源层。 在上电极和下电极的交叉点处位于有源层内的位区域具有响应于施加一个或更多个电压脉冲而可以在值范围内变化的电阻率。 可以使用电压脉冲来增加比特区域的电阻率，降低比特区域的电阻率，或者确定比特区域的电阻率。 提供存储器电路以帮助编程和读出位区域。

公开(公告)号：US06759249B2

公开(公告)日：2004-07-06

申请号：US10072225

申请日：2002-02-07

申请人： Wei-Wei Zhuang ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Sheng Teng Hsu

IPC分类号： H01L2100

CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/31 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  Y10S502/525

摘要： A method of fabricating a variable resistance device, wherein the resistance is changed by passing a voltage of various pulse length through the device, includes preparing a silicon substrate; forming a silicon oxide layer on the substrate; depositing a first metal layer on the silicon oxide, wherein the metal of the first metal layer is taken from the group of metals consisting of platinum and iridium; depositing a perovskite metal oxide thin film on the first metal layer; depositing a second metal layer on the perovskite metal oxide, wherein the metal of the second metal layer is taken from the group of metals consisting of platinum and iridium; annealing the structure at a temperature of between about 400° C. to 700° C. for between about five minutes and three hours; and completing the variable resistance device. A variable resistance R-RAM device includes a silicon substrate having a silicon oxide layer thereon; a first metal layer formed on the silicon oxide layer, wherein the metal of the first metal layer is taken from the group of metals consisting of platinum and iridium; a perovskite metal oxide thin film layer formed on the first metal layer; a second metal layer formed on the perovskite metal oxide, wherein the metal of the second metal layer is taken from the group of metals consisting of platinum and iridium; and metallizing elements to provide a complete device.

摘要翻译： 一种制造可变电阻器件的方法，其中通过使各种脉冲长度的电压通过器件来改变电阻，包括制备硅衬底; 在所述基板上形成氧化硅层; 在所述氧化硅上沉积第一金属层，其中所述第一金属层的金属取自由铂和铱组成的金属组; 在第一金属层上沉积钙钛矿金属氧化物薄膜; 在所述钙钛矿金属氧化物上沉积第二金属层，其中所述第二金属层的金属取自由铂和铱组成的金属组; 在约400℃至700℃的温度下退火结构约5分钟至3小时; 并完成可变电阻装置。 可变电阻R-RAM器件包括其上具有氧化硅层的硅衬底; 形成在所述氧化硅层上的第一金属层，其中所述第一金属层的金属取自由铂和铱组成的金属组; 形成在所述第一金属层上的钙钛矿金属氧化物薄膜层; 形成在钙钛矿金属氧化物上的第二金属层，其中第二金属层的金属取自由铂和铱组成的金属组; 和金属化元件以提供完整的装置。

公开(公告)号：US06669870B2

公开(公告)日：2003-12-30

申请号：US09820024

申请日：2001-03-28

申请人： Wei-Wei Zhuang ,  Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01B102

CPC分类号： C23C16/18

摘要： A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cu（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。

公开(公告)号：US06664117B2

公开(公告)日：2003-12-16

申请号：US10256380

申请日：2002-09-26

申请人： Wei-Wei Zhuang ,  Sheng Teng Hsu ,  Jong-Jan Lee

发明人： Wei-Wei Zhuang ,  Sheng Teng Hsu ,  Jong-Jan Lee

IPC分类号： H01L2100

CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/31 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  Y10S502/525

摘要： A method of forming a multi-layered, spin-coated perovskite thin film on a wafer includes preparing a perovskite precursor solution including mixing solid precursor material into acetic acid forming a mixed solution; heating the mixed solution in air for between about one hour to six hours; and filtering the solution when cooled; placing a wafer in a spin-coating mechanism; spinning the wafer at a speed of between about 500 rpm to 3500 rpm; injecting the precursor solution onto the wafer surface; baking the coated wafer at a temperature of between about 100° C. to 300° C.; annealing the coated wafer at a temperature of between about 400° C. to 650° C. in an oxygen atmosphere for between about two minutes to ten minutes; repeating the spinning, injecting, baking and annealing steps until a perovskite thin film of desired thickness is obtained; and annealing the perovskite thin film at a temperature of between about 500° C. to 750° C. in an oxygen atmosphere for between about ten minutes to two hours.

公开(公告)号：US06596344B2

公开(公告)日：2003-07-22

申请号：US09820227

申请日：2001-03-27

申请人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： C23C1614

CPC分类号： H01L21/28556 ,  C23C16/18

摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

公开(公告)号：US06576292B2

公开(公告)日：2003-06-10

申请号：US09929709

申请日：2001-08-13

申请人： Wei-Wei Zhuang ,  David Russell Evans ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  David Russell Evans ,  Sheng Teng Hsu

IPC分类号： C23C1618

CPC分类号： C23C16/18 ,  C23C16/0281

摘要： A method of forming a highly adhesive copper thin film on a metal nitride substrate includes preparing a substrate having a metal nitride barrier layer formed on a portion thereof; heating the substrate in a chemical vapor deposition chamber to a temperature of between 160° C. to 250° C. for about one minute and simultaneously introducing a copper precursor into the reaction chamber at a very slow initial flow rate of between less than 0.1 ml/min, and simultaneously providing an initial high wet helium gas flow in the reaction chamber of greater than or equal to 5 sccm; reducing the wet helium gas flow in the reaction chamber to less than 5 sccm; and increasing the flow of copper precursor to between about 0.1 ml/min and 0.6 ml/min.

摘要翻译： 在金属氮化物衬底上形成高粘合性铜薄膜的方法包括制备在其一部分上形成有金属氮化物阻挡层的衬底; 将化学气相沉积室中的衬底加热至160℃至250℃的温度约1分钟，同时以非常慢的初始流速将铜前体引入反应室，其初始流速小于0.1ml / min，并且同时在反应室中提供大于或等于5sccm的初始高湿氦气流; 将反应室中的湿氦气流减少到小于5sccm; 并将铜前体的流量增加至约0.1ml / min至0.6ml / min。

公开(公告)号：US06503314B1

公开(公告)日：2003-01-07

申请号：US09649381

申请日：2000-08-28

申请人： Tingkai Li ,  Wei Wei Zhuang ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Wei Wei Zhuang ,  Sheng Teng Hsu

IPC分类号： C23L1412

CPC分类号： C23C16/40 ,  C23C16/409

摘要： A ferroelectric and dielectric source solution for use in chemical vapor deposition processes includes a ferroelectric/dielectric chemical vapor deposition precursor; and a solvent for carrying the ferroelectric/dielectric chemical vapor deposition precursor taken from the group of solvents consisting essentially of type A solvents, including tetraglyme, triglyme, triethylenetetramine, N,N,N′,N′-tetramethylethylenediamine; N,N,N′,N′,N″,N″-pentamethyldiethylenetriamine; and 2,2′-bipyridine; type B solvents including tetrahydrofuran, butyl ethyl ether, tert-butyl ethyl ether, butyl ether, and pentyl ether; and type C solvents including iso-propanol, 2-butanol, 2-ethyl-1-hexanol, 2-pentanol, toluene, xylene and butyl acetate; and mixtures of solvent types A, B and C.

摘要翻译： 用于化学气相沉积工艺的铁电和电介质源解决方案包括铁电/电介质化学气相沉积前体; 以及用于承载从基本上由A型溶剂组成的溶剂组中的铁电/电介质化学气相沉积前体的溶剂，包括四甘醇二甲醚，三甘醇二甲醚，三亚乙基四胺，N，N，N'，N'-四甲基乙二胺; N，N，N'，N'，N“，N” - 五甲基二亚乙基三胺; 和2,2'-联吡啶; B型溶剂包括四氢呋喃，丁基乙基醚，叔丁基乙基醚，丁基醚和戊基醚; 和C型溶剂，包括异丙醇，2-丁醇，2-乙基-1-己醇，2-戊醇，甲苯，二甲苯和乙酸丁酯; 和溶剂类型A，B和C的混合物。

公开(公告)号：US06303502B1

公开(公告)日：2001-10-16

申请号：US09588940

申请日：2000-06-06

申请人： Sheng Teng Hsu ,  David R. Evans ,  Tingkai Li ,  Jer-shen Maa ,  Wei-Wei Zhuang

发明人： Sheng Teng Hsu ,  David R. Evans ,  Tingkai Li ,  Jer-shen Maa ,  Wei-Wei Zhuang

IPC分类号： H01L2144

CPC分类号： H01L21/28291 ,  H01L29/78391

摘要： A method of fabricating a one-transistor memory includes, on a single crystal silicon substrate, depositing a bottom electrode structure on a gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions spin coating the structure with a first ferroelectric layer; depositing a second ferroelectric layer; and annealing the structure to provide a c-axis ferroelectric orientation.

摘要翻译： 制造单晶体管存储器的方法包括在单晶硅衬底上，在栅氧化层上沉积底电极结构; 注入离子以形成源极区域和漏极区域并激活注入的离子旋转涂覆第一铁电层的结构; 沉积第二铁电层; 并退火该结构以提供c轴铁电取向。

公开(公告)号：US06245261B1

公开(公告)日：2001-06-12

申请号：US09210099

申请日：1998-12-11

申请人： Wei-Wei Zhuang ,  Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Tue Nguyen ,  Lawrence J. Charneski ,  David R. Evans ,  Sheng Teng Hsu

IPC分类号： H01B102

CPC分类号： C23C16/18

摘要： A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

摘要翻译： 已经提供了具有取代的苯基乙炔配体的Cub（hfac）前体。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。 已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了产生高产率的上述前体的合成方法。

公开(公告)号：US06204176B1

公开(公告)日：2001-03-20

申请号：US09351645

申请日：1999-07-12

申请人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  Sheng Teng Hsu

发明人： Wei-Wei Zhuang ,  Lawrence J. Charneski ,  Sheng Teng Hsu

IPC分类号： H01L2144

CPC分类号： C23C16/18

摘要： A method for using a Cu(hfac) precursor with a substituted phenylethylene ligand to form an adhesive seed layer on an IC surface has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be especially adhesive. Copper deposited with this precursor has low resistivity and high adhesive characteristics. The seed layer provides a foundation for subsequent Cu layers deposited through either CVD, PVD, or electroplating. The adhesive seed layer permits the subsequent Cu layer to be deposited through an economical high deposition rate process.

摘要翻译： 已经提供了使用Cu（hfac）前体与取代的苯基乙炔配体在IC表面上形成粘合剂种子层的方法。 取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，苯基，H和C1至C6烷氧基的分子的键。 一个变型，α-甲基苯乙烯配体前体已被证明是特别粘合的。 沉积有该前体的铜具有低电阻率和高粘合特性。 种子层为通过CVD，PVD或电镀沉积的后续Cu层提供了基础。 粘合剂种子层允许随后的Cu层通过经济的高沉积速率工艺沉积。