Light emitting device and method of manufacturing the same
    61.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号:US07952101B2

    公开(公告)日:2011-05-31

    申请号:US12175516

    申请日:2008-07-18

    摘要: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier-films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

    摘要翻译: 本发明的目的是提供一种发光装置,其包括形成在塑料基板上的OLED,其能够防止由于水分或氧气的渗透而导致的劣化。 在塑料基板上,用于防止氧或水分渗透到OLED中的有机发光层(以下称为阻挡膜)中的多个膜和具有比阻挡膜的应力小的应力的膜 被称为应力缓和膜),设置在阻挡膜之间的膜。 由于多个阻挡膜的层压结构,即使在一个阻挡膜中发生裂纹,另一个阻挡膜可以有效地防止水分或氧气渗入有机发光层。 此外,在阻挡膜之间插入有比阻挡膜小的应力的应力缓和膜,从而可以减小整个密封膜的应力。 结果,几乎不发生由于应力引起的裂纹。

    Semiconductor device and manufacturing method thereof
    62.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US07923348B2

    公开(公告)日:2011-04-12

    申请号:US12480752

    申请日:2009-06-09

    IPC分类号: H01L21/30

    摘要: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFF, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

    摘要翻译: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法,并且不仅使表面积小的层被剥离,而且还允许具有大表面积的被剥离层 要完全去皮。 此外,本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地,目的是将由TFF代表的各种元件(薄膜二极管,包含硅的PIN结的光电转换元件或硅电阻元件)粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

    Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
    63.
    发明授权
    Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
    配线材料,使用布线材料配线的半导体装置及其制造方法

    公开(公告)号:US07906429B2

    公开(公告)日:2011-03-15

    申请号:US11825678

    申请日:2007-07-09

    IPC分类号: H01L21/4763

    摘要: A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

    摘要翻译: 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶,使用单一气体氩(Ar)作为溅射气体,将基板温度设定为300℃以下,将溅射气体压力设定为1.0Pa〜3.0 Pa时,膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜,其中膜中所含的钠的量等于或小于0.3ppm,优选等于或小于0.1ppm,并且具有低电阻率(等于或小于40μ&OHgr· cm),作为栅极布线材料和TFT的其它布线的材料,可以提高设置有TFT的半导体器件的操作性能和可靠性。

    Method of forming a semiconductor device
    65.
    发明授权
    Method of forming a semiconductor device 有权
    形成半导体器件的方法

    公开(公告)号:US07776712B2

    公开(公告)日:2010-08-17

    申请号:US11799713

    申请日:2007-05-02

    IPC分类号: H01L21/425

    摘要: There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electrode made of a semiconductor material and a second gate electrode made of a metal material. An n-channel TFT includes an LDD region, and a region overlapping with the gate electrode and a region not overlapping with the gate electrode are provided, so that a high electric field in the vicinity of a drain is relieved, and at the same time, an increase of an off current is prevented.

    摘要翻译: 提供了一种晶体TFT,其中可以获得与MOS晶体管相当或优于其的可靠性,并且可以在导通状态和截止状态两者中获得优异的特性。 晶体TFT的栅电极由由半导体材料制成的第一栅电极和由金属材料制成的第二栅电极的叠层结构形成。 n沟道TFT包括LDD区域和与栅电极重叠的区域和与栅电极不重叠的区域,从而释放漏极附近的高电场,并且同时 ,防止了关断电流的增加。

    Plasma CVD apparatus
    66.
    发明授权
    Plasma CVD apparatus 有权
    等离子体CVD装置

    公开(公告)号:US07723218B2

    公开(公告)日:2010-05-25

    申请号:US11102727

    申请日:2005-04-11

    IPC分类号: H01L21/31 H01L21/469

    摘要: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

    摘要翻译: 在等离子体CVD装置中,防止了不必要的放电,例如电弧放电,由于附着在反应室上的膜的剥离引起的颗粒的量减少,并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113,真空排气装置118和反应气体引入管114的导电反应室104中,在由电极111围绕的空间中产生等离子体115,衬底保持器 112和绝缘体120。

    Light-emitting device
    68.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US07629617B2

    公开(公告)日:2009-12-08

    申请号:US11585954

    申请日:2006-10-25

    IPC分类号: H01L27/15

    摘要: The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

    摘要翻译: 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中,通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案,并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

    IC card and booking account system using the IC card
    70.
    发明授权
    IC card and booking account system using the IC card 有权
    IC卡和预订账号系统使用IC卡

    公开(公告)号:US07518692B2

    公开(公告)日:2009-04-14

    申请号:US10739084

    申请日:2003-12-19

    IPC分类号: G02F1/1339 G02F1/1345

    摘要: It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

    摘要翻译: 本发明的目的是提供一种高度复杂的功能卡,其可以通过防止诸如改变脸部照片的伪造,以及显示其他图像以及脸部照片来确保安全性。 一种包括显示装置和薄膜集成电路的卡; 其中所述显示装置的驱动由所述薄膜集成电路控制; 通过使用多晶半导体膜形成用于薄膜集成电路的半导体元件和显示装置; 薄膜集成电路和显示装置用卡在第一基板和第二基板之间的树脂密封; 并且第一基板和第二基板是塑料基板。