公开(公告)号：US08363547B2

公开(公告)日：2013-01-29

申请号：US12633544

申请日：2009-12-08

申请人： Takeshi Shimada ,  Shinya Hatakeyama ,  Junichi Ehara ,  Ken Takashima

发明人： Takeshi Shimada ,  Shinya Hatakeyama ,  Junichi Ehara ,  Ken Takashima

IPC分类号： H04L12/26

CPC分类号： H04B7/022 ,  H04L1/08 ,  H04L43/0882 ,  H04L43/16 ,  H04L47/10 ,  H04L47/11 ,  H04L47/14 ,  H04L47/32

摘要： A mobile communication system in which a mobile station copies data and transmits that copied data to a plurality of base stations, each base station sends that copied data to a serving radio network control device (S-RNC) directly or via a drift radio network control device (D-RNC), and the S-RNC selectively combines and outputs the received copied data; wherein a congestion monitoring unit monitors the congestion state of a line between the D-RNC and S-RNC, and when that line is congested, a D-RNC selectively combines the copied data that is inputted from the plurality of base stations and sends the result to that line, and when the line is not congested, the D-RNC sends the copied data that is inputted from the plurality of base stations to the line without performing selective combination.

摘要翻译： 一种移动通信系统，其中移动台复制数据并将复制的数据发送到多个基站，每个基站将该复制的数据直接或经由漂移无线电网络控制发送到服务无线电网络控制设备（S-RNC） 设备（D-RNC），并且S-RNC选择性地组合并输出接收到的复制数据; 其中拥塞监视单元监视D-RNC与S-RNC之间的线路的拥塞状态，当该线路拥塞时，D-RNC选择性地组合从多个基站输入的复制数据，并发送 导致该行，并且当线路​​不拥塞时，D-RNC将不从多个基站输入的复制数据发送到线路而不执行选择性组合。

公开(公告)号：US08241420B2

公开(公告)日：2012-08-14

申请号：US12063490

申请日：2005-08-11

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： C30B29/22

CPC分类号： C30B29/22 ,  C30B13/00 ,  C30B15/00 ,  C30B29/24

摘要： The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same. According to the invention, a single crystal of a composite oxide is obtained from a composition in which a slight amount of SrTiO3 is added to LaAlO3, and the (1-X)LaAlO3—XSrTiO3 single crystal material having the specific composition has such dielectric characteristics for electronic devices that the dielectric constant is 24 or more and the Qf value is 300,000 GHz or more, is considerably improved in the Qf value as a dielectric material, and can be applied to a high-temperature superconducting filter.

摘要翻译： 本发明旨在提供一种单晶材料，其可用作具有高Qf值的电子器件中的电介质材料; 及其制造方法。 根据本发明，由LaAlO 3中添加少量SrTiO 3的组合物获得复合氧化物的单晶，具有特定组成的（1-X）LaAlO 3-XSrTiO 3单晶材料具有这样的介电特性 对于电介质常数为24以上，Qf值为300000GHz以上的电子器件，作为电介质材料的Qf值显着提高，可以应用于高温超导滤波器。

公开(公告)号：US08160403B2

公开(公告)日：2012-04-17

申请号：US12219931

申请日：2008-07-30

申请人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

发明人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

IPC分类号： G06K9/03 ,  H04N1/387 ,  G06F17/00

CPC分类号： G06T11/60 ,  A63F13/12 ,  A63F13/63 ,  A63F2300/57 ,  A63F2300/6018

摘要： A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.

摘要翻译： 用作图像发送装置的游戏装置包括CPU。 CPU根据用户的指示，使用控制器执行至少一个图像的编辑，在执行编辑期间通过无线通信模块将图像的图像数据发送到网络，并且进一步发送指示布局的布局信息 完成编辑后的图像。

公开(公告)号：US08076256B2

公开(公告)日：2011-12-13

申请号：US12445198

申请日：2007-10-26

申请人： Takeshi Shimada ,  Kazuya Toji

发明人： Takeshi Shimada ,  Kazuya Toji

IPC分类号： C04B35/00 ,  C04B35/14 ,  C04B35/16

CPC分类号： H01C7/025 ,  C01G23/003 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3236 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/608 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  H01C7/045 ,  H01C17/06533 ,  H01G4/1227 ,  H01G7/06 ,  H01L21/31691 ,  H01L28/20

摘要： It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.

摘要翻译： 旨在提供能够使其居里温度朝向正方向移动的能够提高其跳跃特性同时最小化室温电阻率增加的无铅半导体陶瓷组合物。 提供了一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该半导体陶瓷组合物通过烧结含有煅烧BT粉末的混合煅烧粉末而获得，该煅烧粉末含有（BaR）TiO 3煅烧粉末或 （TiM）O 3（其中R和M各自为半导体掺杂剂）的煅烧粉末和包含（BiNa）TiO 3的煅烧粉末的煅烧BNT粉末; 其中将BaCO 3和/或TiO 2添加到煅烧的BT粉末或煅烧的BNT粉末或混合的煅烧粉末中。

公开(公告)号：US07993547B2

公开(公告)日：2011-08-09

申请号：US12444895

申请日：2007-10-26

申请人： Takeshi Shimada ,  Kazuya Toji

发明人： Takeshi Shimada ,  Kazuya Toji

IPC分类号： H01B1/08 ,  C04B35/46

CPC分类号： H01C7/025 ,  C04B35/4682 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6584 ,  H01C17/06533

摘要： It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same. When a calcined Ba(TiM)O3 powder (M is a semiconductor dopant) and a calcined (BiNa)TiO3 powder are separately prepared and the Ba(TiM)O3 powder is calcined at a relatively high temperature while the (BiNa)TiO3 powder is at a relatively low temperature, both at the most suitable temperatures for them, then the evaporation of Bi may be retarded and the compositional deviation of Bi—Na may be thereby suppressed to inhibit the formation of different phases; and when these calcined powders are mixed, formed and sintered, then a semiconductor ceramic composition which has a low resistivity at room temperature and is capable of restraining the fluctuation of the Curie temperature can be obtained.

摘要翻译： 旨在提供一种半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na代替，Bi-Na能够抑制在煅烧步骤中Bi的蒸发，因此能够抑制Bi-Na的组成偏差 抑制不同相的形成，能够进一步降低室温下的电阻率，并且能够抑制居里温度的波动; 并提供相同的生产工艺。 当分别制备煅烧的Ba（TiM）O 3粉末（M是半导体掺杂剂）和煅烧（BiNa）TiO 3粉末时，并且在（BiNa）TiO 3粉末是相对较高的温度下煅烧Ba（TiM）O 3粉末， 在相对较低的温度下，在它们最适合的温度下，则Bi的蒸发可能被延迟，并且可以抑制Bi-Na的组成偏差以抑制不同相的形成; 并且当将这些煅烧粉末混合，形成和烧结时，​​可以获得在室温下具有低电阻率并且能够抑制居里温度波动的半导体陶瓷组合物。

公开(公告)号：US07893001B2

公开(公告)日：2011-02-22

申请号：US12855182

申请日：2010-08-12

申请人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

发明人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

IPC分类号： C04B35/468

CPC分类号： C04B35/4682 ,  C04B35/6262 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/652 ,  C04B2235/6585 ,  H01G4/1227

摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

摘要翻译： 本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。 根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制， 室温下的电阻率可以显着降低。 因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

公开(公告)号：US07700509B2

公开(公告)日：2010-04-20

申请号：US11910222

申请日：2006-03-31

申请人： Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

发明人： Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

IPC分类号： C04B35/00 ,  C01F17/00 ,  C01D15/02 ,  C01B13/14 ,  C04B35/46 ,  H01B1/08

CPC分类号： H01G4/1227 ,  C04B35/4682 ,  C04B35/62695 ,  C04B35/6303 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6584 ,  C04B2235/96 ,  H01C7/025

摘要： A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1−yRy)1−x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0≦x≦0.14, and 0.002≦y≦0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.

摘要翻译： 由组成式[（Bi0.5Na0.5）x（Ba1-yRy）1-x] TiO3表示的半导体盘的制造方法，其中R是La，Dy，Eu，Gd和Y中的至少一种元素 x和y分别满足0＆lt; nlE; x＆lt; ll; 0.14和0.002＆nlE; y＆nlE; 0.02包括在氧浓度为9ppm至1％的惰性气体气氛中进行烧结，并且其中在升高的温度下在氧化 不进行烧结后的气氛。

公开(公告)号：US20090048090A1

公开(公告)日：2009-02-19

申请号：US12063490

申请日：2005-08-11

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： C04B35/47 ,  C30B15/00 ,  C30B13/00

CPC分类号： C30B29/22 ,  C30B13/00 ,  C30B15/00 ,  C30B29/24

摘要： The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same. According to the invention, a single crystal of a composite oxide is obtained from a composition in which a slight amount of SrTiO3 is added to LaAlO3, and the (1-X)LaAlO3—XSrTiO3 single crystal material having the specific composition has such dielectric characteristics for electronic devices that the dielectric constant is 24 or more and the Qf value is 300,000 GHz or more, is considerably improved in the Qf value as a dielectric material, and can be applied to a high-temperature superconducting filter.

摘要翻译： 本发明旨在提供一种单晶材料，其可用作具有高Qf值的电子器件中的电介质材料; 及其制造方法。 根据本发明，由LaAlO 3中添加少量SrTiO 3的组合物获得复合氧化物的单晶，具有特定组成的（1-X）LaAlO 3-XSrTiO 3单晶材料具有这样的介电特性 对于电介质常数为24以上，Qf值为300000GHz以上的电子器件，作为电介质材料的Qf值显着提高，可以应用于高温超导滤波器。

公开(公告)号：US20070281478A1

公开(公告)日：2007-12-06

申请号：US11502416

申请日：2006-08-11

申请人： Eiji Ikegami ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

发明人： Eiji Ikegami ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

IPC分类号： C23F1/00 ,  H01L21/302 ,  C23C16/00

CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

公开(公告)号：US20070023683A1

公开(公告)日：2007-02-01

申请号：US11518894

申请日：2006-09-12

申请人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

IPC分类号： G01F23/00

CPC分类号： H01L21/67207 ,  H01L21/67167

摘要： A vacuum processing apparatus and method includes a sample taken out from a given cassette placed on a cassette support in atmosphere, the sample is carried into a vacuum processing chamber via a chamber enabling switching between atmosphere and vacuum, the sample is subjected to etching processing in the vacuum processing chamber, and at least one inspection process is carried out in the vacuum either before or after etching of the sample in the vacuum processing chamber. The at least one inspection process in the vacuum is a defect inspection.

摘要翻译： 真空处理装置和方法包括从大气中放置在盒支架上的给定盒取出的样品，通过能够在大气和真空之间切换的室将样品运送到真空处理室中，对样品进行蚀刻处理 在真空处理室中对样品进行蚀刻之前或之后，在真空中进行至少一次检查处理。 真空中的至少一个检查过程是缺陷检查。