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61.发明授权Nitrogen-containing monomer, polymer, resist composition, and patterning process 有权含氮单体，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US09207534B2
公开(公告)日：2015-12-08
申请号：US13349754
申请日：2012-01-13
IPC分类号： G03F7/039 , G03F7/004 , G03F7/30 , G03F7/20 , C07D211/44
CPC分类号： G03F7/0397 , C07D211/44 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2037 , G03F7/2039 , G03F7/2041 , G03F7/30
摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要翻译： 具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元 能够在酸的作用下产生羧基和/或羟基的基团。 该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。
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公开(公告)号：US09029064B2
公开(公告)日：2015-05-12
申请号：US13350153
申请日：2012-01-13
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/094 , G03F7/11 , G03F7/20 , G03F7/2037 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要翻译： 通过将包含含有具有与酸不稳定基团键合的氮原子的重复单元，酸发生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，预烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于 高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。
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63.发明授权Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺公开(公告)号：US08349533B2
公开(公告)日：2013-01-08
申请号：US12588590
申请日：2009-10-20
CPC分类号： C07C381/12 , C07C309/12 , C07C2603/74 , C07D307/93 , G03F7/0045 , G03F7/091
摘要： A resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film. The resist lower-layer composition is insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid by heating at a temperature of 100° C. or higher.
摘要翻译： 一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用，以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层。 抗蚀剂下层组合物在形成下层之后在碱性显影剂中不溶或难溶，抗蚀剂下层组合物至少包含用于通过在100℃的温度下加热产生酸的热酸发生剂 ℃以上。
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公开(公告)号：US08338078B2
公开(公告)日：2012-12-25
申请号：US12581625
申请日：2009-10-19
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译： 包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。 底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。
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公开(公告)号：US20120249995A1
公开(公告)日：2012-10-04
申请号：US13494746
申请日：2012-06-12
申请人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
发明人： Jun Hatakeyama , Yuji Harada , Takeru Watanabe
IPC分类号： G03B27/32
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit.
摘要翻译： 本发明是用于浸没式光刻的保护膜材料，其能够进行希望的浸渍光刻，可以与光致抗蚀剂层的显影同时除去，并且具有优异的工艺适应性。 本发明还包括使用该材料形成图案的方法。 更具体地说，本发明是一种保护膜材料，其包含（i）包含具有含有至少一个氟原子的含氟烷基或亚烷基的重复单元和任选的碱可溶重复单元的聚合物的共混物和包含 具有无氟烷基和任选的碱可溶重复单元的重复单元，或（ii）含有含有至少一个氟原子的含氟烷基或亚烷基的重复单元的聚合物和具有至少一个氟原子的重复单元 无氟烷基和任选的碱溶性重复单元。
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66.发明申请公开(公告)号：US20120141938A1
公开(公告)日：2012-06-07
申请号：US13311192
申请日：2011-12-05
IPC分类号： G03F7/20 , C07C317/48 , G03F7/025 , C07D209/34 , G03F7/027 , C07C229/46 , C07C229/40
CPC分类号： C07D239/28 , G03F7/0045
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.
摘要翻译： 包含基础聚合物，酸产生剂和具有酸不稳定基团取代的羧基的β-丙氨酸，γ-氨基丁酸或5-氨基戊酸衍生物形式的胺猝灭剂的化学放大抗蚀剂组合物具有高 暴露前后的碱溶解速度对比度，形成高分辨率，最小粗糙度和宽焦距的良好轮廓图案。
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公开(公告)号：US20110129777A1
公开(公告)日：2011-06-02
申请号：US12957785
申请日：2010-12-01
申请人： Jun Hatakeyama , Takeru Watanabe
发明人： Jun Hatakeyama , Takeru Watanabe
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks.
摘要翻译： 包含基础聚合物，酸产生剂和硫代吗啉二氧化物结构的碱性化合物的化学放大抗蚀剂组合物具有许多优点，包括暴露前后碱性溶解速率的高对比度，曝光后的良好图案轮廓，最小化的粗糙度和 宽焦距 可以为正或负的抗蚀剂组合物可用于制造VLSI和光掩模。
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68.发明授权公开(公告)号：US07041846B2
公开(公告)日：2006-05-09
申请号：US10791843
申请日：2004-03-04
申请人： Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
发明人： Takeru Watanabe , Jun Hatakeyama , Takeshi Kinsho
IPC分类号： C07C69/74 , C07C69/75 , C07C69/753
CPC分类号： C07D307/93 , C07C69/732 , C07C69/734 , C07C2601/08 , C07C2603/68 , C07C2603/74 , G03F7/0397
摘要： Alicyclic methacrylate compounds having an oxygen substituent group on their α-methyl group, represented by formula (1), are novel wherein R1 is H or C1–C10 alkyl which may contain a halogen atom, hydroxyl group, ether bond, carbonyl group, carboxyl group or cyano group, and R2 is a monovalent C3–C20 organic group having an alicyclic structure. Polymers prepared from these alicyclic methacrylate compounds have improved transparency, especially at the exposure wavelength of an excimer laser, and improved dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, show a high resolution, allow smooth development, lend themselves to micropatterning, and are thus suitable as micropatterning material for VLSI fabrication
摘要翻译： 由式（1）表示的在其α-甲基上具有氧取代基的脂环族甲基丙烯酸酯化合物是新的，其中R 1是H或C 1 -C 3 可以含有卤素原子，羟基，醚键，羰基，羧基或氰基的烷基，R 2是一价C 3〜 具有脂环结构的-C 20官能团。 由这些脂环族甲基丙烯酸酯化合物制备的聚合物具有改善的透明度，特别是在准分子激光的曝光波长下，以及改进的耐干蚀刻性。 包含聚合物的抗蚀剂组合物对高能辐射敏感，显示高分辨率，允许平滑显影，适合于微图案化，因此适用于VLSI制造的微图案材料
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69.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20100151381A1
公开(公告)日：2010-06-17
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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公开(公告)号：US20090202943A1
公开(公告)日：2009-08-13
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/00 , C08F228/02 , C08F24/00
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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