公开(公告)号：US20070293003A1

公开(公告)日：2007-12-20

申请号：US11847721

申请日：2007-08-30

申请人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L21/336

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

公开(公告)号：US20070082470A1

公开(公告)日：2007-04-12

申请号：US11520175

申请日：2006-09-13

申请人： Eugene Fitzgerald ,  Richard Hammond ,  Matthew Currie

发明人： Eugene Fitzgerald ,  Richard Hammond ,  Matthew Currie

IPC分类号： H01L21/3205 ,  H01L21/28

CPC分类号： H01L29/66477 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/1054 ,  H01L29/78 ,  H01L29/7838 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1−xGex layer on a substrate, a strained channel layer on the relaxed Si1−xGex layer, and a Si1−yGey layer; removing the Si1−yGey layer; and providing a dielectric layer. The dielectric layer includes a gate dielectric of a MISFET. In alternative embodiments, the heterostructure includes a SiGe spacer layer and a Si layer.

公开(公告)号：US20060197123A1

公开(公告)日：2006-09-07

申请号：US11415556

申请日：2006-05-01

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20060186510A1

公开(公告)日：2006-08-24

申请号：US11412276

申请日：2006-04-27

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

IPC分类号： H01L29/73

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US07084431B2

公开(公告)日：2006-08-01

申请号：US10832217

申请日：2004-04-26

申请人： Jack Oon Chu ,  Richard Hammond ,  Khalid EzzEldin Ismail ,  Steven John Koester ,  Patricia May Mooney ,  John A. Ott

发明人： Jack Oon Chu ,  Richard Hammond ,  Khalid EzzEldin Ismail ,  Steven John Koester ,  Patricia May Mooney ,  John A. Ott

IPC分类号： H01L27/15 ,  H01L29/06

CPC分类号： H01L29/7782 ,  H01L29/1025 ,  H01L29/1054

摘要： A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, Si1−yGey, within a relaxed Si1−xGex layer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.

摘要翻译： 提供了用于在其上形成电子器件的分层结构。 层状结构包括在弛豫的Si 1-x Ge x x中的超射层，Si 1-y Y y Y y 其中y = X + Z，Z在0.01至0.1的范围内，X为0.35至0.5。 超拍层具有小于其临界厚度的厚度。

公开(公告)号：US20050130361A1

公开(公告)日：2005-06-16

申请号：US11036958

申请日：2005-01-14

申请人： Narayanan Balasubramanian ,  Richard Hammond

发明人： Narayanan Balasubramanian ,  Richard Hammond

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L29/10 ,  H01L29/06 ,  H01L21/336 ,  H01L21/8234 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/76232 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02664 ,  H01L29/1054

摘要： A MOSFET device in strained silicon-on-SiGe and a method of forming the device are described. The said device achieves reduced junction leakage due to the lower band-gap values of SiGe. The method consists of forming isolation trenches in a composite strained-Si/SiGe substrate and growing a liner oxide by wet oxidation such that oxidation is selective to SiGe only, with negligible oxidation of silicon surfaces. Selective oxidation results in oxide encroachment under strained-Si, thereby reducing the junction area after device fabrication is completed. Reduced junction area leads to reduced n+/p or p+/n junction leakage current.

摘要翻译： 描述了应变Si-Si中的MOSFET器件和形成器件的方法。 所述器件由于SiGe的较低带隙值而实现了减少的结漏电。 该方法包括在复合应变Si / SiGe衬底中形成隔离沟槽，并通过湿式氧化生长衬里氧化物，使氧化仅对SiGe有选择性，硅表面的氧化可忽略不计。 选择性氧化导致应变Si下的氧化物侵蚀，从而在器件制造完成后减少接合面积。 减少的结面积导致n + SUP / p或p + SUP / N结漏电流减小。

公开(公告)号：US20050116219A1

公开(公告)日：2005-06-02

申请号：US11032413

申请日：2005-01-10

申请人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

发明人： Glyn Braithwaite ,  Richard Hammond ,  Matthew Currie

IPC分类号： H01L27/06 ,  H01L27/092 ,  H01L29/10 ,  H01L29/51 ,  H01L29/786 ,  H03B5/12 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099 ,  H01L31/072

CPC分类号： H01L29/7378 ,  H01L27/0617 ,  H01L27/092 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78654 ,  H03B5/1203 ,  H03B5/1209 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1228 ,  H03B5/1243 ,  H03K3/354 ,  H03L7/093 ,  H03L7/099

摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

摘要翻译： 用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变通道层的场效应晶体管（“FET”）来制造。 具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。 诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

公开(公告)号：US06831292B2

公开(公告)日：2004-12-14

申请号：US10251424

申请日：2002-09-20

申请人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L2906

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US08353825B2

公开(公告)日：2013-01-15

申请号：US12717203

申请日：2010-03-04

申请人： Richard Hammond ,  Sally Carter

发明人： Richard Hammond ,  Sally Carter

IPC分类号： A61B1/32

CPC分类号： A61B17/3498 ,  A61B17/3421 ,  A61B17/3462 ,  A61B2017/3437

摘要： A surgical access portal includes a seal housing and a sleeve mounted to the sleeve housing having an internal longitudinal passage adapted to provide access to underlying tissue. A seal is in mechanical cooperation with an inner wall of the seal housing and has an opening for reception and passage of a surgical instrument in a substantially sealed relation. A sponge is disposed distally of the seal and absorbs fluids that enter the seal housing.

摘要翻译： 外科进入入口包括密封壳体和安装到套筒壳体的套筒，其具有适于提供对下面组织的通路的内部纵向通道。 密封件与密封壳体的内壁机械协作，并且具有用于接收和通过外科器械基本上密封的开口。 海绵被放置在密封件的远侧并吸收进入密封壳体的流体。

公开(公告)号：US07850653B2

公开(公告)日：2010-12-14

申请号：US12706029

申请日：2010-02-16

申请人： Richard Hammond

发明人： Richard Hammond

IPC分类号： A61M5/178

CPC分类号： A61B17/3421 ,  A61B17/3462

摘要： A surgical access device includes a housing; an access member extending distally from the housing and being dimensioned for positioning within tissue, and defining a longitudinal axis; and a seal assembly disposed within the housing. The seal assembly includes first and second seal components respectively having first and second seal members. Each of the first and second seal members defines a passage for passage of a surgical object in substantial sealed relation therewith. The first and second seal components are capable of relative rotation about the longitudinal axis between a first position, in which passages of the first and second seal members are in substantial alignment, and a second position where the passages of the first and second seal members are offset to inhibit the communication of fluid through the seal assembly.

摘要翻译： 外科进入装置包括壳体; 定位构件，其从壳体向远侧延伸并且尺寸设计成用于在组织内定位并限定纵向轴线; 以及设置在所述壳体内的密封组件。 密封组件包括分别具有第一和第二密封构件的第一和第二密封部件。 第一和第二密封构件中的每一个限定了用于与其处于实质密封关系的手术物体通过的通道。 第一密封部件和第二密封部件能够在第一位置和第二位置之间围绕纵向轴线相对旋转，第一位置在第一位置和第二位置之间，第一位置和第二位置，第一和第二密封部件的通道基本对准， 偏移以阻止流体通过密封组件的连通。