公开(公告)号：US06911371B2

公开(公告)日：2005-06-28

申请号：US09879335

申请日：2001-06-11

申请人： Vishnu K. Agarwal ,  F. Daniel Gealy

发明人： Vishnu K. Agarwal ,  F. Daniel Gealy

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L21/20

CPC分类号： H01L28/40 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5222 ,  H01L28/57 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor forming method can include forming an insulation layer over a substrate and forming a barrier layer to threshold voltage shift inducing material over the substrate. An opening can be formed at least into the insulation layer and a capacitor dielectric layer formed at least within the opening. Threshold voltage inducing material can be provided over the barrier layer but be retarded in movement into an electronic device comprised by the substrate. The dielectric layer can comprise a tantalum oxide and the barrier layer can include a silicon nitride. Providing threshold voltage shift inducing material can include oxide annealing dielectric layer such as with N2O. The barrier layer can be formed over the insulation layer, the insulation layer can be formed over the barrier layer, or the barrier layer can be formed over a first insulation layer with a second insulation layer formed over the barrier layer. Further, the barrier layer can be formed after forming the capacitor electrode or after forming the dielectric layer, for example, by using poor step coverage deposition methods.

摘要翻译： 电容器形成方法可以包括在衬底上形成绝缘层，并在衬底上形成阈值电压移动诱导材料的势垒层。 开口可以至少形成在绝缘层中，并且至少形成在开口内形成电容器电介质层。 阈值电压诱导材料可以设置在阻挡层之上，但是在运动中被延迟到由衬底包括的电子器件中。 电介质层可以包括氧化钽，并且阻挡层可以包括氮化硅。 提供阈值电压移动诱导材料可以包括氧化物退火介质层，例如N 2 O 2。 可以在绝缘层上形成阻挡层，可以在阻挡层上形成绝缘层，或者可以在第一绝缘层上形成阻挡层，在隔离层上形成第二绝缘层。 此外，阻挡层可以在形成电容器电极之后或在形成介电层之后形成，例如通过使用差的阶梯覆盖沉积方法。

公开(公告)号：US06858894B2

公开(公告)日：2005-02-22

申请号：US10773780

申请日：2004-02-09

申请人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

发明人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

IPC分类号： H01L21/02 ,  H01L21/334 ,  H01L21/4763 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

公开(公告)号：US06785120B1

公开(公告)日：2004-08-31

申请号：US10613191

申请日：2003-07-03

申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

IPC分类号： H01G406

CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

公开(公告)号：US06746916B2

公开(公告)日：2004-06-08

申请号：US10233590

申请日：2002-09-04

申请人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

发明人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01G4/008 ,  H01G4/33 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L28/91

摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell is disclosed. The platinum layer of the lower electrode is formed such that it adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode.

摘要翻译： 公开了一种用于随机存取存储器（RAM）单元的具有包括至少两层的多层下电极 - 铂层和铂 - 铑层的铁电或高介电常数电容器。 下电极的铂层形成为与电容电介质接触，电容器电介质是铁电或高介电常数电介质，例如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。

公开(公告)号：US06282080B1

公开(公告)日：2001-08-28

申请号：US09229518

申请日：1999-01-13

申请人： Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

发明人： Scott Jeffrey DeBoer ,  F. Daniel Gealy ,  Randhir P. S. Thakur

IPC分类号： H01G406

CPC分类号： H01L28/40 ,  H01G4/10 ,  H01L21/28568 ,  H01L21/3145 ,  H01L21/31604 ,  H01L28/56

摘要： The invention pertains to semiconductor circuit components and capacitors. In another aspect, the invention includes a capacitor including: a) a first capacitor plate; b) a first tantalum-comprising layer over the first capacitor plate; c) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer having nitrogen; and d) a second capacitor plate over the second tantalum-comprising layer. In another aspect, the invention includes a component having: a) a first tantalum-comprising layer; and b) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer having nitrogen.

摘要翻译： 本发明涉及半导体电路部件和电容器。 在另一方面，本发明包括一种电容器，包括：a）第一电容器板; b）在第一电容器板上的第一钽包层; c）在所述第一含钽层上的第二含钽层，所述第二含钽层具有氮; 以及d）在所述第二含钽层上的第二电容器板。 在另一方面，本发明包括具有以下成分的组分：a）第一含钽层; 以及b）在所述第一含钽层上的第二含钽层，所述第二含钽层具有氮。

公开(公告)号：US08481122B2

公开(公告)日：2013-07-09

申请号：US11485658

申请日：2006-07-12

申请人： Chris M. Carlson ,  Vishwanath Bhat ,  F. Daniel Gealy

发明人： Chris M. Carlson ,  Vishwanath Bhat ,  F. Daniel Gealy

IPC分类号： C23C16/40

CPC分类号： C23C16/45531 ,  C23C16/40

摘要： ALD-type methods which include providing two or more different precursors within a chamber at different and substantially non-overlapping times relative to one another to form a material, and thereafter exposing the material to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.

摘要翻译： ALD型方法包括在腔室内相对于彼此以不同且基本上不重叠的时间提供两种或更多种不同的前体以形成材料，然后将该材料暴露于一种或多种反应物以改变材料的组成。 在特定方面，用于形成材料的前体是含金属的前体，用于改变材料组成的反应物包括氧，硅和/或氮。

公开(公告)号：US08030168B2

公开(公告)日：2011-10-04

申请号：US12419014

申请日：2009-04-06

申请人： Brett W. Busch ,  David K. Hwang ,  F. Daniel Gealy

发明人： Brett W. Busch ,  David K. Hwang ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01L21/76879 ,  B82Y10/00 ,  H01L21/28525 ,  H01L21/76885 ,  H01L21/76897 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L28/91 ,  Y10S977/773

摘要： The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cells. In one implementation, a method of electrically interconnecting different elevation conductive structures includes forming a first conductive structure comprising a first electrically conductive surface at a first elevation of a substrate. A nanowhisker is grown from the first electrically conductive surface, and is provided to be electrically conductive. Electrically insulative material is provided about the nanowhisker. An electrically conductive material is deposited over the electrically insulative material in electrical contact with the nanowhisker at a second elevation which is elevationally outward of the first elevation, and the electrically conductive material is provided into a second conductive structure. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括电互连不同高程导电结构的方法，形成电容器的方法，在DRAM中形成衬底位线接触和位线之间的互连的方法，以及形成DRAM存储单元的方法。 在一个实施方式中，电连接不同高程导电结构的方法包括在衬底的第一高度处形成包括第一导电表面的第一导电结构。 纳米晶须从第一导电表面生长，并被提供为导电的。 提供关于纳米晶须的电绝缘材料。 导电材料沉积在电绝缘材料上，在第二高度处与纳米晶须电接触，第二高度位于第一高度的正上方，并且导电材料被提供到第二导电结构中。 考虑了其他方面和实现。

公开(公告)号：US07550345B2

公开(公告)日：2009-06-23

申请号：US11485593

申请日：2006-07-11

申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

IPC分类号： H01L21/20

CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

公开(公告)号：US07498057B2

公开(公告)日：2009-03-03

申请号：US11075017

申请日：2005-03-08

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： C23C16/04

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455

摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

摘要翻译： 沉积方法包括将基板定位在至少部分地由室壁限定的沉积室内。 所述室壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 在衬底上设置工艺气体，有效地将层沉积到衬底上。 在这种提供过程中，材料粘附到室表面。 反应性净化气体从吹扫气体入口排出到沉积室，有效地在室表面上形成反应性气体帘幕并远离衬底，这种反应性气体与这种粘附材料反应。 考虑进一步的实现。

公开(公告)号：US20080241386A1

公开(公告)日：2008-10-02

申请号：US12115412

申请日：2008-05-05

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： C23C16/08

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。