公开(公告)号：US10008581B2

公开(公告)日：2018-06-26

申请号：US14840041

申请日：2015-08-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Tsen Lu ,  Chien-Ming Lai ,  Lu-Sheng Chou ,  Ya-Huei Tsai ,  Ching-Hsiang Chiu ,  Yu-Tung Hsiao ,  Chen-Ming Huang ,  Kun-Ju Li ,  Yu-Ping Wang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  C22C32/00 ,  H01L29/51 ,  H01L21/28 ,  B32B1/00

CPC classification number: H01L29/66545 ,  B32B1/00 ,  B32B18/00 ,  C22C32/0068 ,  H01L21/28088 ,  H01L29/4238 ,  H01L29/4966 ,  H01L29/511

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, in which the top portion being a nitrogen rich portion, and the middle portion and the bottom portion being titanium rich portions.

公开(公告)号：US09721840B2

公开(公告)日：2017-08-01

申请号：US15194577

申请日：2016-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Chien-Chung Huang ,  Yu-Ting Tseng ,  Ya-Huei Tsai ,  Yu-Ping Wang

IPC: H01L21/8234 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/66 ,  H01L21/283 ,  H01L21/321 ,  H01L21/3213 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/823437 ,  H01L21/28088 ,  H01L21/283 ,  H01L21/3211 ,  H01L21/32139 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.

公开(公告)号：US20160307805A1

公开(公告)日：2016-10-20

申请号：US15194577

申请日：2016-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Chien-Chung Huang ,  Yu-Ting Tseng ,  Ya-Huei Tsai ,  Yu-Ping Wang

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L21/283 ,  H01L21/321

CPC classification number: H01L21/823437 ,  H01L21/28088 ,  H01L21/283 ,  H01L21/3211 ,  H01L21/32139 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.

Abstract translation: 本发明提供一种互补金属氧化物半导体器件，其包括PMOS和NMOS。 PMOS具有P型金属栅极，其包括底部阻挡层，P功函数金属（PWFM）层，N功函数调整（NWFT）层，N功函数金属（NWFM）层和金属层。 NMOS具有N型金属栅极，其包括NWFT层，NWFM层和低电阻层。 本发明还提供一种形成该方法的方法。

公开(公告)号：US09379242B1

公开(公告)日：2016-06-28

申请号：US14723476

申请日：2015-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Mon-Sen Lin ,  Yu-Ping Wang ,  Yu-Ting Tseng ,  Hao-Yeh Liu ,  Chun-tsen Lu

IPC: H01L21/4763 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/7847 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.

Abstract translation: 一种制造鳍状场效应晶体管的方法，包括：在其上提供具有至少一个鳍结构的衬底，伪栅极和内部电介质层，去除所述虚设栅极以在所述鳍结构上形成栅极沟槽，以覆盖形式施加应力膜 在基板上覆盖栅极沟槽的表面，执行热退火处理，去除应力膜和形成金属栅极在栅极沟槽中。

公开(公告)号：US20250113742A1

公开(公告)日：2025-04-03

申请号：US18979539

申请日：2024-12-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Yu-Ping Wang

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.

公开(公告)号：US12268098B2

公开(公告)日：2025-04-01

申请号：US18528707

申请日：2023-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Liang Chu ,  Jian-Cheng Chen ,  Yu-Ping Wang ,  Yu-Ruei Chen

IPC: H10N50/80 ,  G11C11/16 ,  H01L27/02 ,  H10B61/00

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

公开(公告)号：US12201032B2

公开(公告)日：2025-01-14

申请号：US17223025

申请日：2021-04-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Ying-Cheng Liu ,  Yi-An Shih ,  Yi-Hui Lee ,  Chen-Yi Weng ,  Chin-Yang Hsieh ,  I-Ming Tseng ,  Jing-Yin Jhang ,  Yu-Ping Wang

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/80 ,  H10N50/01

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.

公开(公告)号：US12150313B2

公开(公告)日：2024-11-19

申请号：US18500994

申请日：2023-11-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jia-Rong Wu ,  I-Fan Chang ,  Rai-Min Huang ,  Ya-Huei Tsai ,  Yu-Ping Wang

IPC: H10B61/00 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H01L23/522 ,  H01L23/528 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

公开(公告)号：US20240365563A1

公开(公告)日：2024-10-31

申请号：US18762663

申请日：2024-07-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： Hui-Lin Wang ,  Po-Kai Hsu ,  Jing-Yin Jhang ,  Yu-Ping Wang ,  Hung-Yueh Chen ,  Wei Chen

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10B61/22 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A semiconductor device including a magnetic tunneling junction (MTJ) and a hard mask on a substrate, a first inter-metal dielectric (IMD) layer around the MTJ, a first metal interconnection adjacent to the MTJ, a first barrier layer and a channel layer on the first IMD layer to directly contact the hard mask and electrically connect the MTJ and the first metal interconnection, and a stop layer around the channel layer.

公开(公告)号：US12108680B2

公开(公告)日：2024-10-01

申请号：US18135758

申请日：2023-04-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Po-Kai Hsu ,  Hung-Yueh Chen ,  Yu-Ping Wang

IPC: H10N50/01 ,  H10N50/80 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/01 ,  H10N50/80 ,  H10B61/00 ,  H10N50/85

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is adjacent to the top electrode and the MTJ and on the second IMD layer and a top surface of the cap layer is higher than a top surface of the first IMD layer.