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    Manufacturing method of patterned structure of semiconductor
    66.
    发明授权
    Manufacturing method of patterned structure of semiconductor 有权

    公开(公告)号：US10090398B2

    公开(公告)日：2018-10-02

    申请号：US15648439

    申请日：2017-07-12

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Rai-Min Huang ,  I-Ming Tseng ,  Tong-Jyun Huang ,  Kuan-Hsien Li

    IPC: H01L29/66 ,  H01L29/40 ,  H01L21/308 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

    Abstract: A method of fabricating a patterned structure of a semiconductor device includes the following steps: providing a substrate having a target layer thereon; forming a patterned sacrificial layer on the target layer, wherein the patterned sacrificial layer consists of a plurality of sacrificial features; forming spacers respectively on sidewalls of each of the sacrificial features, wherein all of the spacers are arranged to have a layout pattern; and transferring the layout pattern to the target layer so as to form a first feature and a second feature, wherein the first feature comprises a vertical segment and a horizontal segment, the second feature comprises a vertical segment and a horizontal segment, and a distance between the vertical segment of the first feature and the vertical segment of the second feature is less than a minimum feature size generated by an exposure apparatus.

    FIN STRUCTURE AND FIN STRUCTURE CUTTING PROCESS
    69.
    发明申请
    FIN STRUCTURE AND FIN STRUCTURE CUTTING PROCESS 有权
    FIN结构和熔体结构切割工艺

    公开(公告)号：US20160293491A1

    公开(公告)日：2016-10-06

    申请号：US14696494

    申请日：2015-04-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L21/308 ,  H01L21/02

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 四个翅片结构形成在基板中，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

    Method for forming a semiconductor structure
    70.
    发明授权
    Method for forming a semiconductor structure 有权
    半导体结构的形成方法

    公开(公告)号：US09147612B2

    公开(公告)日：2015-09-29

    申请号：US14088445

    申请日：2013-11-25

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Po-Cheng Huang ,  I-Ming Tseng ,  Yu-Ting Li ,  Chun-Hsiung Wang ,  Wu-Sian Sie ,  Yi-Liang Liu ,  Chia-Lin Hsu ,  Po-Chao Tsao ,  Chien-Ting Lin ,  Shih-Fang Tzou

    IPC: H01L21/338 ,  H01L21/8234 ,  H01L21/265

    CPC classification number: H01L21/823431 ,  H01L21/265 ,  H01L21/3086 ,  H01L29/6681

    Abstract: The present invention provides a manufacturing method for forming a semiconductor structure, in which first, a substrate is provided, a hard mask is disposed on the substrate, the hard mask is then patterned to form a plurality of fin hard masks and a plurality of dummy fin hard masks, afterwards, a pattern transferring process is performed, to transfer the patterns of the fin hard masks and the fin hard masks into the substrate, so as to form a plurality of fin groups and a plurality of dummy fins. Each dummy fin is disposed on the end side of one fin group, and a fin cut process is performed, to remove each dummy fin.

    Abstract translation: 本发明提供一种用于形成半导体结构的制造方法，其中首先设置基板，在基板上设置硬掩模，然后将硬掩模图案化以形成多个散热片硬掩模和多个虚拟 翅片硬掩模，然后进行图案转印处理，将翅片硬掩模和翅片硬掩模的图案转移到基板中，以形成多个翅片组和多个虚拟翅片。 每个假翅片设置在一个翅片组的端侧，并进行翅片切割处理，以去除每个假翅片。

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