摘要:
An intraocular lens insertion tool is presented. An introductory part in an insertion cylinder is provided, at a widthwise central portion of a bottom surface, with a central protrusion which extends in an axial direction of a tool body and protrudes toward an upper surface to get in contact with a center portion of a rear surface of an optical zone of an intraocular lens. The upper surface is provided, at its both widthwise ends, with a pair of lateral protrusions, which extend in the axial direction of the tool body and protrude toward the bottom surface to get in contact with both ends of a front surface of the optical zone of the intraocular lens. A lens pressing face of a plunging member is formed with a dimension spanning from the bottom surface to the upper surface at a tip end section of the insertion cylinder.
摘要:
A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要:
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要:
An impurity removing apparatus is simple in structure for removing impurities from a rare gas and enable to make the rare gas reusable. The impurity removing apparatus includes a first treatment device 21 for removing fluorine and fluorine compound which are mixed with a rare gas discharged from an excimer laser oscillation apparatus 10, a second treatment device 23 for removing oxygen generated by the first treatment device, and a circulation device 25 for circulating the rare gas discharged from the excimer laser oscillation apparatus 10 and returning the rare gas to the excimer laser oscillation apparatus 10.
摘要:
A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要:
A behavior control apparatus includes an external condition acquiring unit configured to acquire an external condition of a mobile robot; a goal generating unit configured to generate a goal to be achieved by executing a plan for multiple functions of the mobile robot, based on the external condition; a goal class generating unit configured to generate a goal class indicating whether the goal is a general goal to be achieved in the order of generation of the goal or a conditional goal to be achieved by an interruption as satisfying a preset executing condition; an executing order determining unit configured to determine an executing order of the plan based on the goal class; and a plan generating unit configured to generate the plan for achieving a goal sequence of the order of execution.
摘要:
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0
摘要:
A package comprising a bag body and a suspending member having a tag and a suspending line, the bag body being formed of a packing material to a given shape, the tag being fixed to the outer surface of the bag body and the suspending line having one end fixed to the tag, a middle portion wound on the tag and the other end fixed to the outer surface. Preferably, the tag has a notch part tapered off, and the middle portion of the line is wound on the notch part of the tag. The package has a suspending line with a sufficient length while it has good external appearance.
摘要:
The use of isoquinolinone derivatives as an antiarteriosclerosis agent and antihyperlipoproteinemics. The derivatives are of the formula ##STR1## wherein R.sub.1 is hydrogen or a C.sub.1 -C.sub.6 alkyl group and R.sub.2 is a C.sub.1 -C.sub.6 alkyl group or the pharmaceutically acceptable salt thereof.
摘要:
An automobile fan controller comprises: a fluctuation signal generator for generating a fluctuation signal; a pulse-width-modulation circuit including a triangle generator for generating a triangle-waveform signal having a constant amplitude and a constant period, and a comparator connected to the fluctuation signal generator and the triangle generator, for comparing the fluctuation signal with the triangle-waveform signal, thereby producing a pulse signal having a pulse width variable dependent on the fluctuation signal; and a driver circuit, including a switching power transistor connected to the pulse-width-modulation circuit, a fan motor mounted on an automobile, and an air flow switching unit mounted on the automobile for energizing and de-energizing said fan motor with a variable pulse width in response to the pulse signal. In this fan controller air flow delivered from an automobile fan driven by the fan motor can fluctuate at a fluctuation amplitude in response to an air flow range set by an automobile driver by connecting the automobile fan controller to the fan motor.