公开(公告)号：US20060113543A1

公开(公告)日：2006-06-01

申请号：US11298378

申请日：2005-12-08

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US06645826B2

公开(公告)日：2003-11-11

申请号：US10093313

申请日：2002-03-07

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2126

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US07365750B2

公开(公告)日：2008-04-29

申请号：US11426138

申请日：2006-06-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

IPC分类号： G06K9/00

CPC分类号： G06K9/0004 ,  G07C9/00158 ,  H04M1/673 ,  H04M1/72519

摘要： It is an object to provide an user identity authentication system and an user identity authentication method with the Internet and a mobile information communication device. The mobile information communication device includes a liquid crystal device with a built-in image sensor. The image sensor reads individual information of a user, and user's identity is authenticated based on the individual information. A result of the authentication is unicast via the Internet. Alternatively, it is judged whether or not the result of the authentication is required to be unicast in accordance with a degree of requirement preset in the mobile information communication device or a destination terminal of communication, and the result is unicast via the Internet only when needed.

摘要翻译： 本发明的目的是提供一种用户身份认证系统和用户身份认证方法与因特网和移动信息通信设备。 移动信息通信装置包括具有内置图像传感器的液晶装置。 图像传感器读取用户的个人信息，并且基于个人信息认证用户的身份。 认证的结果是通过互联网进行单播。 或者，根据在移动信息通信装置或通信目的地终端中预先设定的要求，判定认证结果是否需要单播，并且结果仅在需要时通过因特网单播 。

公开(公告)号：US20050130391A1

公开(公告)日：2005-06-16

申请号：US11007308

申请日：2004-12-09

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  G03C1/805 ,  H01L21/30 ,  H01L21/46 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

摘要翻译： 提供了一种以高产率分离层压体而不损坏层压体的方法。 此外，提供了总体薄的制造轻量，柔性半导体器件的方法。 半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得 分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

公开(公告)号：US08896049B2

公开(公告)日：2014-11-25

申请号：US12751300

申请日：2010-03-31

申请人： Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

发明人： Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

IPC分类号： H01L29/788 ,  H01L27/115 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76

CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

公开(公告)号：US08659014B2

公开(公告)日：2014-02-25

申请号：US13174980

申请日：2011-07-01

申请人： Tatsuya Honda ,  Yasuyuki Arai

发明人： Tatsuya Honda ,  Yasuyuki Arai

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/3244 ,  H01L29/7869 ,  Y10T428/12917

摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。 一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

公开(公告)号：US08633488B2

公开(公告)日：2014-01-21

申请号：US13325129

申请日：2011-12-14

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  G02F1/136

CPC分类号： H01L27/124 ,  G02F1/133553 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02686 ,  H01L21/3003 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L27/3279 ,  H01L29/66537 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/78696

摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together; and a pixel electrode connected to the semiconductor layer.

摘要翻译： 具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布​​线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。 该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线 连接到第二绝缘层上的栅电极，用于将源极配线和半导体层连接在一起的连接电极; 以及连接到半导体层的像素电极。

公开(公告)号：US08624248B2

公开(公告)日：2014-01-07

申请号：US13169224

申请日：2011-06-27

申请人： Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

发明人： Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

摘要翻译： 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。

公开(公告)号：US08599469B2

公开(公告)日：2013-12-03

申请号：US13153546

申请日：2011-06-06

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167 ,  G02B26/026 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/1672 ,  G02F2001/1676 ,  G02F2001/1678 ,  G02F2201/123 ,  G09F9/372 ,  G09G3/344 ,  H01L51/0097 ,  H01L51/0545

摘要： A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

公开(公告)号：US08575604B2

公开(公告)日：2013-11-05

申请号：US13293260

申请日：2011-11-10

申请人： Yasuyuki Arai

发明人： Yasuyuki Arai

IPC分类号： H01L27/105 ,  H01L21/16

CPC分类号： H01L27/1156 ,  G11C11/403 ,  G11C16/0433 ,  H01L27/1225

摘要： An object is to provide a semiconductor memory device which can be miniaturized and also secures a sufficient margin for the refresh period. A memory cell includes a reading transistor, a writing transistor, and a capacitor. In the above structure, the capacitor controls a potential applied to a gate of the reading transistor. The writing transistor controls writing and erasing of data and, when the transistor is off, has small current so that loss of electric charges stored in the capacitor, which is due to leakage current of the writing transistor, can be prevented. A semiconductor layer included in the writing transistor is provided so as to extend from the gate electrode toward a source region of the reading transistor. The capacitor is provided to overlap with the gate electrode of the reading transistor.

摘要翻译： 本发明的目的是提供一种半导体存储器件，其可以被小型化并且还保证了刷新周期的足够余量。 存储单元包括读取晶体管，写入晶体管和电容器。 在上述结构中，电容器控制施加到读取晶体管的栅极的电位。 写入晶体管控制数据的写入和擦除，并且当晶体管截止时，具有小的电流，从而可以防止由于写入晶体管的漏电流而导致存储在电容器中的电荷损失。 包括在写入晶体管中的半导体层被设置为从栅极延伸到读取晶体管的源极区域。 提供电容器以与读取晶体管的栅电极重叠。