摘要:
For an automatic defect inspection of an edge exposure area of a wafer, an optical unit supplies a light beam onto the edge portion of a wafer and a detection unit detects light reflected from the edge portion. The detection unit converts the detected light into an electrical signal to transmit the electrical signal to a processing unit. The processing unit analyzes the electrical signal to measure the reflectivity of the edge portion, compares the measured reflectivity with a reference reflectivity, and calculates the width of the edge exposure area. The processing unit compares the calculated width with a reference width to detect any defect in the edge exposure area.
摘要:
The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要:
The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.
摘要:
In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.
摘要:
PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.
摘要:
An optical inspection tool used to detect surface defects of a substrate include a chuck for holding a substrate and a lens unit disposed over the chuck. The lens unit includes at least a pair of oblique beam paths therein, wherein light penetrating the beam paths travels without angular deflection. The beam paths take the form of spaces formed through the lens unit, or flat portions formed on a lens within the lens unit. A camera is installed on the lens unit, and the camera converts light passing through the lens unit into an image. Methods of detecting surface defects of the substrate using the inspection tool are also provided.
摘要:
A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.
摘要:
Electron-beam generators have wide area and directional beam generation capability. The generators include anode and cathode electrodes, which are disposed in spaced-apart and opposing relationship relative to each other. A clustered carbon nanotube array is provided to support the wide area and directional beam generation. The clustered nanotube array extends between the anode and cathode electrodes. The nanotube array also has a wide area emission surface thereon, which extends opposite a primary surface of the anode electrode. The clustered nanotube array is configured so that nanotubes therein provide conductive channels for electrons, which pass from the cathode electrode to the anode electrode via the emission surface.
摘要:
A method for classifying defects of an object includes irradiating lights having different wavelengths onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different wavelengths to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要:
An apparatus for examining spectral characteristics of an object may include a chuck configured to support and releasably fix the object, wherein the chuck is larger than the object, a first light source assembly integral with the chuck and configured to illuminate a bottom surface of the object with light having a predetermined spectrum and intensity, and a transmission analysis unit for collecting and analyzing light transmitted through the object. The first light source assembly may include multiple and/or adjustable light sources. A second light source assembly may illuminate a top surface of the object, and a reflection analysis unit may collect resultant reflected light.